Abstract: Vapor deposition methods and related systems are provided for depositing layers comprising vanadium and oxygen. In some embodiments, the methods comprise contacting a substrate in a reaction space with alternating pulses of a vapor-phase vanadium precursor and a vapor-phase oxygen reactant. The reaction space may be purged, for example, with an inert gas, between reactant pulses. The methods may be used to fill a gap on a substrate surface. Reaction conditions, including deposition temperature and reactant pulse and purge times may be selected to achieve advantageous gap fill properties. In some embodiments, the substrate on which deposition takes place is maintained at a relatively low temperature, for example between about 50° C. and about 185° C.

Abstract: A connecting member of a universal connector includes a first insertion hole and a second insertion hole formed on from a first end surface toward a second end surface of the connecting member, and a third insertion hole and a fourth insertion hole formed on the second end surface toward the first end surface of the connecting member, whereby the insertion holes will not be affected by and damage other structures of the connecting member in the mechanical process, so as to achieve the enhancement of the convenience of processing.

Abstract: In one general aspect, an apparatus can include a semiconductor component, a substrate including a recess, and a conductive-bonding component. The conductive-bonding component is disposed between the semiconductor component and the substrate. The conductive-bonding component has a first thickness between a bottom of the recess and a bottom surface of the semiconductor component greater than a second thickness between the top of the substrate and the bottom surface of the semiconductor component.

Abstract: A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a gap filling process by means of a plasma-enhanced deposition process. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: The present invention relates to a method of preparing a nano-sized, iron-based catalyst, the method comprising: mixing a solution containing an iron salt with a surfactant to form a mixture; adding a basic salt solution comprising a salt of element selected from the group consisting of: alkali metals, alkaline earth metals, transition metals of groups 3 to 7 and 9 to 11 of the Periodic Table of Elements, lanthanides, and combinations of elements thereof, to the mixture to form a precipitate; and calcining said precipitate to form the iron-based catalyst, said iron-based catalyst at least partially comprising said element of said basic salt. The present invention also relates to a nano-sized, iron-based catalyst prepared by the above method and a process for the production of light olefins using the nano-sized, iron-based catalyst.

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Abstract: The present invention relates to a hybrid iron nanoparticle catalyst comprising: i) 1 to 50 wt. % nanoparticles comprising iron and at least one of a metal M selected from the group consisting of alkali metals, alkaline earth metals, transition metals of groups 3 to 7 and 9 to 11 of the Periodic Table of Elements, lanthanides and combinations of M thereof; and ii) 50 to 99 wt. % of an aluminosilicate or silicoaluminophosphate zeolite, based on the total weight of the catalyst, wherein said nanoparticle has a diameter of about 2 to 50 nm. The present invention also relates to a method of preparing the hybrid iron nanoparticle catalyst and a process for the production of light olefins using the hybrid iron nanoparticle catalyst.

Abstract: Provided is a block copolymer composition which contains a block copolymer having a specific molecular structure and has a molecular weight distribution within an appropriate range. A polymerizable composition containing a macromonomer (A) which has a group having a radical-reactive unsaturated double bond at one terminal of a poly(meth)acrylate segment, a vinyl monomer (B), and an organic iodine compound (C), or a polymerizable composition containing a macromonomer (A), a vinyl monomer (B), an azo-based radical polymerization initiator (E), and iodine is polymerized to obtain a block copolymer composition containing a block copolymer in which constitutional units of all blocks are derived from vinyl monomers and at least one block has a branched structure.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The method then comprises subjecting the gap filling fluid to a transformation treatment, thus forming a transformed material in the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: Disclosed are methods and systems for depositing layers comprising vanadium and oxygen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Abstract: A structural color coating based on Mie scattering of high-refractive index microspheres has the following components in parts by mass: 5 to 20 parts of nano microspheres having a highly uniform particle size and a theoretical refractive index greater than 1.7, 75 to 90 parts of dispersion liquid, 0.1 to 5 parts of a surfactant, and 1 to 5 parts of an adhesive. The structural color coating forms a local microcosmic ordered, macroscopic long-range disordered structural film by means of spraying coating, blade coating, brushing coating, roll coating or dip-coating; the matrix is glass, metal, textile, ceramic, plastic or paper; the surfactant is sodium dodecyl benzene sulfonate, cetyl sodium sulfate, stearic acid, or sodium stearate; the nano microsphere is at least one of ZnS, ZnO, CdS, Cu2O, CaS, CuS, Cu2S, TiO2, ZrO2 or CeO2; the particle size of the nano microspheres ranges from 200 to 500 nm.

Abstract: In one general aspect, an apparatus can include a semiconductor component, a substrate including a recess, and a conductive-bonding component. The conductive-bonding component is disposed between the semiconductor component and the substrate. The conductive-bonding component has a first thickness between a bottom of the recess and a bottom surface of the semiconductor component greater than a second thickness between the top of the substrate and the bottom surface of the semiconductor component.

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.