Abstract: Methods and computer program products for determining one or more settings of a camera apparatus are provided. The methods include obtaining one or more parameters of the camera apparatus and determining one or more settings of the camera apparatus using the one or more parameters and an image repository. The image repository may include images with image parameters associated with the images, which may be correlated with the one or more parameters of the camera apparatus, and the images may also have an associated rating attribute. One or more images may be identified for inclusion in a subset of images, based on an image's image parameters and/or based on an image's rating attribute. The camera settings of one image of the subset of images, corresponding to the settings used to create the one image, may be used to automatically adjust the one or more settings of the camera apparatus.

Abstract: Extremely fast dynamic control is allowed for hybrid PV/T (photovoltaic/thermal) distributed power production using concentrated solar power by manipulating the transmissive or reflective state of a capture element or mirror or lens that can pass highly concentrated solar light from one energy conversion device to another, such as a thermal collector and a photovoltaic receiver, such as a vertical multijunction cell array. This allows superior quality electrical backfeed into an electric utility, enhanced plant electrical production revenue, and responsiveness to a multitude of conditions to meet new stringent engineering requirements for distributed power plants. The mirror or lens can be physically articulated using fast changing of a spatial variable, or can be a fixed smart material that changes state. A mechanical jitter or variable state jitter can be applied to the capture element, including at utility electric grid line frequency.

Abstract: A voltage source generator includes a light-transmissive component and a plurality of vertical multi junction (VMJ) cells. The light-transmissive component includes an inner space. The VMJ cells are disposed within the inner space of the light-transmissive component to receive light and perform light-to-electricity conversion. The VMJ cells are connected in series. The voltage source generator can generate a kV-level voltage and meet small-sized and low-cost demands. A voltage source module includes at least two voltage source generators connected to at least one electrical connector.

Abstract: A testing apparatus for testing a circuit board is disclosed, which includes an upper plate, a lower plate, and an adaptor circuit board. A plurality of positioning units is received in the lower plate. Each positioning unit has a plurality of length-variable test probes secured therein. Each test probe has a shell and upper and lower probe ends at opposite ends of the shell. In test, the circuit board is put on the lower plate and the upper plate is lowered to push the circuit board and the lower plate toward the adaptor circuit board. The upper ends of the test probes engage with electrical connectors of the circuit board and the lower ends thereof engage with the adaptor circuit board whereby test of the circuit board can be automatically performed by the testing apparatus.

Abstract: A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region. A plurality of second P-type heavily doped areas is closer to the second N-type heavily doped areas than the first N-type heavily doped area and arranged in the P-type region. At least one third N-type heavily doped area is arranged in the P-type region and connected with a low-voltage terminal. Alternatively or in combination, the second N-type heavily doped areas and the second P-type heavily doped areas are respectively arranged in the P-type region and the N-type region.

Abstract: A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region. A plurality of second P-type heavily doped areas is closer to the second N-type heavily doped areas than the first N-type heavily doped area and arranged in the P-type region. At least one third N-type heavily doped area is arranged in the P-type region and connected with a low-voltage terminal. Alternatively or in combination, the second N-type heavily doped areas and the second P-type heavily doped areas are respectively arranged in the P-type region and the N-type region.

Abstract: A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region. A plurality of second P-type heavily doped areas is closer to the second N-type heavily doped areas than the first N-type heavily doped area and arranged in the P-type region. At least one third N-type heavily doped area is arranged in the P-type region and connected with a low-voltage terminal. Alternatively or in combination, the second N-type heavily doped areas and the second P-type heavily doped areas are respectively arranged in the P-type region and the N-type region.

Abstract: A low-cost ESD protection device for high-voltage open-drain pad is disclosed, which has a first high-voltage (HV) NMOSFET coupled to a high-voltage (HV) open drain pad, a ground pad, a HV block unit and an ESD clamp unit and a low-voltage (LV) bias unit coupled to the first HV NMOSFET, a low-voltage (LV) trigger, the ESD clamp unit and the ground pad. The LV trigger is coupled to the HV block unit. The HV block unit blocks a high voltage from the HV open drain pad diode during normal operation and generates a trigger signal to the LV trigger when an ESD event is applied to the HV open drain pad. Then, the LV trigger turns on the ESD clamp unit to discharge an ESD current and switches the LV bias unit to turn off the first HV NMOSFET.

Abstract: A self-service terminal includes a safety box, a main control module, an operating module, and a shielding member. The main control module includes a casing and a mounting frame mounted in the casing. The mounting frame is attached on the safety box. The casing includes a pair of side panels and a top panel connecting between the pair of side panels. The pair of side panels and the top panel is detachably attached to the mounting frame. The operating module is attached to a front side of the main control module. The shielding member is attached to the safety box and encloses the operating module.

Abstract: A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region. A plurality of second P-type heavily doped areas is closer to the second N-type heavily doped areas than the first N-type heavily doped area and arranged in the P-type region. At least one third N-type heavily doped area is arranged in the P-type region and connected with a low-voltage terminal. Alternatively or in combination, the second N-type heavily doped areas and the second P-type heavily doped areas are respectively arranged in the P-type region and the N-type region.

Abstract: The present invention provides a method for producing an R-T-B-M sintered magnet having an oxygen content of less than 0.07 wt. % from R-T-B-M raw materials. The composition of R-T-B-M includes R being at least one element selected from a rare earth metal including Sc and Y. The composition also includes T being at least one element selected from Fe and Co. B in the composition is defined as Boron. The composition further includes M being at least one element selected from Ti, Ni, Nb, Al, V, Mn, Sn, Ca, Mg, Pb, Sb, Zn, Si, Zr, Cr, Cu, Ga, Mo, W, and Ta. The present invention provides for a step of creating an inert gas environment in the steps of casting, milling, mixing, molding, heating, and aging to prevent the powder from reacting with the oxygen in anyone of the above mentioned steps.

Abstract: A solar cell includes a vertical multi-junction (VMJ) cell and a passivation layer. The VMJ cell includes a plurality of PN junction substrates spaced from each other and a plurality of electrode layers. Each of the PN junction substrates includes a P+ type end surface, a P type end surface, an N type end surface, and an N+ type end surface. Each of the electrode layers is disposed between and connected to two adjacent PN junction substrates and has an exposing surface. The passivation layer covers the P+ type end surfaces, the P type end surfaces, the N type end surfaces, the N+ type end surfaces and the exposing surfaces to reduce a carrier recombination probability induced by absorbing sunlight. A method of manufacturing the solar cell includes providing a vertical multi-junction (VMJ) cell and forming a passivation layer on the VMJ cell.

Abstract: A high voltage open-drain electrostatic discharge (ESD) protection device is disclosed, which comprises a high-voltage n-channel metal oxide semiconductor field effect transistor (HV NMOSFET) coupled to a high-voltage pad and a low-voltage terminal and receiving a high voltage on the high-voltage pad to operate in normal operation. The high-voltage pad and the HV NMOSFET are further coupled to a high-voltage ESD unit blocking the high voltage, and receiving a positive ESD voltage on the high-voltage pad to bypass an ESD current when an ESD event is applied to the high-voltage pad. The high-voltage ESD unit and the low-voltage terminal are coupled to a power clamp unit, which receives the positive ESD voltage via the high-voltage ESD unit to bypass the ESD current.

Abstract: A cooling plate in which flow channels are modified to reduce temperature differences between portions of the cooling plate and provide for more uniform heat distribution within a heat generator. The flow channels of the cooling plate are formed such that a central portion of the flow channels has a greater volume than the end portions near an inlet and an outlet so that the amount of cooling water that is contained in the central portion at any one time is larger than either of the end portions near the inlet and the outlet. Likelihood of thermal deformation of the cooling plate due to thermal stress is decreased, and stability of performance of the fuel cell is increased.

Abstract: A high voltage open-drain electrostatic discharge (ESD) protection device is disclosed, which comprises a high-voltage n-channel metal oxide semiconductor field effect transistor (HV NMOSFET) coupled to a high-voltage pad and a low-voltage terminal and receiving a high voltage on the high-voltage pad to operate in normal operation. The high-voltage pad and the HV NMOSFET are further coupled to a high-voltage ESD unit blocking the high voltage, and receiving a positive ESD voltage on the high-voltage pad to bypass an ESD current when an ESD event is applied to the high-voltage pad. The high-voltage ESD unit and the low-voltage terminal are coupled to a power clamp unit, which receives the positive ESD voltage via the high-voltage ESD unit to bypass the ESD current.

Abstract: A self-service terminal includes a first cabinet, a cover rotatably secured on the first cabinet, and an adjustment device received in the first cabinet. A card slot for inputting/outputting a cash card is defined in the cover, and a positioning member is attached to the user interface cover. The adjustment device includes a positioning tray and a mounting member slidably secured to the positioning tray. A reader is attached to the positioning tray and includes an interface. The mounting member includes a slanted side plate abutting the positioning tray; wherein the positioning member is engaged with the positioning tray, for aligning with the interface of the reader and the card slot of the cover.

Abstract: A repair apparatus for a circuit board assembly includes a cooling device for a surface of the circuit board assembly opposite to the surface to be repaired. The cooling device defines a chamber for receiving the circuit board assembly. The circuit board assembly is disposed within the chamber to define a heat exchange space between the circuit board assembly and the bottom of the chamber. A method for repairing a circuit board assembly is also provided.

Abstract: A cooling device for cooling electronic components includes a base plate, a power source, and a cooling module. The cooling module includes a cooling sheet and a thermal conductive base. The cooling sheet includes a hot surface and a cooling surface. The thermal conductive base is located above the cooling surface of the cooling sheet, and configured to support electronic components on a printed circuit board and transfer heat between the electronic components and the cooling surface. When the cooling sheet is powered on, the cooling surface is in a constant state of low temperature. Due to the heat transfer between the cooling surface and the thermal conductive base, heat from the electronic components can be transferred from the thermal conductive base to the cooling surface continuously.

Abstract: An automatic teller machine includes a chassis, a user interface module; and a pair of sliding mechanisms. The user interface module is rotatably attached to the chassis. The pair of sliding mechanisms are attached to the chassis and the user interface. Each sliding mechanism includes a first rail and a second rail. The first rail is rotatably secured to the chassis. A second blocking member is located on the first rail. The second rail is rotatably secured to the user interface module and slidable on the first rail. A latch member with a latch portion is rotatably located on the second rail. The user interface module is rotatable between a closed position, where the latch portion is located away from the second blocking member, and an open position, where the latch portion engages with the second blocking member.