Abstract: An optical interconnect system has first and second waveguides each with wedge-shaped cross-section at a first end, disposed over an optical modulator. The optical modulator is a surface-plasmon multi quantum well (SP-MQW) modulator, the first waveguide an input waveguide and the second waveguide configured an output waveguide. In embodiments the SP-MQW modulator has multiple semiconductor layers disposed atop a lower metal layer between 10 and 300 nanometers thick and configured such that incident light is reflected at the lower metal layer unless a voltage is applied to the semiconductor layers, when incident light is coupled into a surface plasmon mode in the lower metal layer.

Abstract: Some embodiments of the present disclosure provide a semiconductor-based photon-counting sensor comprising a metal-insulator-semiconductor internal photoemission (e.g., thermionic-emission) detector formed on and/or in a first surface of a semiconductor substrate, and at least one jot formed on and/or in a second side of a semiconductor substrate. The at least one MIS photoemission detector and the at least one jot are configured such that a photocarrier generated in response to a photon incident on the MIS thermionic-emission detector is readout by the at least one jot.

Abstract: In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 5×1018 cm?3 through the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 2×1019 cm?3.

Abstract: Bandwidth management includes receiving, by a branch device, a requested display identification data structure from a display device. The branch device modifies the requested display identification data structure based on a total bandwidth through a constricted port on the branch device to obtain a modified display identification data structure. The branch device transmits the modified display identification data structure to a source device.

Abstract: A transparent conductive oxide (TCO) material includes a metal-rich metal oxide having an average formula (M1, M2 . . . Mn)yOx, where M1, M2 and Mn are the same metal or different metals and a molar ratio of y:x is selected from a range of 0.1 to 20. A method of making a metal-rich metal oxide material includes co-depositing a metal and a stoichiometric metal oxide and annealing the deposited material above 100° C. In an embodiment, a thin-film solar cell, includes an electrode, a transparent conductive oxide (TCO) disposed on the electrode, a solar absorbing layer disposed on the TCO, and a metal-rich metal oxide disposed on the solar absorbing layer. A method of fabricating a thin-film solar cell is also disclosed.

Abstract: The present invention relates to the use of a novel class of cancer stem cell pathway (CSCP) inhibitors; to methods of using such compounds to treat refractory, recurrent, or metastatic cancers; to methods of selective killing cancer cells by using such compounds with specific administration regimen; to methods of targeting cancer stem cells by inhibiting Stat3 pathway; to methods of using novel compounds in the treatment of conditions or disorders in a mammal related to aberrant Stat3 pathway activity; and to processes for preparing such compounds and intermediates thereof, and to the pharmaceutical compositions of relevant compounds, and to the specific methods of administration of these compounds.

Abstract: The present invention relates to the use of a novel class of cancer stem cell pathway (CSCP) inhibitors; to methods of using such compounds to treat refractory, recurrent, or metastatic cancers; to methods of selective killing cancer cells by using such compounds with specific administration regimen; to methods of targeting cancer stem cells by inhibiting Stat3 pathway; to methods of using novel compounds in the treatment of conditions or disorders in a mammal related to aberrant Stat3 pathway activity; and to processes for preparing such compounds and intermediates thereof, and to the pharmaceutical composition of relevant compounds, and to the specific methods of administration of these compounds.

Abstract: In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

Abstract: A tubular heat-absorbing element partly enclosed in an insulating layer or jacket, has absorbing surface that is accessible to solar radiation. The thermal insulation is designed to provide entry to solar radiation by way of a cavity. The absorbing surface can be substantially planar.

Abstract: A method for forming single crystal or large-crystal-grain thin-film layers deposits a thin-film amorphous, nanocrystalline, microcrystalline, or polycrystalline layer, and laser-heats a seed spot having size on the order of a critical nucleation size of the thin-film layer. The single-crystal seed spot is extended into a single-crystal seed line by laser-heating one or more crystallization zones adjacent to the seed spot and drawing the zone across the thin-film layer. The single-crystal seed line is extended across the thin-film material layer into a single-crystal layer by laser-heating an adjacent linear crystallization zone and drawing the crystallization zone across the thin-film layer. Photovoltaic cells may be formed in or on the single-crystal layer. Tandem photovoltaic devices may be formed using one or several iterations of the method. The method may also be used to form single-crystal semiconductor thin-film transistors, such as for display devices, or to form single-crystal superconductor layers.

Abstract: Benchmarks for the price of a financial instrument such as FX spot rate for a currency pair are calculated by an algorithm based on a previous benchmark and a market price. The market price is derived from a deal price and a quote price. The deal price is based on deals conducted since the last benchmark and the quote price is based on bids and offers entered since the last benchmark. For each of the deal and quote prices, a price, weight and scatter is calculated which is used to calculate a benchmark price, weight and scatter and a benchmark error.

Abstract: A transparent conductive oxide (TCO) material includes a metal-rich metal oxide having an average formula (M1, M2 . . . Mn)yOx, where M1, M2 and Mn are the same metal or different metals and a molar ratio of y:x is selected from a range of 0.1 to 20. A method of making a metal-rich metal oxide material includes co-depositing a metal and a stoichiometric metal oxide and annealing the deposited material above 100° C. In an embodiment, a thin-film solar cell, includes an electrode, a transparent conductive oxide (TCO) disposed on the electrode, a solar absorbing layer disposed on the TCO, and a metal-rich metal oxide disposed on the solar absorbing layer. A method of fabricating a thin-film solar cell is also disclosed.

Abstract: Methods are discussed for producing single-crystal shapes on amorphous materials. A first method deposits a layer of Germanium-Tin (GeSn) alloy comprising between three and sixteen atomic-percent tin on material incapable of seeding crystal formation, the layer is photolithographically defined into a shape having a point having radius less than 100 nanometers; and the shape is annealed by heating to a temperature below 450 degrees Celsius. A second method also photolithographically defines a shape on a layer of GeSn, then uses a laser to heat and crystalize seed spot on the shape; and anneals the shape by heating and thereby crystalizing additional GeSn alloy of the shape. In embodiments, the crystalized GeSn serves to seed InGaP and/or InGaAs layers that may serve together with the GeSn as layers of a tandem photovoltaic cell.

Abstract: There is provided a substrate with a lower growth confinement layer disposed thereon. An upper growth confinement layer is disposed above and vertically separated from the lower growth confinement layer. A planar lateral growth channel is provided between the upper and lower growth confinement layers with a vertical separation between the layers along the lateral growth channel. A germanium material growth seed of amorphous silicon is disposed at a site adjacent to the lateral growth channel. The upper growth confinement layer and the lower growth confinement layer each prohibits crystalline germanium material nucleation on the upper and lower growth confinement layers during exposure to GeH4 gas, for crystalline germanium material growth initiation in the lateral growth channel only at the growth seed site. Crystalline germanium material fills the lateral growth channel. A growth channel outlet provides formed crystalline germanium material from the lateral growth channel.

Abstract: Electro-optic modulators are disclosed. An electro-optic modulator includes an optical ring resonator, an optical waveguide, and a cavity of electro-optic material. The waveguide has a first portion positioned adjacent the resonator to create a first coupling region and a second portion positioned adjacent the resonator to create a second coupling region. The cavity of electro-optic material is embedded within the waveguide between the first portion and the second portion. A method of optical modulation includes the steps of receiving light into an optical waveguide, coupling a portion of the light from the waveguide into an optical ring resonator at a first coupling region between the waveguide and the resonator, transmitting the light remaining in the waveguide into a cavity of electro-optic material embedded within the waveguide, and transmitting the light from the cavity to a second coupling region between the waveguide and the resonator.

Abstract: Solution-processed Ni nanochain-SiOx (x<2) and Ni nanochain-SiO2 selective solar thermal absorbers that exhibit a strong anti-oxidation behavior up to 600° C. in air. The thermal stability is far superior to Ni nanoparticle-Al2O3 selective solar thermal absorbers. The SiOx (x<2) and SiO2 matrices are derived from hydrogen silsesquioxane (HSQ) and tetraethyl orthosilicate (TEOS) precursors, respectively. We find that both the excess Si and the stoichiometric SiO2 matrix contribute to antioxidation behavior. Methods of making the selective solar thermal absorbers are described.

Abstract: In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

Abstract: A method, a server and a system for vehicle diagnosis are provided. The method for vehicle diagnosis comprises: a diagnosis server remotely receiving a fault code sent by a vehicle-side terminal and recording a sending device identifier; analyzing the received fault code to obtain a fault diagnosis result; pushing the fault diagnosis result to a corresponding vehicle owner according to the sending device identifier. By adopting the above technical solution, the vehicle owner can know fault situation of the vehicle in time without moving the vehicle to a certain maintenance site, and further decide whether to make a repair or maintenance according to the obtained fault situation, which not only reduces the unnecessary time waste but also effectively reduces security hidden trouble and reduces accident occurrence probability.

Abstract: Benchmarks for the price of a financial instrument such as FX spot rate for a currency pair are calculated by an algorithm based on a previous benchmark and a market price. The market price is derived from a deal price and a quote price. The deal price is based on deals conducted since the last benchmark and the quote price is based on bids and offers entered since the last benchmark. For each of the deal and quote prices, a price, weight and scatter is calculated which is used to calculate a benchmark price, weight and scatter and a benchmark error.

Abstract: A method for forming single crystal or large-crystal-grain thin-film layers deposits a thin-film amorphous, nanocrystalline, microcrystalline, or polycrystalline layer, and laser-heats a seed spot having size on the order of a critical nucleation size of the thin-film layer. The single-crystal seed spot is extended into a single-crystal seed line by laser-heating one or more crystallization zones adjacent to the seed spot and drawing the zone across the thin-film layer. The single-crystal seed line is extended across the thin-film material layer into a single-crystal layer by laser-heating an adjacent linear crystallization zone and drawing the crystallization zone across the thin-film layer. Photovoltaic cells may be formed in or on the single-crystal layer. Tandem photovoltaic devices may be formed using one or several iterations of the method. The method may also be used to form single-crystal semiconductor thin-film transistors, such as for display devices, or to form single-crystal superconductor layers.