Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

Abstract: A method of fabricating a nanowire memory device, and a system of controlling nanowire formation used in the same method are provided. In the method of fabricating a nanowire memory device which includes a substrate; an electrode formed on the substrate and insulated from the substrate; and a nanowire having its one end connected with the electrode and formed at a given length, the method comprises: forming an electrode and a dummy electrode to be paired with the electrode on the substrate; forming the nanowire between the electrode and the dummy electrode while measuring a current flowing between the electrode and the dummy electrode, and cutting power applied between the electrode and the dummy electrode when the current measured is a given value; and removing the dummy electrode.

Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

Abstract: A nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same are provided. The nonvolatile memory device may include a substrate, at least one first electrode on the substrate, first and second vertical walls on the at least one first electrode spaced from each other, a multiwall carbon nanotube on the at least one first electrode between the first and second vertical walls, second and third electrodes on the first and second vertical walls respectively and at least one fourth electrode spaced a variable distance D (where D?0) from the multiwall carbon nanotubes.

Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

Abstract: Provided are a nonvolatile memory device and methods of fabricating and operating the same. The memory device may include a substrate, at least a first and a second electrode on the substrate to be spaced a distance from each other, a conductive nanotube between the first and second electrodes and selectively coming into contact with the first electrode or the second electrode due to an electrostatic force and a support supporting the conductive nanotube. The memory device may be an erasable nonvolatile memory device which may retain information even when no power is supplied and may ensure relatively high operating speed and relatively high integration density. Because the memory device writes and erases information in units of bits, the memory device may be applied to a large number of fields.

Abstract: A head slider for a hard disk drive is disclosed. The slider includes an operation device associated with a read/write head and adapted to change the flying height between the read/write head and a disk in relation to temperature. The operation device may be formed from a material that expands and contracts in relation to temperature in order to change the flying height, or a material that undergoes bending deformation in relation to temperature in order to change the flying height.

Abstract: A suspension assembly of an actuator of a hard disk drive prevents collisions with a data storage disk of the drive. The suspension assembly includes a load beam, a bracket having a rear end at which the bracket is coupled to the load beam and a flexure, a slider that is attached to the bracket and carries the read/write head of the hard disk drive, and a limiting mechanism capable of selectively attaching and detaching a respective portion of the bracket to and from the load beam during operation. The load beam has a dimple projecting toward the bracket and which normally contacts a first surface of the bracket. The slider is attached to a second surface of the bracket opposite the first surface. The limiting mechanism attaches a portion of the bracket bearing the slider to the load beam when the read/write head is unloaded from the disk. Therefore, the wobbling of the slider is suppressed during the unloading operation.

Abstract: A probe for a data storage apparatus. The probe includes a coating layer formed on a tip of the probe, wherein a peak of the tip is exposed and the coating layer and the peak form a predetermined contact area with respect to a recording medium. In addition, the probe may also include an insulating layer formed between the coating layer and the tip of the probe. The coating layer, the insulating layer, and the peak of the tip have a predetermined contact area with respect to the recording medium. Consequently, the probe can obtain high resolving ability by using a sharp-type tip and simultaneously can reduce the degree of abrasion of the peak of the tip, thereby resulting in an excellent durability.

Abstract: A slider of a hard disk drive can include a slider main body on which a read/write head is mounted, the read/write head configured to write data to a disk and to read data from the disk by being lifted a predetermined height from a surface of the disk by a lift force when the disk is rotating, and a lift force generation unit provided in an area of the slider main body proximate to the read/write head to improve the lift force of the slider main body with respect to the disk.

Abstract: Provided is a spindle motor for a disk drive including a base, a sleeve fixed on the base and having a space portion therein, and a shaft rotatably installed in the space portion of the sleeve and having a shape such that a diameter of the shaft decreases from a middle portion of the shaft in a lengthwise direction to both ends thereof.

Abstract: An information storage device includes a ferroelectric layer having a first surface and a second surface opposite the first surface. A common electrode layer is formed on the first surface of the ferroelectric layer. At least two conductive track layers separated from each other are positioned on the second surface of the ferroelectric layer. A conductive roller that has two opposite ends supported by the conductive track layers is provided. The conductive roller is movable along a conductive track. A ferromagnetic layer creates a magnetic field on the conductive roller.

Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

Abstract: A method of fabricating a nanowire memory device, and a system of controlling nanowire formation used in the same method are provided. In the method of fabricating a nanowire memory device which includes a substrate; an electrode formed on the substrate and insulated from the substrate; and a nanowire having its one end connected with the electrode and formed at a given length, the method comprises: forming an electrode and a dummy electrode to be paired with the electrode on the substrate; forming the nanowire between the electrode and the dummy electrode while measuring a current flowing between the electrode and the dummy electrode, and cutting power applied between the electrode and the dummy electrode when the current measured is a given value; and removing the dummy electrode.

Abstract: An apparatus is provided for gripping nano-scale objects, wherein the apparatus includes a probe including a base portion and a terminal portion. First and second nanotubes are secured to the base portion of the probe, wherein each of the first and second nanotubes include a protruding portion which extends past the base portion and the terminal portion of the probe. First and second electrodes are formed on the base portion of the probe and electrically connected to the first and second nanotubes. A third electrode is disposed on the terminal portion of the probe. A control circuit applies a voltage to the first, second and third electrodes to close the protruding portions of the first and second nanotubes by charging the first and second nanotubes to a first polarity and charging the third electrode to a second polarity opposite to the first polarity.

Abstract: A nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same are provided. The nonvolatile memory device may include a substrate, at least one first electrode on the substrate, first and second vertical walls on the at least one first electrode spaced from each other, a multiwall carbon nanotube on the at least one first electrode between the first and second vertical walls, second and third electrodes on the first and second vertical walls respectively and at least one fourth electrode spaced a variable distance D (where D?0) from the multiwall carbon nanotubes.

Abstract: A head slider for a hard disk drive is disclosed. The slider includes an operation device associated with a read/write head and adapted to change the flying height between the read/write head and a disk in relation to temperature. The operation device may be formed from a material that expands and contracts in relation to temperature in order to change the flying height, or a material that undergoes bending deformation in relation to temperature in order to change the flying height.

Abstract: A suspension assembly of an actuator of a hard disk drive prevents collisions with a data storage disk of the drive. The suspension assembly includes a load beam, a bracket having a rear end at which the bracket is coupled to the load beam and a flexure, a slider that is attached to the bracket and carries the read/write head of the hard disk drive, and a limiting mechanism capable of selectively attaching and detaching a respective portion of the bracket to and from the load beam during operation. The load beam has a dimple projecting toward the bracket and which normally contacts a first surface of the bracket. The slider is attached to a second surface of the bracket opposite the first surface. The limiting mechanism attaches a portion of the bracket bearing the slider to the load beam when the read/write head is unloaded from the disk. Therefore, the wobbling of the slider is suppressed during the unloading operation.