Abstract: A display apparatus includes a display device and an encapsulation layer covering the display device. The encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and a hybrid encapsulation layer positioned between the first inorganic encapsulation layer and the second inorganic encapsulation layer. The hybrid encapsulation layer includes at least one of alucone, zircone, zincone, titanicone, and nickelcone.

Abstract: A stacked semiconductor device includes a plurality of semiconductor dies stacked in a vertical direction, first and second signal paths, a transmission unit and a reception unit. The first and second signal paths electrically connect the plurality of semiconductor dies, where each of the first signal path and the second signal path includes at least one through-substrate via. The transmission unit generates a first driving signal and a second driving signal in synchronization with transitioning timing of a transmission signal to output the first driving signal to the first signal path and output the second driving signal to the second signal path. The reception unit receives a first attenuated signal corresponding to the first driving signal from the first signal path and receives a second attenuated signal corresponding to the second driving signal from the second signal path to generate a reception signal corresponding to the transmission signal.

Abstract: An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.

Abstract: A display apparatus includes a display device and an encapsulation layer covering the display device. The encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and a hybrid encapsulation layer positioned between the first inorganic encapsulation layer and the second inorganic encapsulation layer. The hybrid encapsulation layer includes at least one of alucone, zircone, zincone, titanicone, and nickelcone.

Abstract: Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)˜2.6 at %.

Abstract: A photocurable composition includes (A) a photocurable monomer and (B) a silicon-containing monomer or oligomer thereof, the silicon-containing monomer being represented by Formula 1

Abstract: A stacked semiconductor device includes a plurality of semiconductor dies stacked in a vertical direction, first and second signal paths, a transmission unit and a reception unit. The first and second signal paths electrically connect the plurality of semiconductor dies, where each of the first signal path and the second signal path includes at least one through-substrate via. The transmission unit generates a first driving signal and a second driving signal in synchronization with transitioning timing of a transmission signal to output the first driving signal to the first signal path and output the second driving signal to the second signal path. The reception unit receives a first attenuated signal corresponding to the first driving signal from the first signal path and receives a second attenuated signal corresponding to the second driving signal from the second signal path to generate a reception signal corresponding to the transmission signal.

Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, an active pattern disposed on the substrate and including a nitride, a protective pattern disposed on the active pattern and including a non-nitride, a gate electrode overlapping with the active pattern, and a gate insulating layer between the gate electrode and the active pattern.

Abstract: The present invention is related to hydrophilic silicone powders and the methods to prepare the same that contain 1-30 mol % of units selected from a group consisting of (a) partially hydrolyzed silsesquioxane containing one hydroxyl group (T2) and silica (Q3), (b) partially hydrolyzed silsesquioxane containing two hydroxyl groups (T1) and silica (Q3), (c) silica containing three hydroxyl groups (Q1), hydrolyzed silicone containing siloxane (D1), and mixtures thereof, and hydrophilic silicone powders consisting of core described above and shells composed of silica, and/or titanium dioxide. The particles are useful as ingredients for cosmetics and emulsions because they have good heat resistance, good touching feeling, and readily disperse in water due to their hydrophilic nature and high water absorbency.

Abstract: A metal-oxide sintered body for a temperature sensor that can be installed in a combustion engine and components connected to the engine in order to sense temperature uses metal oxide. The metal-oxide sintered body has particles with large resistance values and particles with small resistance values mixed therein. The particles with the small resistance values may serve as a main resistance component in the temperature range of 0° C. to 500° C., and the particles with the large resistance values may contribute to the total resistance in proportion to the mixing ratio in the temperature range of 500° C. to 900° C. Thus, the metal-oxide sintered body enables a single sensor to measure all resistances, and can be used in an exhaust device or the like of a motor vehicle that requires temperature measurement over a wide range of temperatures.

Abstract: A composite material for a temperature sensor and a method of manufacturing the temperature sensor using the composite material are provided. The composite material contains four or more kinds of metal oxides combined with highly insulating materials to produce a material with semiconductor-like properties to more accurately measure a temperature at high temperatures in the range of 500° C. and above. The sensor includes electrode wires having a predetermined diameter inserted into the metal oxide of the temperature sensor when the metal oxide is press-molded to form the temperature sensor. Through the connection of the electrode wires to the temperature sensor device, disconnection of the electrode wires from the device even at a high temperature.

Abstract: An optical member includes an anisotropic conductive film that has a multilayer structure having a bonding layer containing an epoxy resin as a curing part and a bonding layer containing a (meth)acrylate resin as a curing part.

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, wherein the anisotropic conductive film has an electrical conductivity of more than 0 ?S/cm to about 100 ?S/cm.

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT.

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, the anisotropic conductive film has a halogen ion content of more than 0 ppm to about 100 ppm.

Abstract: Disclosed herein is a composition of a sensor element, a temperature sensor having the composition of the sensor element and a method of manufacturing the temperature sensor. The sensor element composition comprising Y2O3, Al2O3, MnO2, NiO and Fe2O3, and further comprising ZrO2 and a temperature sensor comprising the same. The method comprising: weighing the composition for a sensor element; mixing the composition; calcining the mixture at about 1000° C.˜1400° C. for 30 min˜5 hrs; pulverizing the calcined mixture to obtain powder; disposing the powder type mixture into a mold; inserting in parallel a plurality of lead wires into the powder type mixture; pressure molding the powder type mixture; and sintering the pressure molded material at about 1300° C.˜1500° C. for 30 min˜5 hrs.

Abstract: A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm3 to have stable electrical property.

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT.

Abstract: An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.

Abstract: An apparatus includes a first member including a plurality of first electrodes on a first substrate, a second member including a plurality of second electrodes on a second substrate, the second electrodes facing the first electrodes of the first member, and an anisotropic conductive film (ACF) between the first member and the second member, the ACF having a double-layered structure and electrically connecting the first member and the second member, the ACF including an epoxy resin with a polycyclic aromatic ring and exhibiting a minimum melt viscosity of about 3,000 Pa·s to about 10,000 Pa·s at about 30° C. to about 200° C.