Patents by Inventor Ji-Suk Kim

Ji-Suk Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240191027
    Abstract: The specification relates an ionomer comprising a compound derived from N,N-diallylamine and a method for preparing the same. The ionomer according to one embodiment of the disclosure has an effect of providing excellent battery performance by controlling the ion exchange capability in a wide range while having excellent alkaline durability.
    Type: Application
    Filed: November 3, 2023
    Publication date: June 13, 2024
    Inventors: Albert LEE, Seung Sang Hwang, Seon Joon Kim, Taegon Oh, Ji Yoon Jung, Young Sang Park, Dong-Yeop Yoo, Jin Suk Ku, Junggyu Kim
  • Publication number: 20240194372
    Abstract: The present invention relates to an insulating gas used for electrical insulation or arc extinguishing of an electrical device, and an electrical device for insulating electricity using the same. The insulating gas of the present invention, which may replace SF6 gas, consists of a mixed gas of trifluoromethyl trifluorovinyl ether (CF3OCFCF2) and a carrier gas. The insulating gas of the present invention has the characteristics of a low boiling point, high dielectric strength, low toxicity, and a low global warming potential (GWP=1 or less), and thus may replace SF6, and the low global warming potential with no loss of high insulating capacity and arc extinguishing capability may reduce greenhouse gases.
    Type: Application
    Filed: October 25, 2021
    Publication date: June 13, 2024
    Applicants: KOREA ELECTRO TECHNOLOGY RESEARCH INSTITUTE, KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Ki Dong SONG, Yeon Ho OH, Hyun Jae JANG, In Joon PARK, Won Wook SO, Shin Hong YOOK, Sang Goo LEE, Hong suk KANG, Ju Hyeon KIM, Ji Hoon BAIK, Eun Ho SOHN, Myoung Sook LEE, Bong Jun CHANG
  • Patent number: 12000754
    Abstract: The present invention provides a load generating unit for testing an actuator, the unit including a first permanent magnet and a second permanent magnet spaced apart from each other; a third permanent magnet or a ferromagnetic body arranged in a row with the first permanent magnet and the second permanent magnet between the first permanent magnet and the second permanent magnet; and a first link passing through central axes of the first permanent magnet and the second permanent magnet to be penetrated to a central axis of the third permanent magnet and be connected to the actuator, wherein the third permanent magnet and the link are displaced in a length direction of the first link by a magnetic force. According to the present invention, the complexity, cost, and inertia of a device may be overcome and a load profile may be easily generated.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: June 4, 2024
    Assignee: AGENCY FOR DEFENSE DEVELOPMENT
    Inventors: Seung-Chul Han, Ji-Suk Kim, Ha-Jun Lee, Dae-Gyeom Kang
  • Publication number: 20240174890
    Abstract: A CMP slurry composition for polishing tungsten and a method of polishing tungsten using the same, the composition includes a polar solvent or a nonpolar solvent; an abrasive agent; and a compound represented by Formula 3 or a complex thereof:
    Type: Application
    Filed: October 24, 2023
    Publication date: May 30, 2024
    Inventors: Keun Sam JANG, Won Jung KIM, Tae Won PARK, Ji Ho LEE, Eui Rang LEE, Jin Gyo KIM, Dong Hyeon LEE, Chang Suk LEE
  • Publication number: 20240166355
    Abstract: An environmental control device includes a shaft installed in an aircraft and coupled to a motor to be rotatable; a compressor connected to the shaft to be rotatable, the compressor adiabatically compressing external air introduced into the aircraft to form a flow of compressed air having a raised temperature; a heat exchanger allowing heat exchange between the compressed air having a raised temperature and a portion of the external air introduced into the aircraft; and a turbine connected to the shaft to be rotatable, the turbine adiabatically expanding the heat-exchanged compressed air to form a flow of chilling air.
    Type: Application
    Filed: May 15, 2023
    Publication date: May 23, 2024
    Inventors: Gwi Taek Kim, Ji Won Hwang, Mi Jin Kim, Woo Suk Jung
  • Publication number: 20240158822
    Abstract: Disclosed herein are a microorganism with excellent deacetoxycephalosporin C (DAOC) productivity and a use thereof. A mutant microorganism with improved DAOC productivity and a use thereof for producing 7-aminodeacetoxycephalosporanic acid (7-ADCA) are provided.
    Type: Application
    Filed: October 17, 2023
    Publication date: May 16, 2024
    Inventors: Zhe PIAO, Young sung YUN, Hyeon Seo LEE, Yeon Hee CHOI, Mi Suk KANG, Xue Mei PIAO, You Mi KIM, Ji Su LEE, Hong Xian LI, Dong Il SEO, Dong Won JEONG, Seung Ki KIM
  • Publication number: 20240153792
    Abstract: An apparatus and method for processing a substrate can reduce the concentration of process by-products in a chemical solution.
    Type: Application
    Filed: November 7, 2023
    Publication date: May 9, 2024
    Applicants: SEMES CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min Jung KIM, Jin Ah HAN, Hee Hwan KIM, Yong Hoon HONG, Kyoung Suk KIM, Jong Hyeok PARK, Jin Hyung PARK, Dae Hyuk CHUNG, Ji Hoon CHA
  • Publication number: 20240152724
    Abstract: The present invention provides a scalable digital twin system structure and a scalable digital twin service method that are capable of, based on a digital twin, performing real-time control of the real world while providing information required for the user to determine the optimal countermeasure in solve real-world problems in stages, thereby helping rapidly solve problems of the real-world. In order to preemptively respond to the real-world problems by providing decision support information with improved reliability according to a timeline based on a digital twin of a scalable structure, the operation of the digital twin is divided into several stages according to complexity and a result of each stage is transferred to an application service and the next stage, so that as the stage becomes higher, a more reliable result can be provided.
    Type: Application
    Filed: November 7, 2022
    Publication date: May 9, 2024
    Inventors: Mi Suk LEE, Woo-Sug JUNG, Ji Eun KIM, Hyunjin KIM, Ki-Sook CHUNG
  • Publication number: 20240121945
    Abstract: A semiconductor memory device comprises a substrate including a first source/drain region and a second source/drain region, a trench between the first source/drain region and the second source/drain region and formed in the substrate, a cell gate insulating layer on sidewalls and a bottom surface of the trench, a cell gate electrode on the cell gate insulating layer, a work function control pattern on the cell gate electrode, including N-type impurities and a cell gate capping pattern on the work function control pattern. The work function control pattern includes a semiconductor material. The work function control pattern includes a first region and a second region between the first region and the cell gate electrode. A concentration of the N-type impurities in the first region is greater than a concentration of the N-type impurities in the second region.
    Type: Application
    Filed: July 6, 2023
    Publication date: April 11, 2024
    Inventors: Jin-Seong Lee, Tai Uk Rim, Ji Hun Kim, Kyo-Suk Chae
  • Patent number: 11948487
    Abstract: The present disclosure provides a current mirror circuit including a first transistor configured to be supplied with a data current from a data driving circuit; a second transistor configured to drive a light emitting diode by mirroring the data current transferred to the first transistor; a capacitor disposed between the first transistor and the second transistor and configured to store a voltage of a gate terminal of the second transistor therein; and a first switch disposed between the first transistor and the second transistor and configured to adjust an input current of the gate terminal of the second transistor.
    Type: Grant
    Filed: September 9, 2022
    Date of Patent: April 2, 2024
    Assignee: LX SEMICON CO., LTD.
    Inventors: Ji Hwan Kim, Sang Suk Kim, Jang Su Kim
  • Patent number: 11939308
    Abstract: The present disclosure provides a novel biphenyl derivative compound or a pharmaceutically acceptable salt thereof. The biphenyl derivative compound or pharmaceutically acceptable salt thereof according to the present disclosure is a compound that increases Nm23-H1/NDPK activity and can inhibit cancer metastasis and growth. Thus, it exhibits excellent effects not only on the prevention, alleviation and treatment of cancer, but also on the suppression of cancer metastasis.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: March 26, 2024
    Assignee: EWHA University—Industry Collaboration Foundation
    Inventors: Kong Joo Lee, Hee-Yoon Lee, Je Jin Lee, Hwang Suk Kim, Ji-Wan Seo, Hongsoo Lee, Ji Soo Shin, Bo-kyung Kim
  • Patent number: 11912674
    Abstract: The present invention provides methods for treating or ameliorating metabolic diseases, cholestatic liver diseases, or organ fibrosis, which comprises administering to a subject a therapeutically effective amount of a pharmaceutical composition comprising an isoxazole derivative, a racemate, an enantiomer, or a diastereoisomer thereof, or a pharmaceutically acceptable salt of the derivative, the racemate, the enantiomer, or the diastereoisomer.
    Type: Grant
    Filed: March 4, 2021
    Date of Patent: February 27, 2024
    Assignee: IL DONG PHARMACEUTICAL CO., LTD.
    Inventors: Jae-Hoon Kang, Hong-Sub Lee, Yoon-Suk Lee, Jin-Ah Jeong, Sung-Wook Kwon, Jeong-Guen Kim, Kyung-Sun Kim, Dong-Keun Song, Sun-Young Park, Kyeo-Jin Kim, Ji-Hye Choi, Hey-Min Hwang
  • Publication number: 20220316982
    Abstract: The present invention provides a load generating unit for testing an actuator, the unit including a first permanent magnet and a second permanent magnet spaced apart from each other; a third permanent magnet or a ferromagnetic body arranged in a row with the first permanent magnet and the second permanent magnet between the first permanent magnet and the second permanent magnet; and a first link passing through central axes of the first permanent magnet and the second permanent magnet to be penetrated to a central axis of the third permanent magnet and be connected to the actuator, wherein the third permanent magnet and the link are displaced in a length direction of the first link by a magnetic force. According to the present invention, the complexity, cost, and inertia of a device may be overcome and a load profile may be easily generated.
    Type: Application
    Filed: March 29, 2022
    Publication date: October 6, 2022
    Inventors: Seung-Chul HAN, Ji-Suk KIM, Ha-Jun LEE, Dae-Gyeom KANG
  • Patent number: 11227659
    Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.
    Type: Grant
    Filed: September 15, 2020
    Date of Patent: January 18, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bongsoon Lim, Jung-Yun Yun, Ji-Suk Kim, Sang-Won Park
  • Patent number: 11062775
    Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.
    Type: Grant
    Filed: April 13, 2020
    Date of Patent: July 13, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bongsoon Lim, Jung-Yun Yun, Ji-Suk Kim, Sang-Won Park
  • Publication number: 20200411103
    Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.
    Type: Application
    Filed: September 15, 2020
    Publication date: December 31, 2020
    Inventors: BONGSOON LIM, JUNG-YUN YUN, JI-SUK KIM, SANG-WON PARK
  • Publication number: 20200243140
    Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.
    Type: Application
    Filed: April 13, 2020
    Publication date: July 30, 2020
    Inventors: BONGSOON LIM, JUNG-YUN YUN, JI-SUK KIM, SANG-WON PARK
  • Patent number: 10658040
    Abstract: A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.
    Type: Grant
    Filed: November 15, 2016
    Date of Patent: May 19, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bongsoon Lim, Jung-Yun Yun, Ji-Suk Kim, Sang-Won Park
  • Patent number: 10635532
    Abstract: A method for controlling error check and correction (ECC) of a non-volatile memory device includes storing write data in a plurality of storing regions. The write data may be generated by performing ECC encoding. Individual ECC decoding may be performed based on each of a plurality of read data read out from the storing regions. Logic operation data may be provided by performing a logic operation of the read data when the individual ECC decoding fails with respect to all of the read data. Combined ECC decoding may be performed based on the logic operation data.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: April 28, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji-Suk Kim, Sang-In Park, Il-Han Park, Sang-Yong Yoon, Gyu-Seon Rhim, Sung-Woon Choi
  • Patent number: 10346097
    Abstract: A storage device includes a nonvolatile memory device and a controller configured to send first data, an address, and a first command to the nonvolatile memory device. The controller also sends at least one data to the nonvolatile memory device after sending the first command. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the first command. When receiving the at least one data from the controller, the nonvolatile memory device is configured to continue to perform the program operation based on the first data and the at least one data.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: July 9, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji-Suk Kim, Jung-Yun Yun, Bongsoon Lim