Abstract: A method includes placing a package component over a carrier, encapsulating the package component in an encapsulant, and forming a connection structure over and electrically coupling to the package component. The formation of the connection structure includes forming a first via group over and electrically coupling to the package component, forming a first conductive trace over and contacting the first via group, forming a second via group overlying and contacting the first conductive trace, wherein each of the first via group and the second via group comprises a plurality of vias, forming a second conductive trace over and contacting the second via group, forming a top via overlying and contacting the second conductive trace, and forming an Under-Bump-Metallurgy (UBM) over and contacting the top via.

Abstract: A device includes an interconnect device attached to a redistribution structure, wherein the interconnect device includes conductive routing connected to conductive connectors disposed on a first side of the interconnect device, a molding material at least laterally surrounding the interconnect device, a metallization pattern over the molding material and the first side of the interconnect device, wherein the metallization pattern is electrically connected to the conductive connectors, first external connectors connected to the metallization pattern, and semiconductor devices connected to the first external connectors.

Abstract: Interconnect devices, packaged semiconductor devices and methods are disclosed herein that are directed towards embedding a local silicon interconnect (LSI) device and through substrate vias (TSVs) into system on integrated substrate (SoIS) technology with a compact package structure. The LSI device may be embedded into SoIS technology with through substrate via integration to provide die-to-die FL connection arrangement for super large integrated Fan-Out (InFO) for SBT technology in a SoIS device. Furthermore, the TSV connection layer may be formed using lithographic or photoresist-defined vias to provide eLSI P/G out to a ball-grid-array (BGA) connection interface.

Abstract: An embodiment device includes: a first dielectric layer; a first photonic die and a second photonic die disposed adjacent a first side of the first dielectric layer; a waveguide optically coupling the first photonic die to the second photonic die, the waveguide being disposed between the first dielectric layer and the first photonic die, and between the first dielectric layer and the second photonic die; a first integrated circuit die and a second integrated circuit die disposed adjacent the first side of the first dielectric layer; conductive features extending through the first dielectric layer and along a second side of the first dielectric layer, the conductive features electrically coupling the first photonic die to the first integrated circuit die, the conductive features electrically coupling the second photonic die to the second integrated circuit die; and a second dielectric layer disposed adjacent the second side of the first dielectric layer.

Abstract: Circuit board includes conductive plate, core dielectric layer, metallization layer, first build-up stack, second build-up stack. Conductive plate has channels extending from top surface to bottom surface. Core dielectric layer extends on covering top surface and side surfaces of conductive plate. Metallization layer extends on core dielectric layer and within channels of conductive plate. Core dielectric layer insulates metallization layer from conductive plate. First build-up stack is disposed on top surface of conductive plate and includes conductive layers alternately stacked with dielectric layers. Conductive layers electrically connect to metallization layer. Second build-up stack is disposed on bottom surface of conductive plate. Second build-up stack includes bottommost dielectric layer and bottommost conductive layer. Bottommost dielectric layer covers bottom surface of conductive plate.

Abstract: A semiconductor structure includes a first redistribution structure, a first local interconnect component disposed on the first redistribution structure, and a first interconnect structure over a second side of the first local interconnect component. The first local interconnect component includes a first plurality of redistribution layers. The first plurality of redistribution layers includes a first plurality of conductive features on a first side of the first local interconnect component. Each of the first plurality of conductive features are coupled to respective conductive features of the first redistribution structure. The first interconnect structure includes a second plurality of conductive features and a third plurality of conductive features. The second plurality of conductive features are electrically coupled to the third plurality of conductive features through the first local interconnect component.

Abstract: A method of forming a semiconductor device includes attaching a first local interconnect component to a first substrate with a first adhesive, forming a first redistribution structure over a first side of the first local interconnect component, and removing the first local interconnect component and the first redistribution structure from the first substrate and attaching the first redistribution structure to a second substrate. The method further includes removing the first adhesive from the first local interconnect component and forming an interconnect structure over a second side of the first local interconnect component and the first encapsulant, the second side being opposite the first side. A first conductive feature of the interconnect structure is physically and electrically coupled to a second conductive feature of the first local interconnect component.

Abstract: In an embodiment, a structure includes a core substrate, a redistribution structure coupled to a first side of the core substrate, the redistribution structure including a plurality of redistribution layers, each of the plurality of redistribution layers comprising a dielectric layer and a metallization layer, and a first local interconnect component embedded in a first redistribution layer of the plurality of redistribution layers, the first local interconnect component including a substrate, an interconnect structure on the substrate, and bond pads on the interconnect structure, the bond pads of the first local interconnect component physically contacting a metallization layer of a second redistribution layer, the second redistribution layer being adjacent the first redistribution layer, the metallization layer of the second redistribution layer comprising first conductive vias, the dielectric layer of the first redistribution layer encapsulating the first local interconnect component.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.

Abstract: In an embodiment, a structure includes a core substrate, a redistribution structure coupled, the redistribution structure including a plurality of redistribution layers, the plurality of redistribution layers comprising a dielectric layer and a metallization layer, a first local interconnect component embedded in a first redistribution layer of the plurality of redistribution layers, the first local interconnect component comprising conductive connectors, the conductive connectors being bonded to a metallization pattern of the first redistribution layer, the dielectric layer of the first redistribution layer encapsulating the first local interconnect component, a first integrated circuit die coupled to the redistribution structure, a second integrated circuit die coupled to the redistribution structure, an interconnect structure of the first local interconnect component electrically coupling the first integrated circuit die to the second integrated circuit die, and a set of conductive connectors coupled to a

Abstract: A semiconductor package is provided. The semiconductor package includes: semiconductor dies, separated from one another, and including die I/Os at their active sides; and a redistribution structure, disposed at the active sides of the semiconductor dies and connected to the die I/Os, wherein the redistribution structure includes first and second routing layers sequentially arranged along a direction away from the die I/Os, the first routing layer includes a ground plane and first signal lines laterally surrounded by and isolated from the first ground plane, the first signal lines connect to the die I/Os and rout the die I/Os from a central region to a peripheral region of the redistribution structure, the second routing layer includes second signal lines and ground lines, and the second signal lines and the ground lines respectively extend from a location in the peripheral region to another location in the peripheral region through the central region.

Abstract: A method of fabrication a package and a stencil structure are provided. The stencil structure includes a first carrier having a groove and stencil units placed in the groove of the first carrier. At least one of the stencil units is slidably disposed along sidewalls of another stencil unit. Each of the stencil units has openings.

Abstract: Provided are a package structure and a method of forming the same. The method includes: laterally encapsulating a device die and an interconnect die by a first encapsulant; forming a redistribution layer (RDL) structure on the device die, the interconnect die, and the first encapsulant; bonding a package substrate onto the RDL structure, so that the RDL structure is sandwiched between the package substrate and the device die, the interconnect die, and the first encapsulant; laterally encapsulating the package substrate by a second encapsulant; and bonding a memory die onto the interconnect die, wherein the memory die is electrically connected to the device die through the interconnect die and the RDL structure.

Abstract: A package structure includes a redistribution structure and a core substrate. The redistribution structure includes a plurality of connection pads. The core substrate is disposed on the redistribution structure and electrically connected to the plurality of connection pads. The core substrate includes a first interconnection layer and a plurality of conductive terminals. The first interconnection layer has a first region, a second region surrounding the first region, and a third region surrounding the second region, and includes a plurality of bonding pads located in the first region, the second region and the third region. The conductive terminals are electrically connecting the plurality of bonding pads to the plurality of connection pads of the redistribution structure, wherein the plurality of conductive terminals located over the first region, the second region and the third region of the first interconnection layer have different heights.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.

Abstract: Semiconductor devices and methods of manufacture are described herein. The methods include forming a local organic interconnect (LOI) by forming a stack of conductive traces embedded in a passivation material, forming first and second local contacts over the passivation material, the second local contact being electrically coupled to the first local contact by a first conductive trace of the stack. The methods further include forming a backside redistribution layer (RDL) and a front side RDL on opposite sides of the LOI with TMVs electrically coupling the backside and front side RDLs to one another. First and second external contacts are formed over the backside RDL for mounting of semiconductor devices, the first and second external contacts being electrically connected to one another by the LOI. An interconnect structure is attached to the front side RDL for further routing. External connectors electrically coupled to the external contacts at the backside RDL.

Abstract: A method includes placing a package component over a carrier, encapsulating the package component in an encapsulant, and forming a connection structure over and electrically coupling to the package component. The formation of the connection structure includes forming a first via group over and electrically coupling to the package component, forming a first conductive trace over and contacting the first via group, forming a second via group overlying and contacting the first conductive trace, wherein each of the first via group and the second via group comprises a plurality of vias, forming a second conductive trace over and contacting the second via group, forming a top via overlying and contacting the second conductive trace, and forming an Under-Bump-Metallurgy (UBM) over and contacting the top via.

Abstract: A method of forming a semiconductor structure includes the following operations. A first conductive structure is formed on a first side of a first glass carrier. A second glass carrier is bonded to the first conductive structure. Conductive vias are formed to penetrate through the first glass carrier, and the conductive vias are electrically connected to the first conductive structure. A second conductive structure is formed on a second side of the first glass carrier opposite to the first side, and the second conductive structure is electrically connected to the conductive vias.

Abstract: An interconnect structure includes a first conductor, a second conductor, a dielectric block, a substrate, and a pair of conductive lines. The first conductor and the second conductor form a differential pair design. The dielectric block surrounds the first conductor and the second conductor. The first conductor is separated from the second conductor by the dielectric block. The substrate surrounds the dielectric block and is spaced apart from the first conductor and the second conductor. The pair of conductive lines is connected to the first conductor and the second conductor, respectively, and extends along a top surface of the dielectric block and a top surface of the substrate.

Abstract: Interconnect devices, packaged semiconductor devices and methods are disclosed herein that are directed towards embedding a local silicon interconnect (LSI) device and through substrate vias (TSVs) into system on integrated substrate (SoIS) technology with a compact package structure. The LSI device may be embedded into SoIS technology with through substrate via integration to provide die-to-die FL connection arrangement for super large integrated Fan-Out (InFO) for SBT technology in a SoIS device. Furthermore, the TSV connection layer may be formed using lithographic or photoresist-defined vias to provide eLSI P/G out to a ball-grid-array (BGA) connection interface.