Abstract: An embodiment of this disclosure discloses a metal wire grid comprising: a patterned metal layer and a patterned antireflective layer located on the patterned metal layer, wherein a surface of the antireflective layer distal to the patterned metal layer has a plurality of continuous pits. Embodiments of this disclosure further disclose a method of manufacturing a metal wire grid and a display panel.

Abstract: The embodiments of the present disclosure provide an array substrate, a preparation method thereof, and a display device. The preparation method of an array substrate comprises: forming the active layer, a gate insulating layer, the gate metal layer and the patterned photoresist sequentially on a substrate; forming a gate electrode transition pattern by etching a gate metal layer via a patterned photoresist, using a wet etching process and a dry etching process sequentially; and doping an area of the active layer not sheltered by the gate electrode transition pattern with ions to form a heavily doped area of the active layer.

Abstract: In embodiments of the present disclosure, there is provided a display substrate assembly including: a base substrate; a light shielding layer on the base substrate; and an active layer of a thin film transistor, above the base substrate. An orthographic projection of the active layer on the base substrate in a thickness direction of the base substrate is within an orthographic projection of the light shielding layer on the base substrate in the thickness direction of the base substrate, and the light shielding layer includes an ion-doped amorphous silicon layer. In embodiments of the present disclosure, there is also provided a method of manufacturing a display substrate assembly and a display apparatus including the display substrate assembly.

Abstract: The present disclosure provides a display backplane and a method for manufacturing the same, a display panel, and a display device. The display backplane includes: a substrate; a first thin film transistor located on one side of the substrate; and a second thin film transistor located on the one side of the substrate, wherein: the first thin film transistor comprises a first active layer, the second thin film transistor comprises a second active layer, wherein the first active layer and the second active layer are located in a same layer, and a material of the first active layer is different from that of the second active layer.

Abstract: The present disclosure provides a polarizing device and a method for preparing the same, a display substrate, and a display device. The polarizing device includes: a base substrate, a metal wire grid, and an anti-reflection layer, in which the metal wire grid is arranged on the base substrate, the anti-reflection layer is arranged on the surface of the metal wire grid away from the base substrate, and the anti-reflection layer is a carbon film layer.

Abstract: An embodiment of this disclosure discloses a metal wire grid comprising: a patterned metal layer and a patterned antireflective layer located on the patterned metal layer, wherein a surface of the antireflective layer distal to the patterned metal layer has a plurality of continuous pits. Embodiments of this disclosure further disclose a method of manufacturing a metal wire grid and a display panel.

Abstract: An array substrate includes a base substrate and a plurality of pixel units disposed on a base substrate, and at least one pixel unit includes a plurality of thin film transistors, a first electrode, and a second electrode. The plurality of thin film transistors include at least one first thin film transistor including a first active pattern, a first gate, a first source and a first drain. The first electrode is disposed in a same layer as the first active pattern, the first electrode is coupled to the first drain, and the second electrode is disposed in a same layer as the first gate. Orthographic projections of any two in a group consisting of the first electrode, the second electrode, and the first drain on the base substrate have an overlapping region.

Abstract: The disclosure discloses a method for roughening a surface of a metal layer, a thin film transistor, and a method for fabricating the same. The method for roughening the surface of a metal layer includes: forming a first photo-resist layer on the surface of the metal layer, and processing the first photo-resist layer at high temperature; and stripping the first photo-resist layer to roughen the surface of the metal layer.

Abstract: A dry etching method, including: etching a silicon-containing thin film with a first gas by a first preset thickness; etching the silicon-containing thin film with a second gas by a second preset thickness, to remove etching residues generated after etching the silicon-containing thin film by the first preset thickness; after the etching residues are removed, etching the silicon-containing thin film with the first gas by a third preset thickness, which is less than the first preset thickness; wherein the first gas includes chlorine gas, and the second gas includes fluoride gas.

Abstract: A method for manufacturing an array substrate, an array substrate and a display panel are provided. The method includes forming patterns of a gate metal layer and a gate insulating layer successively on a base plate, forming a pattern of a semiconductor layer, where the pattern of the semiconductor layer comprises a pattern of an active region and a pattern of a pixel electrode region, the semiconductor layer comprises an insulative oxide layer and a semiconductive oxide layer stacked on the insulative oxide layer, and the insulative oxide layer is located between the gate insulating layer and the semiconductive oxide layer, forming a pattern of a source and drain metal layer, and subjecting the semiconductive oxide layer in the pixel electrode region to plasma treatment, to convert the semiconductive oxide layer in the pixel electrode region into a conductor.

Abstract: A dry etching method, including: etching a silicon-containing thin film with a first gas by a first preset thickness; etching the silicon-containing thin film with a second gas by a second preset thickness, to remove etching residues generated after etching the silicon-containing thin film by the first preset thickness; after the etching residues are removed, etching the silicon-containing thin film with the first gas by a third preset thickness, which is less than the first preset thickness; wherein the first gas includes chlorine gas, and the second gas includes fluoride gas.

Abstract: The embodiments of the present disclosure provide an array substrate, a preparation method thereof, and a display device. The preparation method of an array substrate comprises: forming the active layer, a gate insulating layer, the gate metal layer and the patterned photoresist sequentially on a substrate; forming a gate electrode transition pattern by etching a gate metal layer via a patterned photoresist, using a wet etching process and a dry etching process sequentially; and doping an area of the active layer not sheltered by the gate electrode transition pattern with ions to form a heavily doped area of the active layer.

Abstract: A TFT, a manufacturing method thereof, and a display device are provided. The TFT includes a semiconductor layer and an etch-stop layer merely covering a channel region of the semiconductor layer. The semiconductor layer and the etch-stop layer are formed through a single patterning process.

Abstract: A display panel includes a first substrate and a second substrate which are arranged opposed to each other. The space between the first substrate and the second substrate is separated into a plurality of sub-pixel regions. Within each sub pixel region, a first electrode, a first fluid layer, a second fluid layer, a hydrophobic dielectric layer and a second electrode are arranged in this order. The first fluid layer is made of hydrophilic liquid. The second fluid layer is made of ink. When no electric field is applied between the first electrode and the second electrode, the ink spreads over the surface of the hydrophobic dielectric layer. When an electric field is applied between the first electrode and the second electrode, the ink aggregates to expose the hydrophobic dielectric layer.

Abstract: A method for manufacturing an array substrate, an array substrate and a display panel are provided. The method includes forming patterns of a gate metal layer and a gate insulating layer successively on a base plate, forming a pattern of a semiconductor layer, where the pattern of the semiconductor layer comprises a pattern of an active region and a pattern of a pixel electrode region, the semiconductor layer comprises an insulative oxide layer and a semiconductive oxide layer stacked on the insulative oxide layer, and the insulative oxide layer is located between the gate insulating layer and the semiconductive oxide layer, forming a pattern of a source and drain metal layer, and subjecting the semiconductive oxide layer in the pixel electrode region to plasma treatment, to convert the semiconductive oxide layer in the pixel electrode region into a conductor.

Abstract: Provided are a color film, a substrate and a display device. The color film is used for transmitting a light with one color of three primary colors, and comprises a first absorbing pigment and a second absorbing pigment, wherein absorption spectrum ranges of the first and second absorbing pigments correspond to spectral bands of lights with the other two colors of the three primary colors respectively.

Abstract: The disclosure discloses a method for roughening a surface of a metal layer, a thin film transistor, and a method for fabricating the same. The method for roughening the surface of a metal layer includes: forming a first photo-resist layer on the surface of the metal layer, and processing the first photo-resist layer at high temperature; and stripping the first photo-resist layer to roughen the surface of the metal layer.

Abstract: A TFT, a manufacturing method thereof, and a display device are provided. The TFT includes a semiconductor layer and an etch-stop layer merely covering a channel region of the semiconductor layer. The semiconductor layer and the etch-stop layer are formed through a single patterning process.

Abstract: The present disclosure provides an array substrate and a method for manufacturing the same and a display panel and a display device comprising the same. The method for manufacturing the array substrate provided in the present disclosure comprises: forming a first metal layer; forming an uneven structure on a surface of the first metal layer; providing a photoresist on the surface of the first metal layer where the uneven structure has been formed; and exposing and developing the photoresist and etching the first metal layer so as to form a first metal pattern.

Abstract: An array substrate and a fabrication method thereof, and a display device are provided. The array substrate comprises: a thin film transistor (TFT 10) provided on a base substrate (01), a first passivation layer (200) provided on the thin film transistor (TFT 10), and a transparent electrode layer (300) provided on a surface of the first passivation layer (200). The first passivation layer (300) includes: a first sub-thin film layer (210), and a second sub-thin film layer (211) which is provided on a surface of the first sub-thin film layer (210) and in contact with the transparent electrode layer (300); and a film density of the second sub-thin film layer (211) is greater than that of the first sub-thin film layer (210).