Abstract: A projection exposure system (10) includes: a mask holding device (14), a substrate holding device (36), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system, which defined position is mechanically uncoupled from the position of the mask holding device. The projection exposure system also includes a detector (52) arranged to record an image of the measurement structure imaged by the projection optics. During operation of the system, the imaging of the mask structures and of the measurement structure takes place at the same time by the projection optics. An evaluation device (54) establishes a lateral position of the image of the measurement structure in the area of the detector during the exposure process.

Abstract: An illumination system and a projection objective of a mask inspection apparatus are provided. During operation of the mask inspection apparatus, the illumination system illuminates a mask with an illumination bundle of rays having a centroid ray that has a direction dependent on the location of the incidence of the illumination bundle of rays on the mask.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding to device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding to device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: A beam control apparatus for an illumination beam includes an imaging illumination optical unit assembly for imaging an intermediate focus of the illumination beam onto an object field to be illuminated. A control component that influences a beam path of the illumination beam is displaceable in at least one degree of freedom by at least one displacement actuator. A position sensor device of the beam control apparatus detects a position of the intermediate focus. A control device of the beam control apparatus is signal-connected to the position sensor device and the displacement actuator. From an intermediate focus position signal received from the position sensor device, the control device calculates control signals for the displacement actuator and forwards the latter to the displacement actuator for controlling the position of the intermediate focus. This results in a beam control apparatus which makes well-controllable illumination possible together with a simple construction.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: An illumination system and a projection objective of a mask inspection apparatus are provided. During operation of the mask inspection apparatus, the illumination system illuminates a mask with an illumination bundle of rays having a centroid ray that has a direction dependent on the location of the incidence of the illumination bundle of rays on the mask.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: A scattered light measurement device includes an illumination mask providing measuring radiation on an entrance side (1a) of a test component (1) and a detection part (3-6) for detection of light scattered by the test component and disposed on an exit side (1b) of the test component. The illumination mask includes at least one scattered light measurement structure, wherein the scattered light measurement structure has a scattered light marker zone and wherein the scattered light marker zone has a rotationally non-symmetric shape.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: An illumination mask (10a) for a device for the range-resolved determination of scattered light, having one or more scattered-light measuring structures (11a) which respectively include an inner dark-field zone which defines a minimum scattering range, to an associated image-field mask and a corresponding device is provided. Also provided is an associated operating method and a microlithography projection-exposure system having such a device. The scattered-lighter measuring structure in the illumination mask has a scattered-light marker zone (20a) in the form of a bright-field zone, which on the one hand borders the inner dark-field zone and on the other hand borders an outer dark-field zone, which defines a maximum scattering range. The device may optionally be designed for the multi-channel measuring of scattered light by using a suitable image-field mask and also for multi-channel wavefront measurement, and the detection part may contain an immersion medium.

Abstract: An illumination mask (10a) for a device for the range-resolved determination of scattered light, having one or more scattered-light measuring structures (11a) which respectively include an inner dark-field zone which defines a minimum scattering range, to an associated image-field mask and a corresponding device is provided. Also provided is an associated operating method and a microlithography projection-exposure system having such a device. The scattered-lighter measuring structure in the illumination mask has a scattered-light marker zone (20a) in the form of a bright-field zone, which on the one hand borders the inner dark-field zone and on the other hand borders an outer dark-field zone, which defines a maximum scattering range. The device may optionally be designed for the multi-channel measuring of scattered light by using a suitable image-field mask and also for multi-channel wavefront measurement, and the detection part may contain an immersion medium.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.