Abstract: It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.

Abstract: The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.

Abstract: A structure and method operable to create a reusable template for detachable thin semiconductor substrates is provided. The template has a shape such that the 3-D shape is substantially retained after each substrate release. Prior art reusable templates may have a tendency to change shape after each subsequent reuse; the present disclosure aims to address this and other deficiencies from the prior art, therefore increasing the reuse life of the template.

Abstract: The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.

Abstract: It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.

Abstract: A structure and method operable to create a reusable template for detachable thin semiconductor substrates is provided. The template has a shape such that the 3-D shape is substantially retained after each substrate release. Prior art reusable templates may have a tendency to change shape after each subsequent reuse; the present disclosure aims to address this and other deficiencies from the prior art, therefore increasing the reuse life of the template.

Abstract: The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.