Abstract: Embodiments of the invention provide a memory device that may be accessed by a plurality of controllers or processor cores via respective ports of the memory device. Each controller may be coupled to a respective port of the memory device via a data bus. Each port of the memory device may be associated a predefined section of memory, thereby giving each controller access to a distinct section of memory without interference from other controllers. A common command/address bus may couple the plurality of controllers to the memory device. Each controller may assert an active signal on a memory access control bus to gain access to the command/address bus to initiate a memory access.

Abstract: A system and method utilize a memory device that may be accessed by a plurality of controllers or processor cores via respective ports of the memory device. Each controller may be coupled to a respective port of the memory device via a data bus. Each port of the memory device may be associated with a predefined section of memory, thereby giving each controller access to a distinct section of memory without interference from other controllers. A common command/address bus may couple the plurality of controllers to the memory device. Each controller may assert an active signal on a memory access control bus to gain access to the command/address bus to initiate a memory access. In some embodiments, a plurality of memory devices may be arranged in a memory package in a stacked die memory configuration.

Abstract: A system including a central processing unit, a first memory channel being configured to couple the central processing unit to a first semiconductor memory unit, wherein the first memory channel is configured to be clocked with a first clock frequency, and a second memory channel being configured to couple the central processing unit to a second semiconductor memory unit, wherein the second memory channel is configured or configurable to be clocked with a second clock frequency smaller than the first clock frequency.

Abstract: Distributed command and address bus architecture for memory modules and circuit boards is described. In one embodiment, a memory module includes a plurality of connector pins disposed on an edge of a circuit board, the plurality of connector pins comprising first pins coupled to a plurality of data bus lines, second pins coupled to a plurality of command and address bus lines, wherein the second pins are disposed in a first and a second region, wherein a portion of the first pins is disposed between the first and the second regions.

Abstract: The invention provides a method and an apparatus for determining a skew of each data bit of an encoded data word received by a receiver via an interface from a transmitter comprising the steps of performing an error check and correction of the received and sampled encoded data word to calculate an error corrected encoded data word corresponding to the encoded data word transmitted by the transmitter, and correlating a sequence of error corrected encoded data words with the sampled encoded data words to determine a skew of each data bit of said received encoded data words.

Abstract: The multi-die memory comprises a first die and a second die. The first die comprises a first group of memory banks, and the second die comprises a second group of memory banks. The first group of memory banks and the second group of memory banks are coupled to a common memory interface. The common memory interface couples the multi-die memory with an internal connection.

Abstract: A memory system includes a number of integrated circuit chips coupled to a bus. Each of the integrated circuit chips has an input/output node coupled to the bus, the input/output node having a programmable on-die termination resistor. The input/output node of one of the integrated circuit chips is accessed via the bus. The programmable on-die termination resistor of each of the integrated circuit chips is independently set to a termination resistance. The termination resistance is determined by a transaction type and which of the plurality memory devices is being accessed, which information can be transmitted over a separate transmission control bus.

Abstract: The invention provides a memory circuit comprising a plurality of storage cells for storing data and redundant spare storage cells for replacing defective storage cells, and a memory access logic for accessing said storage cells connected to a replacement setting register which is writeable during operation of said memory circuit to store replacement settings.

Abstract: An integrated circuit includes a device stack including: a memory device with a first wireless coupling element, and a semiconductor device with a second wireless coupling element. The first and second wireless coupling elements are arranged face-to-face and are configured to provide a wireless connection between the memory device and the semiconductor device.

Abstract: Method and apparatus that relate to a storage device comprising a plurality of memory cells, an interface device configured to connect the storage device to a host system and configured to transmit signals to read and write data from the host system to the memory cells via a first and second data path, and a logic unit. The logic unit is configured to read and write data from the plurality of memory cells via the second data path, and configured to perform logic operations on data stored in the plurality of memory cells. When performing read and write operations, the first data path excludes the logic unit, and the second data path includes the logic unit. Furthermore, the logic unit is communicatively coupled between the interface device and the plurality of memory cells. Additionally, a method for manufacturing the memory device is provided.

Abstract: Stackable circuit devices include mechanical and electrical connection elements that are optionally disengageable and disconnectable. The mechanical connection elements comprise pairs of complementary male and female plug-in engagement elements respectively arranged at opposite matching positions on top and bottom faces of each device package. The male and female plug-in engagement elements provide a mutual plug-in engagement. The electrical connection elements comprise a plurality of first and second complementary contact elements respectively arranged in opposite and matching positions on either the top or bottom face of each device package. When the circuit devices are stacked, the first contact elements are respectively configured to provide an electrical connection to a complementary matching second contact element of an adjacently plugged in circuit device.

Abstract: Memory devices and memory modules are disclosed. In one embodiment, a memory device includes a semiconductor substrate having a first edge and a second edge opposed to the first edge. A plurality of memory banks is disposed at a central portion of the semiconductor substrate, each memory bank including a plurality of memory cells. A plurality of input/output contacts is disposed between the first edge and the memory banks. Delay locked loop circuitry is disposed adjacent the first edge. A plurality of address and command contacts is disposed between the second edge and the memory banks.

Abstract: A method of operating an integrated circuit involves supplying an instruction portion of a command to the integrated circuit to specify an operation to be performed by the integrated circuit. At least some types of commands also include an attributes portion that provides additional information about the operation to be performed. The attributes portion of the command is supplied to the integrated circuit with a delay relative to the instruction portion of the command. The integrated circuit selectively enables circuitry for processing the attributes portion if the integrated circuit determines from the received instruction portion that the command also includes an attributes portion. The delay between the two portions of the command provides sufficient time for the integrated circuit to enable the attributes processing circuitry, which, in a default state, can be disabled during an active mode of the integrated circuit to save power.

Abstract: Horizontal dual in-line memory modules are disclosed. In one embodiment, the memory module includes a circuit board, a plurality of memory chips attached to a top surface of the circuit board, and a plurality of connector contacts disposed under a back surface of the circuit board and extending away from the memory chips, the connector contacts being electrically coupled to the memory chips, the back surface opposite the top surface of the circuit board.

Abstract: Distributed command and address bus architecture for memory modules and circuit boards is described. In one embodiment, a memory module includes a plurality of connector pins disposed on an edge of a circuit board, the plurality of connector pins comprising first pins coupled to a plurality of data bus lines, second pins coupled to a plurality of command and address bus lines, wherein the second pins are disposed in a first and a second region, wherein a portion of the first pins is disposed between the first and the second regions.

Abstract: Embodiments of the invention provide a memory device that may be accessed by a plurality of controllers or processor cores via respective ports of the memory device. Each controller may be coupled to a respective port of the memory device via a data bus. Each port of the memory device may be associated a predefined section of memory, thereby giving each controller access to a distinct section of memory without interference from other controllers. A common command/address bus may couple the plurality of controllers to the memory device. Each controller may assert an active signal on a memory access control bus to gain access to the command/address bus to initiate a memory access.

Abstract: Embodiments of the invention provide a memory device that may be accessed by a plurality of controllers or processor cores via respective ports of the memory device. Each controller may be coupled to a respective port of the memory device via a data bus. Each port of the memory device may be associated a predefined section of memory, thereby giving each controller access to a distinct section of memory without interference from other controllers. A common command/address bus may couple the plurality of controllers to the memory device. Each controller may assert an active signal on a memory access control bus to gain access to the command/address bus to initiate a memory access. In some embodiments, the memory device may be a package comprising a plurality of stacked memory dies.

Abstract: Horizontal dual in-line memory modules are disclosed. In one embodiment, the memory module includes a circuit board, a plurality of memory chips attached to a top surface of the circuit board, and a plurality of connector contacts disposed under a back surface of the circuit board and extending away from the memory chips, the connector contacts being electrically coupled to the memory chips, the back surface opposite the top surface of the circuit board.

Abstract: Memory devices and memory modules are disclosed. In one embodiment, a memory device includes a semiconductor substrate having a first edge and a second edge opposed to the first edge. A plurality of memory banks is disposed at a central portion of the semiconductor substrate, each memory bank including a plurality of memory cells. A plurality of input/output contacts is disposed between the first edge and the memory banks. Delay locked loop circuitry is disposed adjacent the first edge. A plurality of address and command contacts is disposed between the second edge and the memory banks.

Abstract: Memory modules, computing systems, and methods of manufacturing memory modules are disclosed. In one embodiment, a memory module includes a substrate having a first side and a second side opposed to the first side. A plurality of pins is disposed on the first side of the substrate. A first plurality of memory chips are arranged in a first chip layer, the first chip layer overlying the second side of the substrate. Electrical contacts of the first plurality of memory chips are electrically coupled to the pins. A second plurality of memory chips is arranged in a second chip layer, the second chip layer overlying the first chip layer. Electrical contacts of the second plurality of memory chips are electrically coupled to the pins.