Abstract: A group of embodiments for enabling the replacement of damaged shackles for multiple types of portable locks is disclosed. The embodiments have the ability to alter the shackle size and configuration for multiple types of portable locks by substituting one type of shackle with a different shackle, with no tools or special skills required.

Abstract: A group of embodiments for enabling the replacement of damaged shackles for multiple types of portable locks is disclosed. The embodiments have the ability to alter the shackle size and configuration for multiple types of portable locks by substituting one type of shackle with a different shackle, with no tools or special skills required.

Abstract: Components can be damaged if they are exposed to excess voltages. A device is disclosed herein which can be placed in series with a component and a node that may be exposed to high voltages. If the voltage becomes too high, the device can autonomously switch into a relatively high impedance state, thereby protecting the other components.

Abstract: A transistor switch device is provided that exhibits relatively good voltage capability and relatively easy drive requirements to turn the device on and off. This can reduce transient drive current flows that may perturb other components.

Abstract: A transistor switch device is provided that exhibits relatively good voltage capability and relatively easy drive requirements to turn the device on and off. This can reduce transient drive current flows that may perturb other components.

Abstract: A transistor switch device is provided that exhibits relatively good voltage capability and relatively easy drive requirements to turn the device on and off. This can reduce transient drive current flows that may perturb other components.

Abstract: Components can be damaged if they are exposed to excess voltages. A device is disclosed herein which can be placed in series with a component and a node that may be exposed to high voltages. If the voltage becomes too high, the device can autonomously switch into a relatively high impedance state, thereby protecting the other components.

Abstract: A system and method is provided for controlling access to software via a physical object. The system may include one or more of a physical object, such as a toy, a computing device, and a server. The toy may include a unique identifier that permits an owner of the toy to download software to the computing device via the server. In some variations, a purchaser of the toy may be permitted to download software to the computing device directly from a storage device associated with the toy.

Abstract: An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.

Abstract: A group of embodiments for enabling the replacement of damaged shackles for multiple types of portable locks is disclosed. The embodiments have the ability to alter the shackle size and configuration for multiple types of portable locks by substituting one type of shackle with a different shackle, with no tools or special skills required.

Abstract: A group of embodiments for enabling the replacement of damaged shackles for multiple types of portable locks is disclosed. The embodiments have the ability to alter the shackle size and configuration for multiple types of portable locks by substituting one type of shackle with a different shackle, with no tools or special skills required.

Abstract: An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.

Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

Abstract: A group of embodiments for enabling the replacement of damaged shackles for multiple types of portable locks is disclosed. The embodiments have the ability to alter the shackle size and configuration for multiple types of portable locks by substituting one type of shackle with a different shackle, with no tools or special skills required.

Abstract: A protection device is provided that is placed in series connection between an input or signal node and a node to be protected. If the node to be protected is a relatively high impedance node, such as the gate of a MOSFET, then the protection device need not carry much current. This enables it to be built to be very fast. This enables it to respond rapidly to an overvoltage event so as to protect the circuit connected to the node to be protected.

Abstract: A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have been modified or omitted. These structures lessen the current flow or electric field gradients at the end portions of the drain. This provides a transistor that has improved on-state breakdown performance without sacrificing off state breakdown performance.

Abstract: A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have been modified or omitted. These structures lessen the current flow or electric field gradients at the end portions of the drain. This provides a transistor that has improved on-state breakdown performance without sacrificing off state breakdown performance.

Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

Abstract: A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.

Abstract: A method of forming a junction field effect transistor, the transistor comprising: a back gate; a channel; a top gate; a drain and a source in current flow with the channel; wherein the method comprises selecting a first channel dimension between the top gate and the back gate such that a significant current flow path in the channel occurs in a region of relatively low electric field strength.