Abstract: The socket releasably couples a packaged integrated circuit to a circuit board. The socket includes a clamp, a latch, and an array interconnect. The clamp is configured to be pivotally coupled to a circuit board. The latch is configured to be coupled to the circuit board and configured to releasably hold the clamp in a predetermined position. The array interconnect configured to be coupled to the printed circuit board. In use the latch releasably holds the hinged clamp in the predetermined position to clamp both a packaged integrated circuit between the clamp and the array interconnect, and the array interconnect between the packaged integrated circuit and the circuit board.

Abstract: In a transceiver system a first interface receives data from a first channel using a first clock signal and transmits data to the first channel using a second clock signal. A second interface receives data from a second channel using a third clock signal and transmits data to the second channel using a fourth clock signal. A re-timer re-times data received from the first channel using the first clock signal and retransmits the data to the second channel using the fourth clock signal.

Abstract: An output driver circuit and current control technique to facilitate high-speed buses with low noise is used to interface with high-speed dynamic RAMs (DRAMs). The architecture includes the following components: an input isolation block (120), an analog voltage divider (104), an input comparator (125), a sampling latch (130), a current control counter (115), and a bitwise output driver (output driver A 107 and output driver B 111).

Abstract: A semiconductor memory device has a memory core that includes at least eight banks of dynamic random access storage cells and an internal data bus coupled to the memory core. The internal data bus receives a plurality of data bits from a selected bank of the memory core. The semiconductor memory device further comprises a first interface to receive a read command from external to the semiconductor memory device and a second interface to output first and second subsets of the plurality of data bits. The first subset is output during a first phase of an external clock signal and the second subset is output during a second phase of the external clock signal. The first phase includes a first edge transition and the second phase includes a second edge transition. The second edge transition is an opposite edge transition with respect to the first edge transition.

Abstract: A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.

Abstract: A method of operating an integrated circuit including an output driver. The method includes storing a value in a register, wherein the value is representative of a voltage swing setting of an output driver. The voltage swing setting of the output driver is adjusted using a counter that holds a count value representing an update to the voltage swing setting. The count value is updated in accordance with a signal that indicates an adjustment to the voltage swing setting. In addition, an integrated circuit memory device comprising an output driver, a register and a counter is provided. The counter updates a count value in response to a signal that indicates a direction to adjust the count value.

Abstract: A transceiver device comprises a transmitter to transmit signals over a plurality of conductors to a memory device. An interface receives control information from a serial communication path coupled to a controller device. The control information is provided to the memory device as the signals using the transmitter. A register stores a control parameter that specifies a drive strength adjustment to the signals to transmit over the plurality of conductors to the memory device using the transmitter.

Abstract: A transceiver comprises a first interface to receive a first signal, through a first channel, from a memory device. A transmitter transmits a second signal that represents the first signal, through a second channel, to a master device. A plurality of registers stores a plurality of values provided by the master device. The plurality of values includes a first value that specifies a transmit timing adjustment to the second signal to transmit to the master device by the transmitter.

Abstract: In a transceiver system a first interface receives data from a first channel using a first clock signal and transmits data to the first channel using a second clock signal. A second interface receives data from a second channel using a third clock signal and transmits data to the second channel using a fourth clock signal. A re-timer re-times data received from the first channel using the first clock signal and retransmits the data to the second channel using the fourth clock signal.

Abstract: A system including an integrated circuit memory device. The integrated circuit device comprises a register to store a value representative of an output voltage setting. A circuit holds a value representative of an adjustment to the output voltage setting. An output driver outputs a drive voltage during a calibration operation, wherein a signal is generated based on a comparison between a signal derived from the drive voltage and a reference voltage. The signal updates the value representative of the adjustment to the output voltage setting.

Abstract: A method of operating a memory system that includes an integrated circuit memory device is provided. A value representing an output voltage setting of an output driver of the memory device is stored in a register. The output driver outputs the drive voltage. A signal derived from the drive voltage is compared to a reference signal to generate a signal that indicates an adjustment to the output voltage setting. The output voltage setting of the output driver is adjusted using a counter that holds a count value representing an update to the output voltage setting. The count value is updated in accordance with a signal that indicates the adjustment to the output voltage setting.

Abstract: A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.

Abstract: An output driver circuit and current control technique to facilitate high-speed buses with low noise is used to interface with high-speed dynamic RAMs (DRAMs). The architecture includes the following components: an input isolation block (120), an analog voltage divider (104), an input comparator (125), a sampling latch (130), a current control counter (115), and a bitwise output driver (output driver A 107 and output driver B 111).

Abstract: A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.

Abstract: A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.

Abstract: A transceiver system is described. A secondary memory module is coupled to a primary channel for receiving data and signals from a controller. The secondary memory module comprises a memory and a secondary channel for transmitting the data and control signals to the memory. The secondary memory module further comprises a transceiver coupled to the primary channel and the secondary channel. The transceiver is designed to electrically isolate the secondary channel from the primary channel. The transceiver is a low latency repeater to permit the data and the control signals from the controller to reach the memory, such that a latency of a data request from the controller is independent of a distance of the transceiver from the controller.

Abstract: A chip socket assembly provides for the mechanical and electrical coupling of edge-mountable chips to a bus of a circuit board with relative ease. An edge-mountable chip may be placed in a slot defined by a base. A clip may be attached to the base to retain the chip in the base. Alternatively, the base and the package of the chip may be configured such that the chip mates with the base in retaining the chip in the base. With the chip socket assembly, users may add, remove, or replace single chips and therefore expand the functionality of a system with the granularity of a single chip in a relatively easy manner. A chip file assembly may also be used to provide for the mechanical and electrical coupling of a plurality of edge-mountable chips to a bus of a circuit board with relative ease. Assemblies for securing horizontal chip packages are also described.

Abstract: A memory system and method of adjusting an output driver characteristic of a memory device that is included in the memory system. The method includes providing a command to the memory device that specifies a calibration mode and, during the calibration mode, driving a voltage level onto the first signal line using a first output driver. A first voltage level is derived from an amount of voltage swing generated by the first output driver driving the voltage level onto the first signal line. The method also includes: actively coupling a first comparator to the first signal line; when the first comparator is coupled to the first signal line, comparing the first voltage level with a reference voltage using the first comparator; and adjusting the amount of voltage swing to arrive at a calibrated voltage swing level. In addition, the method includes actively isolation the first comparator from the first signal line upon exiting the calibration mode.

Abstract: A synchronization circuit for gradually shifting the phase domain of a control signal to permit synchronization of a signal with a clock signal in a different phase domain in a system with a single frequency, but arbitrary phase relationship. The present invention allows a control signal in the phase domain of an internal clock to be synchronized with an external clock, when the phase domain of the external clock differs substantially from that of the internal clock. In synchronizing the control signal to the external clock, the present invention avoids the generation of runt pulses while providing a control signal synchronized to the external clock in the least amount of time feasible (i.e., with the lowest latency time). Because the present invention has no failure modes due to timing relationships, MTBF is infinite for failures caused by such relationships and therefore need not be a concern. This also implies that no risk is posed to the proper operation of the circuits driven thereby.

Abstract: A socket (14) includes a first bus conductor (22a) having two or more contact regions (24) and a second bus conductor (22b) arranged substantially parallel to the first bus conductor and having two or more contact regions (24). The first and second bus conductors are spaced relative to one another so as to provide a predetermined electrical impedance and may be arranged to carry electrical signals as transmission lines. A dielectric spacer (36) may be disposed between the first and second bus conductors to provide the spacing. Contact regions (24) of the first and second conductors (22a, 22b) may provide compliant coupling regions for the socket (14). The contact regions (24) of the first bus conductor (22a) may be positioned within the socket (14) so as to contact a lead disposed on a first side of a circuit element (16) and the contact regions (24) of the second bus conductor (22b) may be positioned within the socket (14) so as to contact the lead disposed on the second side of the circuit element (16).