Patents by Inventor John D. Porter
John D. Porter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8649207Abstract: The present disclosure includes devices and methods for operating resistance variable memory. One device embodiment includes an array of memory cells wherein a number of the cells are commonly coupled to a select line, the number cells including a number of data cells programmable within a number of target threshold resistance (Rt) ranges which correspond to a number of data states, and a number of reference cells interleaved with the data cells and programmable within the number of target Rt ranges. The aforementioned device embodiment also includes control circuitry coupled to the array and configured to sense a level associated with at least one data cell and at least one reference cell, and compare the sensed level associated with the at least one data cell with the sensed level associated with the at least one reference cell to determine a data state of the at least one data cell.Type: GrantFiled: September 14, 2012Date of Patent: February 11, 2014Assignee: Micron Technology, Inc.Inventors: Pradeep Ramani, John D. Porter
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Patent number: 8587984Abstract: The present disclosure includes devices and methods for operating resistance variable memory. One device embodiment includes an array of memory cells wherein a number of the cells are commonly coupled to a select line, the number cells including a number of data cells programmable within a number of target threshold resistance (Rt) ranges which correspond to a number of data states, and a number of reference cells interleaved with the data cells and programmable within the number of target Rt ranges. The aforementioned device embodiment also includes control circuitry coupled to the array and configured to sense a level associated with at least one data cell and at least one reference cell, and compare the sensed level associated with the at least one data cell with the sensed level associated with the at least one reference cell to determine a data state of the at least one data cell.Type: GrantFiled: July 30, 2010Date of Patent: November 19, 2013Assignee: Micron Technology, Inc.Inventors: Pradeep Ramani, John D. Porter
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Patent number: 8559218Abstract: Devices, methods, and systems for temperature compensation in memory devices, such as resistance variable memory, among other types of memory are included. One or more embodiments can include a memory device including a table with an output that is used to create a multiplication factor for a current to compensate for temperature changes in the memory device, where the output depends on an operating temperature of the memory device and a difference in the current between a highest specified operating temperature and a lowest specified operating temperature of the memory device.Type: GrantFiled: May 5, 2011Date of Patent: October 15, 2013Assignee: Micron Technology, Inc.Inventors: John D. Porter, Jennifer E. Taylor
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Patent number: 8406027Abstract: The present disclosure includes devices, methods, and systems for programming memory, such as resistance variable memory. One embodiment can include an array of resistance variable memory cells, wherein the resistance variable memory cells are coupled to one or more data lines, a row decoder connected to a first side of the array, a column decoder connected to a second side of the array, wherein the second side is adjacent to the first side, a gap located adjacent to the row decoder and the column decoder, and clamp circuitry configured to control a reverse bias voltage associated with one or more unselected memory cells during a programming operation, wherein the clamp circuitry is located in the gap and is selectively coupled to the one or more data lines.Type: GrantFiled: August 16, 2011Date of Patent: March 26, 2013Assignee: Micron Technology, Inc.Inventor: John D. Porter
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Patent number: 8395837Abstract: A releasing and post-releasing method for making a micromirror device and a micromirror array device are disclosed herein. The releasing method removes the sacrificial materials in the micromirror and micromirror array so as to enabling movements of the movable elements in the micromirror and micromirror array device. The post-releasing method is applied to improve the performance and quality of the released micromirrors and micromirror array devices.Type: GrantFiled: April 12, 2007Date of Patent: March 12, 2013Assignee: Texas Instruments IncorporatedInventors: Hongqin Shi, Gregory Schaadt, James C. Dunphy, Dmitri Simonian, John D. Porter
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Patent number: 8363500Abstract: Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.Type: GrantFiled: June 13, 2011Date of Patent: January 29, 2013Assignee: Micron Technology, Inc.Inventors: Jennifer Taylor, John D. Porter
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Publication number: 20130010528Abstract: The present disclosure includes devices and methods for operating resistance variable memory. One device embodiment includes an array of memory cells wherein a number of the cells are commonly coupled to a select line, the number cells including a number of data cells programmable within a number of target threshold resistance (Rt) ranges which correspond to a number of data states, and a number of reference cells interleaved with the data cells and programmable within the number of target Rt ranges. The aforementioned device embodiment also includes control circuitry coupled to the array and configured to sense a level associated with at least one data cell and at least one reference cell, and compare the sensed level associated with the at least one data cell with the sensed level associated with the at least one reference cell to determine a data state of the at least one data cell.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Pradeep Ramani, John D. Porter
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Publication number: 20130010524Abstract: Methods, and circuits, are disclosed for operating a programmable memory device. One method embodiment includes storing a value as a state in a first memory cell and as a complementary state in a second memory cell. Such a method further includes determining the state of the first memory cell using a first self-biased sensing circuit and the complementary state of the second memory cell using a second self-biased sensing circuit, and comparing in a differential manner an indication of the state of the first memory cell to a reference indication of the complementary state of the second memory cell to determine the value.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: MICRON TECHNOLOGY, INC.Inventor: John D. PORTER
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Patent number: 8351246Abstract: Methods, and circuits, are disclosed for operating a programmable memory device. One method embodiment includes storing a value as a state in a first memory cell and as a complementary state in a second memory cell. Such a method further includes determining the state of the first memory cell using a first self-biased sensing circuit and the complementary state of the second memory cell using a second self-biased sensing circuit, and comparing in a differential manner an indication of the state of the first memory cell to a reference indication of the complementary state of the second memory cell to determine the value.Type: GrantFiled: December 22, 2011Date of Patent: January 8, 2013Assignee: Micron Technology, Inc.Inventor: John D. Porter
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Publication number: 20120287732Abstract: Apparatus and methods for driving a signal are disclosed. An example apparatus includes a pre-driver circuit and a driver circuit. The pre-driver circuit includes a step-down transistor and the driver circuit includes a pull-down transistor configured to be coupled to a reference voltage. In a first mode, the step-down transistor is configured to reduce a voltage provided to the pull-down transistor to less than a supply voltage, and in a second mode, the step-down transistor configured to provide the voltage of the supply voltage to the pull-down transistor. The pre-driver circuit of the example signal driver circuit may further include a step-up transistor configured to increase a voltage provided to a pull-up transistor of the driver circuit to greater than the reference voltage, and in the second mode, the step-up transistor configured to provide the voltage of the reference voltage to the pull-up transistor.Type: ApplicationFiled: May 12, 2011Publication date: November 15, 2012Applicant: Micron Technology, Inc.Inventors: Gi-Hong Kim, John D. Porter
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Patent number: 8233318Abstract: The present disclosure includes devices and methods for operating resistance variable memory cells. One or more embodiments include applying a programming signal to a resistance variable material of a memory cell, and decreasing a magnitude of a trailing portion of the applied programming signal successively according to a number of particular decrements. The magnitude and the duration of the number of particular decrements correspond to particular programmed values.Type: GrantFiled: April 20, 2010Date of Patent: July 31, 2012Assignee: Micron Technology, Inc.Inventors: Pradeep Ramani, John D. Porter
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Publication number: 20120184067Abstract: A releasing and post-releasing method for making a micromirror device and a micromirror array device are disclosed herein. The releasing method removes the sacrificial materials in the micromirror and micromirror array so as to enabling movements of the movable elements in the micromirror and micromirror array device. The post-releasing method is applied to improve the performance and quality of the released micromirrors and micromirror array devices.Type: ApplicationFiled: April 12, 2007Publication date: July 19, 2012Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Hongqin Shi, Gregory Schaadt, James C. Dunphy, Dmitri Simonian, John D. Porter
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Patent number: 8194475Abstract: The present disclosure includes devices and methods for sensing resistance variable memory cells. One device embodiment includes at least one resistance variable memory cell, and a capacitive divider configured to generate multiple reference levels in association with the at least one resistance variable memory cell.Type: GrantFiled: April 29, 2010Date of Patent: June 5, 2012Assignee: Micron Technology, Inc.Inventors: Jennifer E. Taylor, John D. Porter
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Publication number: 20120092941Abstract: Methods, and circuits, are disclosed for operating a programmable memory device. One method embodiment includes storing a value as a state in a first memory cell and as a complementary state in a second memory cell. Such a method further includes determining the state of the first memory cell using a first self-biased sensing circuit and the complementary state of the second memory cell using a second self-biased sensing circuit, and comparing in a differential manner an indication of the state of the first memory cell to a reference indication of the complementary state of the second memory cell to determine the value.Type: ApplicationFiled: December 22, 2011Publication date: April 19, 2012Applicant: MICRON TECHNOLOGY, INC.Inventor: John D. Porter
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Patent number: 8089800Abstract: Methods, and circuits, are disclosed for operating a programmable memory device. One method embodiment includes storing a value as a state in a first memory cell and as a complementary state in a second memory cell. Such a method further includes determining the state of the first memory cell using a first self-biased sensing circuit and the complementary state of the second memory cell using a second self-biased sensing circuit, and comparing in a differential manner an indication of the state of the first memory cell to a reference indication of the complementary state of the second memory cell to determine the value.Type: GrantFiled: October 12, 2010Date of Patent: January 3, 2012Assignee: Micron Technology, Inc.Inventor: John D. Porter
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Publication number: 20110317473Abstract: The present disclosure includes devices, methods, and systems for programming memory, such as resistance variable memory. One embodiment can include an array of resistance variable memory cells, wherein the resistance variable memory cells are coupled to one or more data lines, a row decoder connected to a first side of the array, a column decoder connected to a second side of the array, wherein the second side is adjacent to the first side, a gap located adjacent to the row decoder and the column decoder, and clamp circuitry configured to control a reverse bias voltage associated with one or more unselected memory cells during a programming operation, wherein the clamp circuitry is located in the gap and is selectively coupled to the one or more data lines.Type: ApplicationFiled: August 16, 2011Publication date: December 29, 2011Applicant: MICRON TECHNOLOGY, INC.Inventor: John D. Porter
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Publication number: 20110310661Abstract: The present disclosure includes devices, methods, and systems for sensing memory, such as resistance variable memory, among other types of memory. One or more embodiments can include a method for generating currents to be used in sensing a memory cell, the method including providing a number of initial currents, and generating a number of reference currents by summing particular combinations of the initial currents.Type: ApplicationFiled: August 30, 2011Publication date: December 22, 2011Applicant: MICRON TECHNOLOGY, INC.Inventors: Jennifer E. Taylor, John D. Porter
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Publication number: 20110242878Abstract: Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.Type: ApplicationFiled: June 13, 2011Publication date: October 6, 2011Applicant: MICRON TECHNOLOGY, INS.Inventors: Jennifer Taylor, John D. Porter
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Patent number: 8009487Abstract: The present disclosure includes devices, methods, and systems for programming memory, such as resistance variable memory. One embodiment can include an array of resistance variable memory cells, wherein the resistance variable memory cells are coupled to one or more data lines, a row decoder connected to a first side of the array, a column decoder connected to a second side of the array, wherein the second side is adjacent to the first side, a gap located adjacent to the row decoder and the column decoder, and clamp circuitry configured to control a reverse bias voltage associated with one or more unselected memory cells during a programming operation, wherein the clamp circuitry is located in the gap and is selectively coupled to the one or more data lines.Type: GrantFiled: March 10, 2010Date of Patent: August 30, 2011Assignee: Micron Technology, Inc.Inventor: John D. Porter
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Publication number: 20110205791Abstract: The present disclosure includes devices, methods, and systems for temperature compensation in memory devices, such as resistance variable memory, among other types of memory. One or more embodiments can include a memory device including a table with an output that is used to create a multiplication factor for a current to compensate for temperature changes in the memory device, where the output depends on an operating temperature of the memory device and a difference in the current between a highest specified operating temperature and a lowest specified operating temperature of the memory device.Type: ApplicationFiled: May 5, 2011Publication date: August 25, 2011Applicant: MICRON TECHNOLOGY, INC.Inventors: John D. Porter, Jennifer E. Taylor