Abstract: A method for forming front contacts on a silicon solar cell which includes texture etching the front surface of the solar cell, forming an antireflective layer over the face, diffusing a doping material into the face to form a heavily doped region in valleys formed during the texture-etching of the face, depositing an electrically conductive material on the heavily doped regions in the valleys and annealing the solar cell.

Abstract: A method for forming front contacts on a silicon solar cell which includes texture etching the front surface of the solar cell, forming an antireflective layer over the face, diffusing a doping material into the face to form a heavily doped region in valleys formed during the texture-etching of the face, depositing an electrically conductive material on the heavily doped regions in the valleys and annealing the solar cell.

Abstract: Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

Abstract: The present invention teaches a method for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer. The barrier layer may include a refractory metal and/or a group 8, 9 or 10 metal. The method includes cathodically pre-treating the substrate in an acid-containing solution. The substrate is then placed into a copper solution (pH?7.0) that includes complexed copper ions and a current or bias is applied across the substrate surface. The complexed copper ions are reduced to deposit a copper seed layer onto the barrier layer. In one aspect, a complex alkaline bath is then used to electrochemically plate a gapfill layer on the substrate surface, followed by overfill in the same bath. In another aspect, an acidic bath ECP gapfill process and overfill process follow the alkaline seed layer process.

Abstract: Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

Abstract: A method and apparatus for plating a conductive material onto a substrate is provided. The apparatus includes a fluid processing cell having a fluid basin configured to contain an electrolyte solution and having an opening configured to receive a substrate for processing, an anode assembly positioned in the fluid basin, and a collimator positioned in the fluid basin between the anode assembly and the opening.

Abstract: A process is described for the fabrication of submicton interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of CU electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.

Abstract: A fluid processing cell for depositing a conductive layer onto a substrate is provided. The cell includes a catholyte solution fluid volume positioned to receive a substrate for plating, a first anolyte solution fluid volume at least partially ionically separated from the catholyte solution fluid volume, an anode assembly positioned in the first anolyte solution fluid volume, a second anolyte solution fluid volume, the second anolyte solution fluid volume being electrically isolated from the first anode solution fluid volume and at least partially in ionic communication with the cathode solution fluid volume, and a cathode counter electrode positioned in the second anolyte solution volume.

Abstract: A contact ring for an electrochemical plating system is provided. The contact ring includes an annular substrate supporting member, a plurality of radially positioned conductive substrate contact pins extending from the substrate supporting member, an annular conductive thief element attached to the substrate supporting member, and at least one source of electrical power in electrical communication with the contact pins and the conductive thief element.

Abstract: In one example, an apparatus for dispensing copper into a plating solution is provided which includes a cartridge containing an inlet and an outlet and comprising a copper metal source therein, a dosing device containing an oxidizing agent in fluid communication with the inlet, a tank for containing the plating solution in fluid communication with the outlet, a pH electrode adapted to contact the plating solution, and a system controller which receives input from the pH electrode and sends output to the dosing device.

Abstract: A method and apparatus for plating a metal layer onto a substrate is provided. The plating apparatus includes two or more segments of an anode and an auxiliary electrode. The plating method includes a first stage of plating a thin metal seed uniformly in the center of the substrate and near the edges of the substrate before metal gap filling and bulk metal plating are performed. The thin metal seed is plated on the substrate surface by applying a current pulse provided by a first power supply and a second power supply which are in electrical communication in reverse polarity with one segment of the anode and the auxiliary electrode. Thereafter, gap filling of features is performed by applying a second current pulse where current is provided to all segments of the anode.