Abstract: A dampener configured to augment the mounting of a lamp in a socket by resisting displacement of the lamp relative to the socket. The dampener is made from a material able to absorb vibrations and to reduce or prevent vibrations in the lamp. The dampener is made in one piece or more pieces, wherein each piece is interposable in whole or in part between the socket and the lamp base to insulate the lamp in whole or part against the vibration translated through the socket or surrounding air.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Abstract: The present invention relates to methods and kits for nucleic acid detection in an assay system.

Abstract: The invention relates to radiation curable compositions comprising a liquid 0/s(acyl)phosphine photo initiators of formula (I): wherein each of Ar1, Ar2 and Ar3 is independently a substituted or unsubstituted aryl group. The invention also relates to stabilized forms of liquid bis(acyl)phosphines of formula (I) and radiation curable composition comprising said stabilized photoinitiators. The radiation curable compositions are selected from the group consisting of an optical fiber coating composition and a coating composition capable of radiation cure on concrete and a coating composition capable of radiation cure on metal.

Abstract: The invention relates to radiation curable compositions comprising a liquid 0/s(acyl)phosphine photo initiators of formula (Ï): wherein each of Ar1, Ar2 and Ar3 is independently a substituted or unsubstituted aryl group. The invention also relates to stabilized forms of liquid bis(acyl)phosphines of formula (I) and radiation curable composition comprising said stabilized photoinitiators. The radiation curable compositions are selected from the group consisting of an optical fiber coating composition and a coating composition capable of radiation cure on concrete and a coating composition capable of radiation cure on metal.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: A method and apparatus for additive fabrication which provides a substrate which helps the newly hardened resin layer to separate from the substrate while providing a substrate of appropriate strength and durability. In an embodiment, the substrate is a multi-layer substrate comprising a transport layer and a structural layer, the transport layer comprising a polyolefin or a fluoropolymer, and the structural layer comprising a semi-crystal line thermoplastic polymer.

Abstract: A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer.

Abstract: A light emitter package having increased feature sizes for improved luminous flux and efficacy. An emitter chip is disposed on a submount with a lens that covers the emitter chip. In some cases, the ratio of the width of the light emitter chip to the width of said lens in a given direction is 0.5 or greater. Increased feature sizes allow the package to emit light more efficiently. Some packages include submounts having square dimensions greater than 3.5 mm used in conjunction with larger emitter chips. Materials having higher thermal conductivities are used to fabricate the submounts, providing the package with better thermal management.

Abstract: Light emitter components, systems, and related methods having improved optical efficiency and a lower manufacturing cost are disclosed. In one aspect, a light emitter component can include a substrate having an elongated body and first and second ends. At least a first trace and a second trace can be provided on the substrate. In some aspects, the first trace can be disposed proximate the first end of the substrate and the second trace can be disposed proximate the second end of the substrate, with no other portion of the first trace or second trace being disposed between the first and second ends of the substrate. In some aspects, a string of LED chips can be provided on the substrate. The string of LED chips can be disposed between the first and second ends of the substrate. Angled traces, gaps and light emitter components can also be provided in some aspects.

Abstract: A submount for a light emitting device package includes a substrate with a first bond pad and a second bond pad on a first surface. The first bond pad includes a die attach region offset toward a first end of the substrate and configured to receive a light emitting diode. The second bond pad includes a bonding region between the first bond pad and the second end of the substrate and a second bond pad extension that extends from the bonding region along a side of the substrate toward a corner of the substrate at the first end of the substrate. First and second solder pads are on the second surface of the substrate. The first solder pad is adjacent the first end of the substrate and contacts the second bond pad. The second solder pad is adjacent the second end of the substrate and contacts the first bond pad.

Abstract: This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.

Abstract: A submount for a light emitting device package includes a substrate. A first bond pad and a second bond pad are on a first surface of the substrate. The first bond pad includes a die attach region offset toward a first end of the substrate and configured to receive a light emitting diode thereon. The second bond pad includes a bonding region between the first bond pad and the second end of the substrate and a second bond pad extension that extends from the bonding region along a side of the substrate toward a corner of the substrate at the first end of the substrate. First and second solder pads are a the second surface of the substrate. The first solder pad is adjacent the first end of the substrate and contacts the second bond pad. The second solder pad is adjacent the second end of the substrate and contacts the first bond pad. Related LED packages and methods of forming LED packages are disclosed.

Abstract: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror, such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region.

Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.

Abstract: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.