Patents by Inventor John L. Gustafson

John L. Gustafson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170018364
    Abstract: Methods and systems to improve a multilayer ceramic capacitor using additive manufacturing are disclosed. Layers of a capacitor may be modified from its traditional planar shape to a wavy structure. The wavy shape increases surface area within a fixed volume of the capacitor, thus increasing capacitance, and may comprise smooth and repetitive oscillations without the presence of voltage-degrading sharp corners. In addition, the ends of each conductive layer do not have sharp edges, such as comprising of a round corner. The one-dimensional wave pattern may run parallel to the width of the capacitor, or it may align in parallel to the length of the capacitor. In some embodiments, the wave pattern may be parallel to both the width and the length—in two dimensions—such that it forms an egg-crate shape. Further, the wavy structures may comprise of secondary or tertiary wavy structures to further increase surface area.
    Type: Application
    Filed: July 18, 2016
    Publication date: January 19, 2017
    Inventor: John L. Gustafson
  • Publication number: 20170018365
    Abstract: Methods and systems to improve a multilayer ceramic capacitor using additive manufacturing are disclosed. Conductive layer ends and dielectric layer edges of a multilayer ceramic capacitor may be modified to comprise a round shape, which may increase voltage limits by reducing electric field intensity that results from sharp corners. Further, the capacitor may comprise wave-like structures to increase surface area of a conductive layer and/or dielectric layer. The round shape of the conductive layer end may in-part reduce the need for a wide protective gap due to its dome-shape permitting the dielectric layer to be wider on top and bottom, and thinner at the center, e.g. concave, which provides strength support to the layers. The 3D Printing process permits the distance between the conductive layer end of the conductive layer to be much closer to the dielectric layer edge of the dielectric layer, such as below the standard 500 microns.
    Type: Application
    Filed: August 30, 2016
    Publication date: January 19, 2017
    Inventor: John L. Gustafson
  • Publication number: 20160329163
    Abstract: In one embodiment of the invention, a method of forming an energy storage device is described in which a porous structure of an electrically conductive substrate is measured in-situ while being electrochemically etched in an electrochemical etching bath until a predetermined value is obtained, at which point the electrically conductive substrate may be removed from the electrochemical etching bath. In another embodiment, a method of forming an energy storage device is described in which an electrically conductive porous structure is measured to determine the energy storage capacity of the electrically conductive porous structure. The energy storage capacity of the electrically conductive porous structure is then reduced until a predetermined energy storage capacity value is obtained.
    Type: Application
    Filed: March 9, 2016
    Publication date: November 10, 2016
    Inventors: Eric C. Hannah, Cary L. Pint, Charles W. Holzwarth, John L. Gustafson
  • Publication number: 20160268065
    Abstract: In one embodiment a charge storage device includes first (110) and second (120) electrically conductive structures separated from each other by a separator (130). At least one of the first and second electrically conductive structures includes a porous structure containing multiple channels (111, 121). Each one of the channels has an opening (112, 122) to a surface (115, 125) of the porous structure. In another embodiment the charge storage device includes multiple nanostructures (610) and an electrolyte (650) in physical contact with at least some of the nanostructures. A material (615) having a dielectric constant of at least 3.9 may be located between the electrolyte and the nanostructures.
    Type: Application
    Filed: May 25, 2016
    Publication date: September 15, 2016
    Applicant: Intel Corporation
    Inventors: Donald S. Gardner, Eric C. Hannah, Rong Chen, John L. Gustafson
  • Patent number: 9409767
    Abstract: An energy storage structure includes an energy storage device containing at least one porous structure (110, 120, 510, 1010) that contains multiple channels (111, 121), each one of which has an opening (112, 122) to a surface (115, 116, 515, 516, 1015, 1116) of the porous structure, and further includes a support structure (102, 402, 502, 1002) for the energy storage device. In a particular embodiment, the porous structure and the support structure are both formed from a first material, and the support structure physically contacts a first portion (513, 813, 1213) of the energy storage device and exposes a second portion (514, 814, 1214) of the energy storage device.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: August 9, 2016
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Zhaohui Chen, Wei C. Jin, Eric C. Hannah, John L. Gustafson, Tomm V. Aldridge
  • Patent number: 9299505
    Abstract: In one embodiment of the invention, a method of forming an energy storage device is described in which a porous structure of an electrically conductive substrate is measured in-situ while being electrochemically etched in an electrochemical etching bath until a predetermined value is obtained, at which point the electrically conductive substrate may be removed from the electrochemical etching bath. In another embodiment, a method of forming an energy storage device is described in which an electrically conductive porous structure is measured to determine the energy storage capacity of the electrically conductive porous structure. The energy storage capacity of the electrically conductive porous structure is then reduced until a predetermined energy storage capacity value is obtained.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: March 29, 2016
    Assignee: Intel Corporation
    Inventors: Eric C. Hannah, Cary L. Pint, Charles W. Holzwarth, John L. Gustafson
  • Patent number: 9245695
    Abstract: In an embodiment of the invention, an energy storage device is described including a pair of electrically conductive porous structures, with each of the electrically conductive porous structures containing an electrolyte loaded into a plurality of pores. A solid or semi-solid electrolyte layer separates the pair of electrically conductive porous structures and penetrates the plurality of pores of the pair of electrically conductive porous structures. In an embodiment of the invention, an electrically conductive porous structure is formed on a substrate, the electrically conductive porous structure containing a plurality of pores. An electrolyte is then loaded into the plurality of pores, and an electrolyte layer is formed over the electrically conductive porous structure. In an embodiment, the electrolyte layer penetrates the plurality of pores of the electrically conductive porous structure.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: January 26, 2016
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Cary L. Pint, Charles W. Holzwarth, Wei Jin, Zhaohui Chen, John L. Gustafson
  • Patent number: 9223544
    Abstract: A method, device and system for representing numbers in a computer including storing a floating-point number M in a computer memory; representing the floating-point number M as an interval with lower and upper bounds A and B when it is accessed by using at least two floating-point numbers in the memory; and then representing M as an interval with lower and upper bounds A and B when it is used in a calculation by using at least three floating-point numbers in the memory. Calculations are performed using the interval and when the data is written back to the memory it may be stored as an interval if the size of the interval is significant, i.e. larger than a first threshold value. A warning regarding the suspect accuracy of any data stored as an interval may be issued if the interval is too large, i.e. larger than a second threshold value.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: December 29, 2015
    Assignee: Intel Corporation
    Inventors: Helia Naeimi, Ralph Nathan, Shih-Lien L. Lu, John L. Gustafson
  • Publication number: 20150370322
    Abstract: The present disclosure presents methods and apparatuses for operating a multi-display device to mitigate the effects of image interruption due to bezels between individual display devices. For example, a method of operating a video device includes generating a bezel-corrected image which spans a plurality of display devices, the bezel-corrected image including masked image pixels, wherein the masked image pixels are associated with a bezel of at least one of the plurality of display devices. Such example methods may further include detecting a head position change of a user and displaying one or more of the masked image pixels on at least one of the plurality of display devices based on the head position change.
    Type: Application
    Filed: June 18, 2014
    Publication date: December 24, 2015
    Inventor: John L. Gustafson
  • Patent number: 9093226
    Abstract: An energy storage device includes a first electrode (110, 510) including a first plurality of channels (111, 512) that contain a first electrolyte (150, 514) and a second electrode (120, 520) including a second plurality of channels (121, 522) that contain a second electrolyte (524). The first electrode has a first surface (115, 511) and the second electrode has a second surface (125, 521). At least one of the first and second electrodes is a porous silicon electrode, and at least one of the first and second surfaces comprises a passivating layer (535).
    Type: Grant
    Filed: September 17, 2012
    Date of Patent: July 28, 2015
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Wei Jin, Zhaohui Chen, Charles W. Holzwarth, Cary L. Pint, Bum Ki Moon, John L. Gustafson
  • Patent number: 9013861
    Abstract: In one embodiment a charge storage device includes first (110) and second (120) electrically conductive structures separated from each other by a separator (130). At least one of the first and second electrically conductive structures includes a porous structure containing multiple channels (111, 121). Each one of the channels has an opening (112, 122) to a surface (115, 125) of the porous structure. In another embodiment the charge storage device includes multiple nanostructures (610) and an electrolyte (650) in physical contact with at least some of the nanostructures. A material (615) having a dielectric constant of at least 3.9 may be located between the electrolyte and the nanostructures.
    Type: Grant
    Filed: April 2, 2010
    Date of Patent: April 21, 2015
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Eric C. Hannah, Rong Chen, John L. Gustafson
  • Publication number: 20150049414
    Abstract: An energy storage device includes a middle section (610) including a plurality of double-sided porous structures (500), each of which contain multiple channels (511) in two opposing surfaces (515, 525) thereof, an upper section (620) comprising a single-sided porous structure (621) containing multiple channels (622) in a surface (625) thereof, and a lower section (630) including a single-sided porous structure (631) containing multiple channels (632) in a surface (635) thereof.
    Type: Application
    Filed: February 21, 2012
    Publication date: February 19, 2015
    Inventors: Donald S. Gardner, Tomm V. Aldridge, Charles W. Holzwarth, Cary L. Pint, Zhaohui Chen, Wei C. Jin, Yang Liu, John L. Gustafson
  • Publication number: 20140233152
    Abstract: Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.
    Type: Application
    Filed: December 27, 2011
    Publication date: August 21, 2014
    Inventors: Donald S. Gardner, Cary L. Pint, Charles W. Holzwarth, Wei Jin, Zhaohui Chen, Yang Liu, Eric C. Hannah, John L. Gustafson
  • Publication number: 20140226260
    Abstract: In an embodiment of the invention, an energy storage device is described including a pair of electrically conductive porous structures, with each of the electrically conductive porous structures containing an electrolyte loaded into a plurality of pores. A solid or semi-solid electrolyte layer separates the pair of electrically conductive porous structures and penetrates the plurality of pores of the pair of electrically conductive porous structures. In an embodiment of the invention, an electrically conductive porous structure is formed on a substrate, the electrically conductive porous structure containing a plurality of pores. An electrolyte is then loaded into the plurality of pores, and an electrolyte layer is formed over the electrically conductive porous structure. In an embodiment, the electrolyte layer penetrates the plurality of pores of the electrically conductive porous structure.
    Type: Application
    Filed: December 21, 2011
    Publication date: August 14, 2014
    Inventors: Donald S. Gardner, Cary L. Pint, Charles W. Holzwarth, Wei Jin, Zhaohui Chen, John L. Gustafson
  • Publication number: 20140078644
    Abstract: An energy storage device includes a first electrode (110, 510) including a first plurality of channels (111, 512) that contain a first electrolyte (150, 514) and a second electrode (120, 520) including a second plurality of channels (121, 522) that contain a second electrolyte (524). The first electrode has a first surface (115, 511) and the second electrode has a second surface (125, 521). At least one of the first and second electrodes is a porous silicon electrode, and at least one of the first and second surfaces comprises a passivating layer (535).
    Type: Application
    Filed: September 17, 2012
    Publication date: March 20, 2014
    Inventors: Donald S. Gardner, Wei Jin, Zhaohui Chen, Charles W. Holzwarth, Cary L. Pint, Bum Ki Moon, John L. Gustafson
  • Publication number: 20140074902
    Abstract: A method, device and system for representing numbers in a computer including storing a floating-point number M in a computer memory; representing the floating-point number M as an interval with lower and upper bounds A and B when it is accessed by using at least two floating-point numbers in the memory; and then representing M as an interval with lower and upper bounds A and B when it is used in a calculation by using at least three floating-point numbers in the memory. Calculations are performed using the interval and when the data is written back to the memory it may be stored as an interval if the size of the interval is significant, i.e. larger than a first threshold value. A warning regarding the suspect accuracy of any data stored as an interval may be issued if the interval is too large, i.e. larger than a second threshold value.
    Type: Application
    Filed: September 7, 2012
    Publication date: March 13, 2014
    Applicant: INTEL CORPORATION
    Inventors: Helia NAEIMI, Ralph NATHAN, Shih-Lien L. LU, John L. GUSTAFSON
  • Publication number: 20140036412
    Abstract: In one embodiment of the invention, a method of forming an energy storage device is described in which a porous structure of an electrically conductive substrate is measured in-situ while being electrochemically etched in an electrochemical etching bath until a predetermined value is obtained, at which point the electrically conductive substrate may be removed from the electrochemical etching bath. In another embodiment, a method of forming an energy storage device is described in which an electrically conductive porous structure is measured to determine the energy storage capacity of the electrically conductive porous structure. The energy storage capacity of the electrically conductive porous structure is then reduced until a predetermined energy storage capacity value is obtained.
    Type: Application
    Filed: December 14, 2011
    Publication date: February 6, 2014
    Inventors: Eric C. Hannah, Cary L. Pint, Charles W. Holzwarth, John L. Gustafson
  • Publication number: 20130279137
    Abstract: An energy storage structure includes an energy storage device containing at least one porous structure (110, 120, 510, 1010) that contains multiple channels (111, 121), each one of which has an opening (112, 122) to a surface (115, 116, 515, 516, 1015, 1116) of the porous structure, and further includes a support structure (102, 402, 502, 1002) for the energy storage device. In a particular embodiment, the porous structure and the support structure are both formed from a first material, and the support structure physically contacts a first portion (513, 813, 1213) of the energy storage device and exposes a second portion (514, 814, 1214) of the energy storage device.
    Type: Application
    Filed: November 3, 2011
    Publication date: October 24, 2013
    Inventors: Donald S. Gardner, Zhaohui Chen, Wei C. Jin, Eric C. Hannah, John L. Gustafson, Tomm V. Aldridge
  • Publication number: 20130273261
    Abstract: Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.
    Type: Application
    Filed: September 30, 2011
    Publication date: October 17, 2013
    Inventors: Donald S. Gardner, Zhaohui Chen, Wei C. Jin, Scott B. Clendenning, Eric C. Hannah, Tomm V. Aldridge, John L. Gustafson
  • Publication number: 20130016452
    Abstract: In one embodiment a charge storage device includes first (110) and second (120) electrically conductive structures separated from each other by a separator (130). At least one of the first and second electrically conductive structures includes a porous structure containing multiple channels (111, 121). Each one of the channels has an opening (112, 122) to a surface (115, 125) of the porous structure. In another embodiment the charge storage device includes multiple nanostructures (610) and an electrolyte (650) in physical contact with at least some of the nanostructures. A material (615) having a dielectric constant of at least 3.9 may be located between the electrolyte and the nanostructures.
    Type: Application
    Filed: April 2, 2010
    Publication date: January 17, 2013
    Applicant: INTEL CORPORATION
    Inventors: Donald S. Gardner, Eric C. Hannah, Rong Chen, John L. Gustafson