Abstract: Examples described herein relate to a management system that determines which services to redeploy on one or more platforms. A platform can receive a configuration to perform during a failure of connectivity with a management system. The platform can monitor activity of one or more services. The platform can, based on failure of connectivity with the management system and recovery of connectivity with the management system, provide the monitored activity of one or more services to the management system to influence services re-deployed by the management system. In some examples, based on failure to re-establish a connection with the management system within an amount of time, the platform can connect with the management system using a secondary management interface.

Abstract: The present application provides fibronectin based scaffold proteins associated with improved stability. The application also relates to stable formulations of fibronectin based scaffold proteins and the use thereof in diagnostic, research and therapeutic applications. The application further relates to cells comprising such proteins, polynucleotides encoding such proteins or fragments thereof, and to vectors comprising such polynucleotides.

Abstract: The present application provides fibronectin based scaffold proteins associated with improved stability. The application also relates to stable formulations of fibronectin based scaffold proteins and the use thereof in diagnostic, research and therapeutic applications. The application further relates to cells comprising such proteins, polynucleotides encoding such proteins or fragments thereof, and to vectors comprising such polynucleotides.

Abstract: Examples include a method of determining a first traffic overload protection policy for a first service provided by a first virtual network function in a network of virtual network functions in a computing system and determining a second traffic overload protection policy for a second service provided by a second virtual network function in the network of virtual network functions. The method includes applying the first traffic overload protection policy to the first virtual network function and the second traffic overload protection policy to the second virtual network function, wherein the first traffic overload protection policy and the second traffic overload protection policy are different.

Abstract: Examples described herein relate to a management system that determines which services to redeploy on one or more platforms. A platform can receive a configuration to perform during a failure of connectivity with a management system. The platform can monitor activity of one or more services. The platform can, based on failure of connectivity with the management system and recovery of connectivity with the management system, provide the monitored activity of one or more services to the management system to influence services re-deployed by the management system. In some examples, based on failure to re-establish a connection with the management system within an amount of time, the platform can connect with the management system using a secondary management interface.

Abstract: Examples described herein relate to configuring an interrupt controller to gather zero or more interrupts of a first type and provide the zero or more interrupts of the first type to a first core after a threshold amount of time has elapsed. The interrupt controller is configured to transfer interrupts of a second type to a second core that executes at least one network protocol processing-related task. However, in some examples, the first core can perform any network protocol processing-related task. The first type of interrupts can be associated with faults that are correctable by an interrupt issuer or its delegate. The first core can be configured to perform a corrective action and acknowledge receipt of the group of interrupts or to merely acknowledge receipt of the group of interrupts but not perform a corrective action.

Abstract: A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

Abstract: A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

Abstract: The present application provides fibronectin based scaffold proteins associated with improved stability. The application also relates to stable formulations of fibronectin based scaffold proteins and the use thereof in diagnostic, research and therapeutic applications. The application further relates to cells comprising such proteins, polynucleotides encoding such proteins or fragments thereof, and to vectors comprising such polynucleotides.

Abstract: Examples include a method of determining a first traffic overload protection policy for a first service provided by a first virtual network function in a network of virtual network functions in a computing system and determining a second traffic overload protection policy for a second service provided by a second virtual network function in the network of virtual network functions. The method includes applying the first traffic overload protection policy to the first virtual network function and the second traffic overload protection policy to the second virtual network function, wherein the first traffic overload protection policy and the second traffic overload protection policy are different.

Abstract: The present application provides fibronectin based scaffold proteins associated with improved stability. The application also relates to stable formulations of fibronectin based scaffold proteins and the use thereof in diagnostic, research and therapeutic applications. The application further relates to cells comprising such proteins, polynucleotides encoding such proteins or fragments thereof, and to vectors comprising such polynucleotides.

Abstract: Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer.

Abstract: The present application provides fibronectin based scaffold proteins associated with improved stability. The application also relates to stable formulations of fibronectin based scaffold proteins and the use thereof in diagnostic, research and therapeutic applications. The application further relates to cells comprising such proteins, polynucleotides encoding such proteins or fragments thereof, and to vectors comprising such polynucleotides.

Abstract: The present application provides fibronectin based scaffold proteins associated with improved stability. The application also relates to stable formulations of fibronectin based scaffold proteins and the use thereof in diagnostic, research and therapeutic applications. The application further relates to cells comprising such proteins, polynucleotides encoding such proteins or fragments thereof, and to vectors comprising such polynucleotides.

Abstract: The present disclosure relates to a Silicon Carbide (SiC) semiconductor device having both a high blocking voltage and low on-resistance. In one embodiment, the semiconductor device has a blocking voltage of at least 10 kilovolts (kV) and an on-resistance of less than 10 milli-ohms centimeter squared (m?·cm2) and even more preferably less than 5 m?·cm2. In another embodiment, the semiconductor device has a blocking voltage of at least 15 kV and an on-resistance of less than 15 m?·cm2 and even more preferably less than 7 m?·cm2. In yet another embodiment, the semiconductor device has a blocking voltage of at least 20 kV and an on-resistance of less than 20 m?·cm2 and even more preferably less than 10 m?·cm2. The semiconductor device is preferably, but not necessarily, a thyristor such as a power thyristor, a Bipolar Junction Transistor (BJT), an Insulated Gate Bipolar Transistor (IGBT), or a PIN diode.

Abstract: A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0?X<1 and 0?Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.

Abstract: A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

Abstract: The present application provides fibronectin based scaffold proteins associated with improved stability. The application also relates to stable formulations of fibronectin based scaffold proteins and the use thereof in diagnostic, research and therapeutic applications. The application further relates to cells comprising such proteins, polynucleotides encoding such proteins or fragments thereof, and to vectors comprising such polynucleotides.

Abstract: Parasitic deposits are controlled in a deposition system for depositing a film on a substrate, the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. A deposition system for depositing a film on a substrate using a process gas includes a reaction chamber adapted to receive the substrate and the process gas. The system further includes an interior surface contiguous with the reaction chamber.

Abstract: The present disclosure relates to a Silicon Carbide (SiC) semiconductor device having both a high blocking voltage and low on-resistance. In one embodiment, the semiconductor device has a blocking voltage of at least 10 kilovolts (kV) and an on-resistance of less than 10 milli-ohms centimeter squared (m?·cm2) and even more preferably less than 5 m?·cm2. In another embodiment, the semiconductor device has a blocking voltage of at least 15 kV and an on-resistance of less than 15 m?·cm2 and even more preferably less than 7 m?·cm2. In yet another embodiment, the semiconductor device has a blocking voltage of at least 20 kV and an on-resistance of less than 20 m?·cm2 and even more preferably less than 10 m?·cm2. The semiconductor device is preferably, but not necessarily, a thyristor such as a power thyristor, a Bipolar Junction Transistor (BJT), an Insulated Gate Bipolar Transistor (IGBT), or a PIN diode.