Abstract: A reprogrammable dot product engine ternary content addressable memory (DPE-TCAM) is provided. The DPE-TCAM comprises a TCAM crossbar array comprising a plurality of match lines and a plurality of search lines. Each search line and match line are coupled together by a memory cell. A plurality of search line drivers are configured to apply a voltage signal to the search lines representing bits of a search word. Current sensing circuitry is coupled to the output of the plurality of match lines and configured to sense a current on the match lines, the sensed current indicating whether the search word and a stored word matched and, if not, the degree of mismatch between the two words.

Abstract: A reprogrammable dot product engine ternary content addressable memory (DPE-TCAM) is provided. The DPE-TCAM comprises a TCAM crossbar array comprising a plurality of match lines and a plurality of search lines. Each search line and match line are coupled together by a memory cell. A plurality of search line drivers are configured to apply a voltage signal to the search lines representing bits of a search word. Current sensing circuitry is coupled to the output of the plurality of match lines and configured to sense a current on the match lines, the sensed current indicating whether the search word and a stored word matched and, if not, the degree of mismatch between the two words.

Abstract: A method of computing in memory, the method including inputting a packet including data into a computing memory unit having a control unit, loading the data into at least one computing in memory micro-unit, processing the data in the computing in memory micro-unit, and outputting the processed data. Also, a computing in memory system including a computing in memory unit having a control unit, wherein the computing in memory unit is configured to receive a packet having data and a computing in memory micro-unit disposed in the computing in memory unit, the computing in memory micro-unit having at least one of a memory matrix and a logic elements matrix.

Abstract: Devices and methods are provided, In one aspect, a device for driving a memristor array includes a substrate including a well having a bottom layer, a first wall and a second wall. The substrate is formed of a strained layer of a first semiconductor material. A vertical JFET is formed in the well. The vertical JFET includes a vertical gate region formed in a middle portion of the well with a gate region height less than a depth of the well. A channel region is formed of an epitaxial layer of a second semiconductor wrapped around the vertical gate region. Vertical source regions are formed on both sides of a first end of the vertical gate region, and vertical drain regions are formed on both sides of a second end of the vertical gate region.

Abstract: A content addressable memory (CAM) structure is provided. The CAM comprises a plurality of CAM cells communicatively coupled to processing circuitry. A plurality of threshold switching (TS) memristors are included, each configured to connect to a one of the plurality of CAM cells, with the first end connected to the CAM cell and the second connected to a match line. A discharge transistor is included and configured to discharge any charge on the match line in response to the CAM receiving a command to perform a search.

Abstract: A secondary ternary content-addressable memory (TCAM) is programmed with a new regular expression to be added to a regular expression pattern set. Incoming data strings are processed against a primary TCAM programmed with the regular expression pattern set and against the secondary TCAM in parallel. While the incoming data strings are processed against the primary TCAM and against the secondary TCAM in parallel, the regular expression pattern set is updated to add the new regular expression.

Abstract: A content addressable memory (CAM) structure is provided. The CAM comprises a plurality of CAM cells communicatively coupled to processing circuitry. A plurality of threshold switching (TS) memristors are included, each configured to connect to a one of the plurality of CAM cells, with the first end connected to the CAM cell and the second connected to a match line. A discharge transistor is included and configured to discharge any charge on the match line in response to the CAM receiving a command to perform a search.

Abstract: A fault-tolerant analog computing device includes a crossbar array having a number l rows and a number n columns intersecting the l rows to form l×n memory locations. The l rows of the crossbar array receive an input signal as a vector of length l. The n columns output an output signal as a vector of length n that is a dot product of the input signal and the matrix values defined in the l×n memory locations. Each memory location is programmed with a matrix value. A first set of k columns of the n columns is programmed with continuous analog target matrix values with which the input signal is to be multiplied, where k<n. A second set of m columns of the n columns is programmed with continuous analog matrix values for detecting an error in the output signal that exceeds a threshold error value, where m<n.

Abstract: An analog content addressable memory cell includes a high side and a low side. The high side encodes a high bound on a range of values and includes a first voltage divider formed of a first programmable resistor and a first electronically controlled variable resistor. The low side encodes a low bound on the range of values and includes a second voltage divider formed of a second programmable resistor and a second electronically controlled variable resistor.

Abstract: Systems and methods are provided for processing an optical signal. An example system may include a source disposed on a substrate and capable of emitting the optical signal. A first waveguide is formed in the substrate to receive the optical signal. A first coupler is disposed on the substrate to receive a reflected portion of the optical signal. A second waveguide is formed in the substrate to receive the reflected portion from the first coupler. A second coupler is formed in the substrate to mix the optical signal and the reflected portion to form a mixed signal. Photodetectors are formed in the substrate to convert the mixed signal to an electrical signal. A processor is electrically coupled to the substrate and programmed to convert the electrical signal from a time domain to a frequency domain to determine a phase difference between the optical signal and the reflected portion.

Abstract: Filters are represented as k-SAT solutions. A filter query includes a k-SAT clause having literals pertaining to variables. A ternary content-addressable memory (TCAM) has cells programmed in correspondence with the k-SAT solutions. Input column lines of the TCAM that correspond to variables to which the literals of the k-SAT clause pertain are set in accordance with inversions of the literals. Input column lines of the TCAM that correspond to variables to which no literal of the k-SAT clause pertains are set in accordance with a “don't care” state. Responsive to any output match row line of the TCAM being set, the filter query is indicated as failing to satisfy the filters. Responsive to no output match row line of the TCAM being set, the filter query is indicated as satisfying the filters.

Abstract: Systems, devices, and methods are provided for implementing a low power and area ternary content addressable memory (TCAM). The TCAM comprises a plurality of memristor-based TCAM (mTCAM) cells, each consisting of two memristors and two transistors. The first and second memristors are connected in series, with a first end of the first memristor connected to a first data line, first end of the second memristor connected to a second data line, and the second ends of the resistors connected together at a common node. The drain of a programming transistor is connected to the common node, with the source connected to a third data line, and the gate connected to a word line. Common node is further connected to the gate of a match-line transistor, such that if a mismatch is detected common node applies a voltage to the gate to pull-down the voltage on a pre-charged match line.

Abstract: A method of computing in memory, the method including inputting a packet including data into a computing memory unit having a control unit, loading the data into at least one computing in memory micro-unit, processing the data in the computing in memory micro-unit, and outputting the processed data. Also, a computing in memory system including a computing in memory unit having a control unit, wherein the computing in memory unit is configured to receive a packet having data and a computing in memory micro-unit disposed in the computing in memory unit, the computing in memory micro-unit having at least one of a memory matrix and a logic elements matrix.

Abstract: Systems and methods are provided for implementing hardware optimization for a hardware accelerator. The hardware accelerator emulates a neural network. Training of the neural network integrates a regularized pruning technique to systematically reduce a number of weights. A crossbar array included in hardware accelerator can be programmed to calculate node values of the pruned neural network to selectively reduce the number of weight column lines in the crossbar array. During deployment, the hardware accelerator can be programmed to power off periphery circuit elements that correspond to a pruned weight column line to optimize the hardware accelerator for power. Alternatively, before deployment, the hardware accelerator can be optimized for area by including a finite number of weight column line. Then, regularized pruning of the neural network selectively reduces the number of weights for consistency with the finite number of weight columns lines in the hardware accelerator.

Abstract: Systems and methods are provided for implementing a hardware accelerator. The hardware accelerator emulates a neural network, and includes a memristor crossbar array, and a non-linear filter. The memristor crossbar array can be programmed to calculate node values of the neural network. The nodes values can be calculated in accordance with rules to reduce an energy function associated with the neural network. The non-linear filter is coupled to the memristor crossbar array and programmed to harness noise signals that may be present in analog circuitry of the hardware accelerator. The noise signals can be harnessed such that the energy function associated with the neural network converges towards a global minimum and modifies the calculated node values. In some embodiments, the non-liner filter is implemented as a Schmidt trigger comparator.

Abstract: A DPE memristor crossbar array system includes a plurality of partitioned memristor crossbar arrays. Each of the plurality of partitioned memristor crossbar arrays includes a primary memristor crossbar array and a redundant memristor crossbar array. The redundant memristor crossbar array includes values that are mathematically related to values within the primary memristor crossbar array. In addition, the plurality of partitioned memristor crossbar arrays includes a block of shared analog circuits coupled to the plurality of partitioned memristor crossbar arrays. The block of shared analog circuits is to determine a dot product value of voltage values generated by at least one partitioned memristor crossbar array of the plurality of partitioned memristor crossbar arrays.

Abstract: Examples described herein relate to a security system consistent with the disclosure. For instance, the security system may comprise a sensor interface bridge connecting a gateway to an input/output (I/O) card, a Field Programmable Gate Array (FPGA) to scan data to detect an anomaly in the data while the data is in the sensor interface bridge, where a learning neural network accelerator Application-Specific Integrated Circuit (ASIC) is integrated with the FPGA and send the data without an anomaly to the gateway.

Abstract: The present disclosure provides a memristive array. The array includes a number of memristive devices. A memristive device is switchable between states and is to store information. The memristive array also includes a parallel reset control device coupled to the number of memristive devices in parallel. The parallel reset control device regulates a resetting operation for the number of memristive devices by regulating current flow through target memristive devices.

Abstract: An analog content addressable memory cell includes a high side and a low side. The high side encodes a high bound on a range of values and includes a first voltage divider formed of a first programmable resistor and a first electronically controlled variable resistor. The low side encodes a low bound on the range of values and includes a second voltage divider formed of a second programmable resistor and a second electronically controlled variable resistor.

Abstract: Staged neural networks and methods therefor are provided for solving NP hard/complete problems. In some embodiments, the methods include identifying a plurality of second NP hard/complete problems, wherein each of the second NP hard/complete problems is similar to the first NP hard/complete problem; identifying solutions to the second NP hard/complete problems; training a deep neural network with the second NP hard/complete problems and the solutions; providing the first NP hard/complete problem to the trained deep neural network, wherein the trained deep neural network generates a preliminary solution to the first NP hard/complete problem; and providing the preliminary solution to a recursive neural network configured to execute an energy minimization search, wherein the recursive neural network generates a final solution to the problem based on the preliminary solution.