Abstract: Techniques and systems are described for creating and operating a vibration triangulation network. The network can include vibration sensor devices placed in a building, such as a store or a house, which are able to pinpoint the location of a target, e.g., person, animal, etc., through triangulation. A described technique includes receiving vibration notifications from vibration sensor devices, determining a location of a target within the building based on at least a portion of the vibration notifications and a vibration sensor map associated with the building, and triggering an alarm event based on a detection of the target.

Abstract: A video processing device which can be implemented as a peripheral device is disclosed. The video processing device is configured to receive one or more videos and audio through a plurality interfaces. Further, the device receives one or more user input corresponding to one or more customization requests of the received video and the audio. The video processing device processes the video and the audio based on the received user input and outputs the processed video and audio via an output interface.

Abstract: Disclosed in some examples are NAND devices, firmware, systems, methods, and devices that apply smart algorithms to process ECC errors by taking advantage of excess overprovisioning. In some examples, when the amount of overprovisioned blocks are above a predetermined threshold, a first ECC block error handling mode may be implemented and when the overprovisioned blocks are equal or less than the predetermined threshold, a second mode of ECC block error handling may be utilized.

Abstract: Methods, systems, and apparatus for door knock access control are disclosed. A monitoring system for monitoring a property includes: a proximity sensor located at a door of the property; a microphone that is configured to detect sound within an area near the door and generate audio data that represents the detected sound; and a monitor control unit configured to perform operations including: receiving, from the proximity sensor, proximity data indicating an object positioned within a set proximity to the door; based on receiving the proximity data, activating the microphone; receiving, from the microphone, the audio data; determining that a similarity between the audio data and stored audio data representing a knocking pattern satisfies similarity criteria; and in response to determining that the similarity between the audio data and the stored audio data satisfies similarity criteria, performing a monitoring system action.

Abstract: A semiconductor device including a silicon-on-insulator (SOI) wafer comprising a doped silicon substrate, a buried oxide layer on the doped silicon substrate, and a silicon device layer on the buried oxide layer. An inner electrode and a node dielectric layer of a capacitor are disposed in a trench of the SOI wafer. The inner electrode and the node dielectric layer penetrate through the buried oxide layer and extend into the doped silicon substrate. At least a select transistor is disposed on the buried oxide layer. The select transistor includes a source doping region and a drain doping region, a channel region between the source doping region and the drain doping region, and a gate over the channel region. At least an embedded contact is disposed atop the capacitor to electrically couple the drain doping region of the select transistor with the inner electrode of the capacitor.

Abstract: A semiconductor device including a silicon-on-insulator (SOI) wafer comprising a doped silicon substrate, a buried oxide layer on the doped silicon substrate, and a silicon device layer on the buried oxide layer. At least a trench capacitor is disposed in a trench of the SOI wafer. The trench capacitor penetrates through the buried oxide layer and extends into the doped silicon substrate. At least a select transistor is disposed on the silicon device layer. The select transistor includes a source doping region and a drain doping region, a channel region between the source doping region and the drain doping region, and a gate over the channel region. At least an embedded contact is disposed atop the trench capacitor to electrically couple the drain doping region of the select transistor with an inner electrode of the trench capacitor.

Abstract: This application provides, inter alia, antibodies or antigen-binding fragments thereof, targeting OX40 expressed on injured tissues associated with multiple diseases. These OX40 antibodies, or antigen-binding fragments thereof, have a high affinity for OX40 and function as OX40 agonists or as OX40/OX40L antagonists. The antibodies and antigen-binding fragments are useful for treatment of human diseases, infections, and other conditions.

Abstract: A home controlled ovarian hyperstimulation method for in vitro fertilization (IVF) or egg freezing and a home IVF kit are described herein.

Abstract: Disclosed in some examples are NAND devices, firmware, systems, methods, and devices that apply smart algorithms to process ECC errors by taking advantage of excess overprovisioning. In some examples, when the amount of overprovisioned blocks are above a predetermined threshold, a first ECC block error handling mode may be implemented and when the overprovisioned blocks are equal or less than the predetermined threshold, a second mode of ECC block error handling may be utilized.

Abstract: This application provides isolated antibodies, and antigen-binding fragments thereof, that specifically bind Calcitonin Gene Related Peptide (CGRP). These anti-CGRP antibodies, or antigen-binding fragments thereof, have a high affinity for CGRP, function to inhibit CGRP, are less immunogenic compared to their unmodified parent antibodies in a given species (e.g., a human) and can be used to treat CGRP-associated disorders, while avoiding the adverse side effects associated with the current CGRP antagonist therapies.

Abstract: A home controlled ovarian hyperstimulation method for in vitro fertilization (IVF) or egg freezing and a home IVF kit are described herein.

Abstract: A semiconductor device includes a first stack of nanowires above a substrate with a first gate structure over, around, and between the first stack of nanowires and a second stack of nanowires above the substrate with a second gate structure over, around, and between the second stack of nanowires. The device also includes a first source/drain region contacting a first number of nanowires of the first nanowire stack and a second source/drain region contacting a second number of nanowires of the second nanowire stack such that the first number and second number of contacted nanowires are different.

Abstract: A home controlled ovarian hyperstimulation method for in vitro fertilization (IVF) or egg freezing and a home IVF kit are described herein.

Abstract: A home controlled ovarian hyperstimulation method for in vitro fertilization (IVF) or egg freezing and a home IVF kit are described herein.

Abstract: A monitoring system that is configured to monitor a property is disclosed. The monitoring system includes a sensor that is configured to generate sensor data that indicates an attribute of the property; a floor sensor that is configured to generate floor sensor data that indicates an amount of pressure applied to a portion of a floor of the property; and a monitor control unit. The monitor control unit is configured to receive, from the sensor, the sensor data; receive, from the floor sensor, the floor sensor data; analyze the sensor data and the floor sensor data; and based on analyzing the sensor data and the floor sensor data, perform a monitoring system action.

Abstract: A semiconductor device includes a first gate stack arranged about a first nanowire and a second nanowire, the first nanowire is arranged above a second nanowire, the first nanowire is connected to a first source/drain region and a second source/drain region. A second gate stack is arranged about a third nanowire and a fourth nanowire, the third nanowire is arranged above a fourth nanowire, the third nanowire is connected to a third source/drain region and a fourth source/drain region. An insulator layer having a first thickness is arranged adjacent to the first gate stack.

Abstract: A home controlled ovarian hyperstimulation method for in vitro fertilization (IVF) or egg freezing and a home IVF kit are described herein.

Abstract: This application provides isolated antibodies, and antigen-binding fragments thereof, that specifically bind Programmed Death Ligand-1 (PD-L1). These PD-L1 antibodies, or antigen-binding fragments thereof, have a high affinity for PD-L1, function to inhibit PD-L1, are less immunogenic compared to their unmodified parent antibodies in a given species (e.g., a human), are capable of increasing T-cell proliferation and IL-2 secretion in a mixed lymphocyte reaction, and can be used to treat human diseases (e.g., cancer, infectious diseases, autoimmune diseases, asthma, transplant rejection, and inflammatory disorders).

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to overlay mark structures and methods of manufacture. The method includes: forming an overlay mark within a layer of a stack of layers; increasing a density of an upper layer of the stack of layers, above the layer, the increased density protecting the overlay mark; and polishing the upper layer or one or more layers above the upper layer of the stack of layers.

Abstract: A method of forming a semiconductor device and resulting structures having nanosheet transistors with sharp junctions by forming a nanosheet stack over a substrate, the nanosheet stack having a plurality of nanosheets alternating with a plurality of sacrificial layers, such that a topmost and a bottommost layer of the nanosheet stack is a sacrificial layer; forming an oxide recess on a first and a second end of each sacrificial layer; and forming a doped extension region on a first and a second end of each nanosheet.