Abstract: Methods of forming integrated circuit devices include depositing an electrically insulating layer onto an integrated circuit substrate having integrated circuit structures thereon. This deposition step results in the formation of an electrically insulating layer having an undulating surface profile, which includes at least one peak and at least on valley adjacent to the at least one peak. A non-uniform thickening step is then performed. This non-uniform thickening step includes thickening a portion of the electrically insulating layer by redepositing portions of the electrically insulating layer from the least one peak to the at least one valley. This redeposition occurs using a sputter deposition technique that utilizes the electrically insulating layer as a sputter target.

Abstract: A chip is provided which includes a back-end-of-line (“BEOL”) interconnect structure. The BEOL interconnect structure includes a plurality of interlevel dielectric (“ILD”) layers which include a dielectric material curable by ultraviolet (“UV”) radiation. A plurality of metal interconnect wiring layers are embedded in the plurality of ILD layers. Dielectric barrier layers cover the plurality of metal interconnect wiring layers, the dielectric barrier layers being adapted to reduce diffusion of materials between the metal interconnect wiring layers and the ILD layers. One of more of the dielectric barrier layers is adapted to retain compressive stress while withstanding UV radiation sufficient to cure the dielectric material of the ILD layers, making the BEOL structure better capable of avoiding deformation due to thermal and/or mechanical stress.

Abstract: A method is provided for manufacturing an integrated circuit having a plurality of MOSFET devices, comprising the steps of: providing a plurality of MOSFET devices each having a first and a second structural parameter associated therewith, wherein a value of one of the first and a second structural parameter of each device is selected to provide a value of a performance parameter of the device substantially equal to a predetermined reference value, the predetermined reference value being the same for each device.

Abstract: The present invention relates to integrated circuits. In particular, but not exclusively, the invention relates to a method and apparatus for connecting elements of integrated circuits with interconnects having one or more voids formed between adjacent interconnects. Embodiments of the invention provide apparatus for connecting elements in an integrated circuit device, comprising: at least one interconnect comprising one or more sidewalls; an interconnect sidewall spacer element arranged to provide structural support to the interconnect and formed on at least one of the interconnect sidewalls; and at least one void adjacent said interconnect and extending from the sidewall spacer element.

Abstract: An integrated circuit system is provided including providing a substrate, forming an isolation structure base in the substrate without removal of the substrate, and forming a first transistor in the substrate next to the isolation structure base.

Abstract: A device layer is configured to reduce change in stress characteristics due to subsequent processing to reduce cracking of a subsequently formed layer. The change in stress characteristics can be reduced by providing a shield layer over the device layer to protect the device layer from exposure to subsequently processing, such as curing medium used to form voids in an ultralow-k dielectric layer.

Abstract: A semiconductor processing system with ultra low-K dielectric is provided including providing a substrate having an electronic circuit, forming an ultra low-K dielectric layer, having porogens, over the substrate, blocking an incoming radiation from a first region of the ultra low-K dielectric layer, evaporating the porogens from a second region of the ultra low-K dielectric layer by projecting the incoming radiation on the second region, and removing the ultra low-K dielectric layer in the first region with a developer.

Abstract: An example embodiment of a method of forming a semiconductor device comprising the following. We form at least a first transistor over a first region of a substrate and forming at least a second transistor over a second region of the substrate. We form a stress layer over the first and second transistors. We form an electromagnetic radiation blocking layer over the second transistor and not over the first transistor. In an exposure step, we expose the electromagnetic radiation blocking layer over the second transistor and exposing the stress layer over the first transistor to electromagnetic radiation to form a cured stress layer over the first transistor. The cured stress layer has a different stress than the stress layer. We may remove the electromagnetic radiation blocking layer.

Abstract: Methods of forming interconnect structures include forming a first metal wiring pattern on a first dielectric layer and forming a capping layer (e.g., SiCN layer) on the first copper wiring pattern. An adhesion layer is deposited on the capping layer, using a first source gas containing octamethylcyclotetrasilane (OMCTS) at a volumetric flow rate in a range from about 500 sccm to about 700 sccm and a second gas containing helium at a volumetric flow rate in a range from about 1000 to about 3000 sccm. The goal of the deposition step is to achieve an adhesion layer having an internal compressive stress of greater than about 150 MPa therein, so that the adhesion layer is less susceptible to etching/cleaning damage and moisture absorption during back-end processing steps. Additional dielectric and metal layers are then deposited on the adhesion layer.

Abstract: An integrated circuit system is provided including forming a circuit element on a wafer, forming a stress formation layer on the wafer, protecting a portion of the stress formation layer, and irradiating the wafer for modification of a stress value of an unprotected portion of the stress formation layer.

Abstract: Dielectric layers are formed on a substrate by performing Subatmospheric Chemical Vapor Deposition (SACVD) of ozone-tetraethoxysilane (O3-TEOS) to form a layer of O3-TEOS on the substrate, and treating the layer of O3-TEOS with ultraviolet (UV) radiation. The UV radiation treatment can increase the tensile stress in the O3-TEOS layer by reducing the amount of water in the layer. Moreover, the UV treatment may also reduce the amount of silanol in the O3-TEOS layer, which can also increase reliability of the device.

Abstract: A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor structure. We form a CuSiN barrier layer over the sidewalls and bottom of the interconnect opening by reacting with the first copper layer. We then form an interconnect over the CuSiN layer filling the interconnect opening. We can form a CuSiN cap layer on the top surface of the interconnect.