Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

Abstract: A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain.

Abstract: A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 ? to about 20,000 ? and a refractive index in a range of about 1.85 to about 2.0.

Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Abstract: Provided may be a panel structure, a display device including the panel structure, and methods of manufacturing the panel structure and the display device. Via holes for connecting elements of the panel structure may be formed by performing one process. For example, via holes for connecting a transistor and a conductive layer spaced apart from the transistor may be formed by performing only one process.

Abstract: Disclosed herein is a composition for producing an insulator. More specifically, the composition comprises a silane-based organic-inorganic hybrid material containing one or more multiple bonds, an acrylic organic crosslinking agent and a silane-based crosslinking agent having six or more alkoxy groups. Also disclosed herein is an organic insulator produced using the insulator composition. The organic insulator is highly crosslinked to facilitate the fabrication of an organic thin film transistor in terms of processing.

Abstract: According to a method for forming a UV patternable conductive polymer film, vapor-phase polymerization (VPP) may be employed to synthesize a conductive polymer, and a UV-curable polymer resin may be used as a binder to form a conductive polymer film, the method including coating a mixed solution of a binder and an oxidant on a transparent substrate, synthesizing a conductive polymer by vapor-phase polymerization (VPP) on the coating to form a conductive polymer film and patterning the conductive polymer film with UV light. The conductive polymer film may be patterned in a relatively simple manner while maintaining increased conductivity, improved transparency and improved flexibility. Therefore, the conductive polymer film may be used as a material for transparent electrodes of a variety of display devices, e.g., LCD and PDP devices, and electronic devices, e.g., ELs and TFTs.

Abstract: Disclosed herein is an organosilicon nanocluster, wherein a silicon cluster is substituted with a conductive organic material, a silicon thin film including the same, a thin film transistor including the silicon thin film, a display device including the thin film transistor, and methods of forming the same. The organosilicon nanocluster may more easily and efficiently form a thin film while maintaining electrical characteristics of an amorphous silicon thin film.

Abstract: Disclosed herein is a composition for producing an insulator. More specifically, the composition comprises a silane-based organic-inorganic hybrid material containing one or more multiple bonds, an acrylic organic crosslinking agent and a silane-based crosslinking agent having six or more alkoxy groups. Also disclosed herein is an organic insulator produced using the insulator composition. The organic insulator is highly crosslinked to facilitate the fabrication of an organic thin film transistor in terms of processing.

Abstract: A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant.

Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

Abstract: Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

Abstract: This invention pertains to a composition for a dielectric thin film, which is capable of being subjected to a low-temperature process. Specifically, the invention is directed to a metal oxide dielectric thin film formed using the composition, a preparation method thereof, a transistor device comprising the dielectric thin film, and an electronic device comprising the transistor device. The electronic device to which the dielectric thin film has been applied exhibits excellent electrical properties, thereby satisfying both a low operating voltage and a high charge mobility.

Abstract: An organic insulator composition according to example embodiments may include an organic insulating polymer and an epoxy-based crosslinking agent. The epoxy-based crosslinking agent may have an alkyl group or a fluorine-based side chain. The organic insulator composition may be used to form an organic insulating layer having increased chemical resistance. The organic insulating layer may be used in an organic thin film transistor as a gate insulating layer. Consequently, the occurrence of hysteresis may be reduced or prevented during the operation of the organic thin film transistor, thus resulting in relatively homogeneous properties.

Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Abstract: Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.

Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

Abstract: An insulating resin composition is provided. The insulating resin composition includes (A) a silicon-based polymer having either primary or secondary amine groups or both, (B) an organometallic compound, and (C) a solvent. The physicochemical properties of the insulating resin composition are maintained during processing steps for the fabrication of a semiconductor device. Therefore, the use of the insulating resin composition prevents deterioration of the characteristics of the semiconductor device arising from defects, spots, aggregates, and the like, in an insulating film and reduces the hysteresis of the semiconductor device to improve the characteristics of the semiconductor device.

Abstract: Provided may be a panel structure, a display device including the panel structure, and methods of manufacturing the panel structure and the display device. Via holes for connecting elements of the panel structure may be formed by performing one process. For example, via holes for connecting a transistor and a conductive layer spaced apart from the transistor may be formed by performing only one process.

Abstract: A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant.