Abstract: A semiconductor thin film using a self-assembled monolayer (SAM) and a method for producing the semiconductor thin film are provided. According to the semiconductor thin film, a uniform inorganic seed layer is formed by using the self-assembled monolayer so that the adhesion between an insulating layer and a semiconductor layer is enhanced and thus the surface tension is reduced, thereby allowing the semiconductor thin film to have high quality without defects.

Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

Abstract: A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant.

Abstract: An organic insulator composition according to example embodiments may include an organic insulating polymer and an epoxy-based crosslinking agent. The epoxy-based crosslinking agent may have an alkyl group or a fluorine-based side chain. The organic insulator composition may be used to form an organic insulating layer having increased chemical resistance. The organic insulating layer may be used in an organic thin film transistor as a gate insulating layer. Consequently, the occurrence of hysteresis may be reduced or prevented during the operation of the organic thin film transistor, thus resulting in relatively homogeneous properties.

Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

Abstract: Disclosed herein is a composition, including a fluorine-based polymer or a perfluoropolyether (PFPE) derivative and a PFPE-miscible polymer, an anti-oxide film and electronic component including the same, and methods of forming an anti-oxide film and an electronic component. Use of the composition may achieve formation of an anti-oxide film through a solution process and electronic components using a metal having increased conductivity and decreased production costs.

Abstract: Disclosed herein is a composition for producing an insulator. More specifically, the composition comprises a silane-based organic-inorganic hybrid material containing one or more multiple bonds, an acrylic organic crosslinking agent and a silane-based crosslinking agent having six or more alkoxy groups. Also disclosed herein is an organic insulator produced using the insulator composition. The organic insulator is highly crosslinked to facilitate the fabrication of an organic thin film transistor in terms of processing.

Abstract: Example embodiments provide a method for forming a UV-patternable conductive polymer film. According to the method, vapor-phase polymerization (VPP) may be employed to synthesize a conductive polymer and a UV-curable polymer resin may be used as a binder to form a conductive polymer film. Example embodiments also provide a conductive polymer film formed by the method. The conductive polymer film may be patterned in a relatively simple manner while maintaining increased conductivity, improved transparency and improved flexibility. Therefore, the conductive polymer film may be used as a material for transparent electrodes of a variety of display devices, e.g., LCD and PDP devices, and electronic devices, e.g., ELs and TFTs.

Abstract: Disclosed herein is an organosilicon nanocluster, wherein a silicon cluster is substituted with a conductive organic material, a silicon thin film including the same, a thin film transistor including the silicon thin film, a display device including the thin film transistor, and methods of forming the same. The organosilicon nanocluster may more easily and efficiently form a thin film while maintaining electrical characteristics of an amorphous silicon thin film.

Abstract: A siloxane-based resin having germanium and an interlayer insulating film for a semiconductor device formed using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties so that they are useful materials for an insulating film between interconnecting layers of a semiconductor device.

Abstract: This invention pertains to a composition for a dielectric thin film, which is capable of being subjected to a low-temperature process. Specifically, the invention is directed to a metal oxide dielectric thin film formed using the composition, a preparation method thereof, a transistor device comprising the dielectric thin film, and an electronic device comprising the transistor device. The electronic device to which the dielectric thin film has been applied exhibits excellent electrical properties, thereby satisfying both a low operating voltage and a high charge mobility.

Abstract: Disclosed herein is a thin film prepared using a mixture of nanocrystal particles and a molecular precursor. The nanocrystal is used in the thin film as a nucleus for crystal growth to minimize grain boundaries of the thin film and the molecular precursor is used to form the same crystal structure as the nanocrystal particles, thereby improving the crystallinity of the thin film. The thin film can be used effectively in a variety of electronic devices, including thin film transistors, electroluminescence devices, memory devices, and solar cells. Further disclosed is a method for preparing the thin film.

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Abstract: A siloxane-based resin having germanium and an interlayer insulating film for a semiconductor device formed using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties so that they are useful materials for an insulating film between interconnecting layers of a semiconductor device.

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Abstract: A siloxane-based resin having germanium and an interlayer insulating film for a semiconductor device formed using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties so that they are useful materials for an insulating film between interconnecting layers of a semiconductor device.