Abstract: A high fT and fmax bipolar transistor (100) includes an emitter (104), a base (120), and a collector (116). The emitter has a lower portion (108) and an upper portion (112) that extends beyond the lower portion. The base includes an intrinsic base (14) and an extrinsic base (144). The intrinsic base is located between the lower portion of the emitter and the collector. The extrinsic base extends from the lower portion of the emitter beyond the upper portion of the emitter and includes a continuous conductor (148) that extends from underneath the upper portion of the emitter and out from underneath the upper portion of the emitter. The continuous conductor provides a low electrical resistance path from a base contact (not shown) to the intrinsic base. The transistor may include a second conductor (152) that does not extend underneath the upper portion of the emitter, but which further reduces the electrical resistance through the extrinsic base.

Abstract: A method and a BICMOS structure are provided. The BiCMOS structure includes an SOI substrate having a bottom Si-containing layer, a buried insulating layer located atop the bottom Si-containing layer, a top Si-containing layer atop the buried insulating layer and a sub-collector which is located in an upper surface of the bottom Si-containing layer. The sub-collector is in contact with a bottom surface of the buried insulating layer.

Abstract: A multilayer semiconductor device and method of making a dual stacked metal-insulator-metal (MIM) capacitor of a multilayer semiconductor device, which includes a bottom metal layer including a capacitor plate and a wiring level, an intermediate metal layer forming at least a capacitor plate, and a top metal layer including a capacitor plate and a wiring level, a via that electrically contacts the intermediate metal layer, and at least two electrically connected vias that contact the bottom metal layer and the top metal layer. A dielectric etchstop layer may be formed above the dual stacked MIM capacitor.

Abstract: A modified noble metal catalyst based calorimetric sensor for sensing non-methane hydrocarbons in an automotive exhaust gas stream includes a first sensing element (105) with an output that provides a signal (111) indicative of a concentration of indicative of non-methane hydrocarbons, hydrogen (H.sub.2), and carbon monoxide (CO). A compensating sensing element (107) has an output that provides a compensating signal (113) indicative of a concentration of hydrogen (H.sub.2) and carbon monoxide (CO). A circuit for combining the signal and the compensating signal provides a combined signal indicative of a measure of non-methane hydrocarbons in the automotive exhaust gas stream.

Abstract: A transition metal oxide based calorimetric non-methane hydrocarbon sensor (100) is constructed by disposing a transition metal based catalyst (105), preferably chromium oxide (Cr.sub.2 O.sub.3), onto a carrier (101). A temperature measurement device (103) is positioned thermally coupled to the transition metal based catalyst (105). A preferred application includes sensing non-methane heavy hydrocarbons in an automotive exhaust gas stream (803) by exposing a transition metal oxide catalyst based sensor (805) to the exhaust gas stream (803) and providing a signal (811) indicative of a concentration of non-methane heavy hydrocarbons and carbon monoxide (CO). Then, exposing a compensating sensor (807) to the same exhaust gas stream (803) and providing a compensating signal (813) indicative of a concentration of carbon monoxide (CO). By combining the signal (811) and the compensating signal (813), a measure of non-methane heavy hydrocarbons can be provided.

Abstract: A selective gas sensor (10) for detecting a particular compound, or group of compounds, such as non-methane hydrocarbons, within a high temperature gas stream (12) includes an oxygen generation system (14) positioned over an oxygen diffusion region (15). The oxygen generation system (14) and the oxygen diffusion region (15) provide oxygen through a medial temperature control zone (20) to a sensing element (16). The temperature and flux of hydrocarbon components within the high temperature gas stream (12) are regulated by components within the high temperature control zone (20) and by an external temperature control zone (22) in thermal contact with the sensing element (16).

Abstract: A wide range oxygen sensor is provided which operates partially in the diffusion limited current mode to provide an output which is proportional to the oxygen partial pressure in a gas mixture which is sensed, such as the exhaust gas of an automotive internal combustion engine. The wide range oxygen sensor is constructed to have a planar structure with a single solid electrolyte layer that is shared by electrochemical storage, pumping and reference cells and which is deposited using known thermal deposition techniques. As a result, the wide range oxygen sensor of the present invention is characterized as being relatively low cost and readily producible under mass production conditions. Moreover, the wide range oxygen sensor is capable of rapidly and accurately sensing the exhaust gas oxygen partial pressure while the engine is operating in either the fuel-rich or fuel-lean condition to enable the evaluation of the air-to-fuel ratio of the precombustion fuel mixture.

Abstract: A sensor for gaseous and vaporous species is disclosed. The sensor comprises an electrically insulated substrate which contains small pores passing completely through it. Electrodes consisting of metallic or semiconductor material are deposited onto the top surface of the substrate. In a first embodiment of the invention, an electrolyte is placed on the top surface of the substrate in such a manner as to create a gas or vapor permeable electrolyte layer on top of the electrodes. In a second embodiment of the invention, the electrolyte is applied to the bottom surface of the substrate and seeps up through the porous holes of the substrate until it makes contact with the electrodes. Both embodiments result in a gas sensor with a response time dependent upon the gas flow rate rather than the time required for the gas to be dissolved in the electrolyte layer and be detected.