Abstract: A method for creating an array of thermoelectric elements includes applying a first coating of dielectric material to P-type wafers and N-type wafers to form coated P-type wafers and coated N-type wafers. A P/N-type ingot is formed from the coated P-type wafers and the coated N-type wafers. The coated P-type wafers and the coated N-type wafers are alternatingly arranged in the P/N-type ingot. P/N-type wafers comprising P-type elements and N-type elements are sliced from the P/N-type ingot and a second coating of the dielectric material is applied to the P/N-type wafers to form coated P/N-type wafers. Furthermore, a P/N-type array from the coated P/N-type wafers.

Abstract: A method for creating an array of thermoelectric elements may include providing a rigid block including P-type material layers and N-type material layers stacked in an alternating relationship and bonded together by an adhesive. First channels may be formed in the block parallel to the P-type material layers and the N-type material layers and may partially extend through a depth of the block leaving an uncut bottom on the block. The first channels may be filled with an electrically and thermally insulating material and second channels may be formed in the block, transverse to the first channels. The second channels may partially extend through the depth of the block. The second channels may be filled with the electrically and thermally insulating material and the uncut bottom may be removed from the block.

Abstract: A method of forming an P/N-type array of P-type and N-type material includes stacking a plurality of P-type material wafers and a plurality of N-type material wafers into a P/N-type array. At least one spacer is provided between adjacent wafers. The P-type material wafers and the N-type material wafers are boned together the into a composite P/N-type brick. The method may also include providing a second composite P/N-type brick. A plurality of channels and fingers are created in the first and second composite P/N-type bricks. The first and second composite P/N-type bricks are fit together to form a P/N-type mosaic. Alternatively, the method may include providing a single P/N-type brick. A plurality of channels is created in the composite P/N-type brick. The channels are then back filled with an electrically and thermally insulating adhesive so that a P/N-type grid of P-type elements and N-type elements is formed.

Abstract: A method of forming a thermoelectric device includes extruding a P/N-type billet to form a P/N-type extrusion having a first plurality of P-type regions and a first plurality of N-type regions. The P/N-type extrusion is sliced into a plurality of P/N-type wafers. A diffusion barrier metallization is applied to at least a subset of the P-type regions and N-type regions. One side of at least one P/N-type wafer is attached to a temporary substrate. The P/N-type regions of the P/N-type wafer are separated into an array of isolated P-type and N-type elements. The array of elements are coupled to a first plate having a first patterned metallization to form a thermoelectric circuit. The temporary substrate and bonding media may be detached from the P-type and N-type elements. The thermoelectric circuit may be coupled with a second plate at a second end of the thermoelectric circuit, second plate having a second patterned metallization.