Abstract: A method for manufacturing a microstructure-based drug injection device according to an embodiment of the present invention includes: a forming mold preparation step for preparing a forming mold formed in a shape corresponding to a microstructure to be manufactured; a biodegradable material-mixed solution application step for applying a biodegradable material-mixed solution to the forming mold; a primary drying step for drying the biodegradable material-mixed solution applied to the forming mold and forming a needle film in which the microstructure is formed; a drug filling step for filling a drug into a filling space formed by the microstructure; and a secondary drying step for drying the needle film, wherein, in the filling space that has undergone the secondary drying step, an inner space portion is formed in a region other than in the region in which the drug is accommodated.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: A nucleic acid film fabrication method, includes: a mixing step in which a nucleic acid is added in powder form to distilled water or deionized water to prepare a mixed solution; a stirring step in which the mixed solution is stirred; a mixed solution application step in which the mixed solution is applied to a mold corresponding in shape to a final product of a nucleic acid film; and a drying step in which the mixed solution applied to the mold is dried to be formed into the nucleic acid film, wherein the mold has a groove formed thereon in a thickness direction thereof, such that the nucleic acid film passing through the drying step has a protrusion protruding from one surface thereof toward human skin to correspond to the groove.

Abstract: A nucleic acid film fabrication method, includes: a mixing step in which a nucleic acid is added in powder form to distilled water or deionized water to prepare a mixed solution; a stirring step in which the mixed solution is stirred; a mixed solution application step in which the mixed solution is applied to a mold corresponding in shape to a final product of a nucleic acid film; and a drying step in which the mixed solution applied to the mold is dried to be formed into the nucleic acid film, wherein the mold has a groove formed thereon in a thickness direction thereof, such that the nucleic acid film passing through the drying step has a protrusion protruding from one surface thereof toward human skin to correspond to the groove.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: An embodiment of the present invention provides an ultrasonic wave amplifying unit which can improve ultrasonic power in air, wherein the ultrasonic wave amplifying unit includes multiple rings having a concentric axis and each having a first width, and a slit having a second width is formed between the rings and an air layer is formed between the multiple rings and an ultrasonic wave generator generating ultrasonic waves or a transfer medium transferring the ultrasonic waves.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: A method is for manufacturing a magnetic-tunnel-junction (MTJ) device. The method includes forming a free magnetic layer over a substrate, forming a metal layer over the free magnetic layer, and oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250° K or less.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: A method for manufacturing a three-dimensional structure through nano-imprinting, includes: a stamp preparation step in which a stamp formed with a convex-concave portion corresponding to a pattern of functional layers to be formed is prepared; a material formation step in which at least one material for forming the functional layers is formed to a thickness of several to dozens of nanometers on the convex-concave portion; a material stacking step in which the material formed on the convex-concave portion is stacked on a substrate; and a functional layer securing step in which the material is cured by applying pressure, heat and pressure, or light and pressure thereto such that the material can be converted into the functional layers.

Abstract: Semiconductor devices may include a first memory cell on a substrate and a second memory cell on the substrate and adjacent to the first memory cell. The first memory cell may include a first reference layer, a first storage layer, a first tunnel layer between the first reference layer and the first storage layer, and a first spin-orbit torque (SOT) line in contact with the first storage layer. The second memory cell may include a second reference layer, a second storage layer, a second tunnel layer between the second reference layer and the second storage layer, a second SOT line adjacent to the second storage layer, and an enhancing layer between the second storage layer and the second SOT line.

Abstract: A method is for manufacturing a magnetic-tunnel-junction (MTJ) device. The method includes forming a free magnetic layer over a substrate, forming a metal layer over the free magnetic layer, and oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250° K or less.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: A nucleic acid film fabrication method, includes: a mixing step in which a nucleic acid is added in powder form to distilled water or deionized water to prepare a mixed solution; a stirring step in which the mixed solution is stirred; a mixed solution application step in which the mixed solution is applied to a mold corresponding in shape to a final product of a nucleic acid film; and a drying step in which the mixed solution applied to the mold is dried to be formed into the nucleic acid film, wherein the mold has a groove formed thereon in a thickness direction thereof, such that the nucleic acid film passing through the drying step has a protrusion protruding from one surface thereof toward human skin to correspond to the groove.

Abstract: Provided is a semiconductor manufacturing apparatus including a transfer chamber, a first process chamber connected to the transfer chamber, and a second process chamber connected to the transfer chamber. The transfer chamber may be configured to transfer a substrate. The first process chamber may be configured to perform a first oxidation process for oxidizing a metal layer on the substrate at a first temperature. The second process chamber may be configured to perform a second oxidation process for oxidizing a metal layer on the substrate at a second temperature higher than the first temperature.

Abstract: A method for manufacturing a three-dimensional structure through nano-imprinting, includes: a stamp preparation step in which a stamp formed with a convex-concave portion corresponding to a pattern of functional layers to be formed is prepared; a material formation step in which at least one material for forming the functional layers is formed to a thickness of several to dozens of nanometers on the convex-concave portion; a material stacking step in which the material formed on the convex-concave portion is stacked on a substrate; and a functional layer securing step in which the material is cured by applying pressure, heat and pressure, or light and pressure thereto such that the material can be converted into the functional layers.

Abstract: An exemplary embodiment of the present invention provides a manufacturing method of an electrode structure for an energy storage device, the method including: forming a polymer substrate configured to have a first uneven pattern on a first surface; forming an electrode active material layer on the first uneven pattern in a state that an tensile force is applied to the polymer substrate; and forming a second uneven pattern on the polymer substrate and the electrode active material layer by removing the tensile force.

Abstract: In a method for fabricating an embedded pattern using a transfer-based imprinting, an adhesive layer is formed on a substrate. The adhesive layer has a photo curable resin. A stamp having a protruded pattern is prepared. A thin-film layer is formed on an outer surface of the protruded pattern of the stamp. The stamp having the thin-film layer contact with the adhesive layer is pressed to selectively transfer the thin-film layer of the protruded pattern to the adhesive layer. Ultraviolet rays (UV) are irradiated to cure the adhesive layer. The stamp is removed.

Abstract: An organic light emitting device having a photonic crystal structure and a manufacturing method thereof are provided. The organic light emitting device comprises: a substrate through which light passes; a photonic crystal layer formed on the substrate and having a photonic crystal structure; an intermediate layer formed on the photonic crystal layer and having a large refractive index compared with the photonic crystal layer; a first electrode layer formed on the intermediate layer; a light emitting layer formed on the first electrode layer and emitting light according to current flow; and a second electrode layer formed on the light emitting layer.

Abstract: An exemplary embodiment of the present invention provides a manufacturing method of an electrode structure for an energy storage device, the method including: forming a polymer substrate configured to have a first uneven pattern on a first surface; forming an electrode active material layer on the first uneven pattern in a state that an tensile force is applied to the polymer substrate; and forming a second uneven pattern on the polymer substrate and the electrode active material layer by removing the tensile force.