Abstract: Disclosed are a semiconductor memory device, a controller, and a memory system. The semiconductor memory device includes a memory cell array including a plurality of memory cells, and an error correcting code (ECC) decoder configured to receive first data and a parity output from selected memory cells of the memory cell array. The ECC decoder generates a syndrome based on the first data and the parity, generates a decoding status flag (DSF) indicating a type of an error of the first data by the syndrome, and outputs the second data and the DSF to an external device outside of the semiconductor memory device when a read operation of the semiconductor memory device is performed.

Abstract: A data journaling method in a solid state storage device, the method including: receiving a read request; determining whether updated data mapping for the read request is located in at least one of a volatile journal and a nonvolatile journal using a Bloom filter; searching the volatile journal if the updated data mapping for the request is located in the Bloom filter, and then, searching the nonvolatile journal if the updated data mapping for the request is not found in the volatile journal; and stopping the search when the updated data mapping is found.

Abstract: A method of decoding a low density parity check (LDPC) code, includes dividing a parity check matrix of the LDPC code, into a plurality of sub blocks. The method further includes, for each of a plurality of decoding iterations, performing a node operation of each of target sub blocks among the plurality of sub blocks, the target sub blocks corresponding to a present decoding iteration among the plurality of decoding iterations, in a decoding schedule, estimating a reliability of each of the target sub blocks, based on a result of the node operation of each of the target sub blocks, and adjusting the decoding schedule, based on the reliability of each of the target sub blocks.

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

Abstract: A memory system includes a nonvolatile memory device having a plurality of physical sectors, a mapping table, and a memory controller including a plurality of hash functions. The memory controller is configured to access the physical sectors using the mapping table and the hash functions. The memory controller is configured to receive a sequence of logical block addresses (LBAs) from a host and logical sector data for each of the LBAs, generate a first virtual address by operating a selected hash function among the hash functions on a first logical block address (LBA) among the sequence, compress the logical sector data to generate compressed data, and store the compressed data in a first physical sector among the physical sectors that is associated with the first virtual address.

Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.

Abstract: A non-volatile memory device including: a page buffer configured to latch a plurality of page data constituting one bit page of a plurality of bit pages, and a control logic configured to compare results of a plurality of read operations performed in response to a high-priority read signal set to select one of a plurality of read signals included in the high-priority read signal set as a high-priority read signal, and determine a low-priority read signal corresponding to the high-priority read signal, wherein the high-priority read signal set is for reading high-priority page data, and the low-priority read signal is for reading low-priority page data.

Abstract: A method of operating a storage device including a nonvolatile memory can be provided by receiving, from a host, address change information including changing logical addresses for data to be stored in the nonvolatile memory. Physical addresses can be sequentially allocated to the changing logical addresses included in the address change information to provide a first journal. A portion of at least one physical address allocated to the changing logical addresses can be removed to provide a second journal and the second journal can be stored in the nonvolatile memory.

Abstract: A method of storing survivor data generated while decoding channel polarization codes in a memory module includes setting a list size that corresponds to a number of decoder units used to decode the channel polarization codes, inputting a stream of input bits to the decoder units, and sequentially decoding the input bits. Each input bit is decoded using all previous input bits decoded before the each input bit. The method further includes selecting a plurality of survivor bits from among the decoded input bits, and storing the selected survivor bits in the memory module in a binary tree configuration. The number of edges in each level of the binary tree configuration does not exceed the list size.

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

Abstract: A semiconductor memory device includes: a memory cell array including a plurality of memory cells; an error correction code (ECC) engine configured to detect and/or correct at least one error bit in read data and configured to generate a decoding status flag indicative of whether the at least one error bit is detected and/or corrected, wherein the read data is read from the memory cell array; a channel interface circuit configured to receive the read data and the decoding status flag from the ECC engine and configured to transmit the read data and the decoding status flag to a memory controller, wherein the channel interface circuit is configured to transmit the decoding status flag to the memory controller through a pin; and a control logic circuit configured to control the ECC engine and the channel interface circuit in response to an address and a command from the memory controller.

Abstract: A method of operating a memory system, having a non-volatile memory device, includes processing a response to a first request toward the memory device by using an original key, in response to the first request, generating and storing first parity data corresponding to the original key, and deleting the original key.

Abstract: A method of setting a read voltage by a memory controller and a storage device are provided. The method includes controlling a memory device to read data from memory cells by applying a test read voltage to a selected word line; receiving, from the memory device, cell count information corresponding to a read operation of the memory device, and renewing the test read voltage by using the cell count information and a cost function to find an optimum read voltage, the cost function being determined for each read voltage level; and determining a read voltage by performing the controlling of the memory device and the renewing of the test read voltage at least once.

Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.

Abstract: An application specific integrated circuit (ASIC) tangibly encodes a program of instructions executable by the integrated circuit to perform a method for fast Chase decoding of generalized Reed-Solomon (GRS) codes. The method includes using outputs of a syndrome-based hard-decision (HD) algorithm to find an initial Groebner basis G for a solution module of a key equation, upon failure of HD decoding of a GRS codeword received by the ASIC from a communication channel; traversing a tree of error patterns on a plurality of unreliable coordinates to adjoin a next weak coordinate, where vertices of the tree of error patterns correspond to error patterns, and edges connect a parent error pattern to a child error pattern having exactly one additional non-zero value, to find a Groebner basis for each adjoining error location; and outputting an estimated transmitted codeword when a correct error vector has been found.

Abstract: A method of encoding generalized concatenated error-correcting codes includes providing a parity matrix {tilde over (H)}j of a j-th layer code and predefined syndrome {tilde over (s)} of length n?{tilde over (k)}j, where the first n-kl coordinates are zero, n is a length of a codeword c of a first layer BCH code Cl of dimension {tilde over (k)}j, codeword c satisfies {tilde over (H)}jc={tilde over (s)}, a first layer code includes only a BCH code, and each subsequent layer includes a Reed-Solomon (RS) stage followed by a BCH code; finding a square matrix R, of dimension (n?{tilde over (k)}j)(n?{tilde over (k)}j) such that Rj{tilde over (H)}j=(A|I), where A is an arbitrary matrix, Rj=(Qj|Tj), where Q has n?kl columns Tj and has k1?{tilde over (k)}j columns; finding a vector c?(a b) where a is a vector of length {tilde over (k)}j and b is a vector of length n?{tilde over (k)}j; and solving ( A | I ) ? ( a b ) = ( Q j | T j ) ? s ~ = T j ? s ? ? where ? ? a = 0 ?

Abstract: An application specific integrated circuit (ASIC) tangibly encodes a method for fast polynomial updates in fast Chase decoding of binary Bose-Chaudhuri-Hocquenghem (BCH) codes. The method includes the steps of using outputs of a syndrome-based hard-decision (HD) algorithm to find a Groebner basis for a solution module of a modified key equation, upon failure of HD decoding of a BCH codeword received by the ASIC from a communication channel; evaluating polynomials obtained from said Groebner basis at inverses of specified weak-bit locations; and transforming a Groebner basis for a set of flipped weak-bit locations (?1, . . . , ?r?1) to a Groebner basis for (?1, . . . , ?r), wherein ?r is a next weak-bit location, wherein r is a difference between a number of errors and a HD correction radius of the BCH codeword.

Abstract: A non-volatile memory device including: a page buffer configured to latch a plurality of page data constituting one bit page of a plurality of bit pages, and a control logic configured to compare results of a plurality of read operations performed in response to a high-priority read signal set to select one of a plurality of read signals included in the high-priority read signal set as a high-priority read signal, and determine a low-priority read signal corresponding to the high-priority read signal, wherein the high-priority read signal set is for reading high-priority page data, and the low-priority read signal is for reading low-priority page data.

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

Abstract: A memory system includes a data channel, a controller configured to output a request across the data channel, and a memory device configured to store data and corresponding first parity, perform a decoding operation on the data to generate second parity in response to receipt of the request across the data channel, generate a difference from the first parity and the second parity, compress the difference, and enable the controller to access the data and the compressed difference to satisfy the request.