Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Abstract: A partial pressure control system 45 includes two valves 2 which are branched from an operation gas supply pipe 44 and which variably control operation gas, pressure sensors 3 which are respectively connected to the each valves 2 in series and which detect pressure of the operation gas, and a controller 25 which proportionally controls the operation of the valves 2 based on detection result of the pressure sensors 3, thereby relatively controlling pressures P1 and P2 of the two valves. With this configuration, it is possible to reduce wastefull consumption of the operation gas, and to enhance the responsivity with respect to change of setting and the like.

Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Abstract: A ring mechanism, comprising a focus ring and divided cover rings surrounding a wafer W placed on a loading table (lower electrode) mounted in a processing chamber, wherein a ring-shaped clearance ?1 is provided between the divided rings to spread plasma to the radial outside of the focus ring to allow plasma to get therein, whereby a potential difference between the wafer W and the focus ring can be eliminated to prevent arc discharge by plasma from occurring between the wafer W and the focus ring.

Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Abstract: A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

Abstract: A partial pressure control system 45 includes two valves 2 which are branched from an operation gas supply pipe 44 and which variably control operation gas, pressure sensors 3 which are respectively connected to the each valves 2 in series and which detect pressure of the operation gas, and a controller 25 which proportionally controls the operation of the valves 2 based on detection result of the pressure sensors 3, thereby relatively controlling pressures P1 and P2 of the two valves. With this configuration, it is possible to reduce wastefull consumption of the operation gas, and to enhance the responsivity with respect to change of setting and the like.

Abstract: A partial pressure control system 45 includes two valves 2 which are branched from an operation gas supply pipe 44 and which variably control operation gas, pressure sensors 3 which are respectively connected to the each valves 2 in series and which detect pressure of the operation gas, and a controller 25 which proportionally controls the operation of the valves 2 based on detection result of the pressure sensors 3, thereby relatively controlling pressures P1 and P2 of the two valves. With this configuration, it is possible to reduce wastefull consumption of the operation gas, and to enhance the responsivity with respect to change of setting and the like.

Abstract: A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

Abstract: A plasma processing apparatus enabling reduction of the deposition of CF polymers in a processing chamber. The plasma processing apparatus (1) comprises a plasma processing vessel (3) having a large diameter at the lower portion and a small diameter at the upper portion to define a processing chamber (2) inside the vessel. The pressure in the processing chamber (2) is reduced to a predetermined vacuum atmosphere, and a processing gas containing a CF gas is introduced into the processing chamber (2) and changed to a plasma, and thereby a semiconductor wafer (34) is subjected to a desired microprocessing. A Y2O3 sprayed coating (41) is formed over a predetermined area of an inner wall (3b) of the plasma processing vessel (3) so that solid particles of CF polymers produced from the decomposition components of the CF gas by the plasma may be prevented from flying and adhering to the inner wall (3b) and the surface of the parts in the processing chamber, and the CF polymers may be prevented from depositing.

Abstract: A partial pressure control system 45 includes two valves 2 which are branched from an operation gas supply pipe 44 and which variably control operation gas, pressure sensors 3 which are respectively connected to the each valves 2 in series and which detect pressure of the operation gas, and a controller 25 which proportionally controls the operation of the valves 2 based on detection result of the pressure sensors 3, thereby relatively controlling pressures P1 and P2 of the two valves. With this configuration, it is possible to reduce wastefull consumption of the operation gas, and to enhance the responsivity with respect to change of setting and the like.

Abstract: A ring mechanism, comprising a focus ring and divided cover rings surrounding a wafer W placed on a loading table (lower electrode) mounted in a processing chamber, wherein a ring-shaped clearance ?1 is provided between the divided rings to spread plasma to the radial outside of the focus ring to allow plasma to get therein, whereby a potential difference between the wafer W and the focus ring can be eliminated to prevent arc discharge by plasma from occurring between the wafer W and the focus ring.

Abstract: A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and sub-surface is disposed in the worktable. A heat transfer medium made of conductive silicone rubber is interposed between the sub-surface and focus ring. A press mechanism presses the focus ring toward the sub-surface. The heat transfer medium improves thermal conductivity between the sub-surface and focus ring to be higher than in a case with no thermal transfer medium.

Abstract: A plasma processing method comprises the steps of supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of starting plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on the surface of the substrate.

Abstract: A plasma processing method comprises the steps of supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of starting plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on the surface of the substrate.