Patents by Inventor Jun Ooyabu

Jun Ooyabu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma processing method and apparatus for eliminating damages in a plasma process of a substrate
    Patent number: 6426477
    Abstract: A plasma processing method includes supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of staring plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on a surface of the substrate. A plasma processing apparatus is also provided.
    Type: Grant
    Filed: September 12, 2000
    Date of Patent: July 30, 2002
    Assignee: Tokyo Electron Limited
    Inventors: Chishio Koshimizu, Jun Ooyabu, Hideki Takeuchi, Akira Koshiishi
  • Worktable device and plasma processing apparatus for semiconductor process
    Publication number: 20020029745
    Abstract: A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and sub-surface is disposed in the worktable. A heat transfer medium made of conductive silicone rubber is interposed between the sub-surface and focus ring. A press mechanism presses the focus ring toward the sub-surface. The heat transfer medium improves thermal conductivity between the sub-surface and focus ring to be higher than in a case with no thermal transfer medium.
    Type: Application
    Filed: April 24, 2001
    Publication date: March 14, 2002
    Inventors: Toshifumi Nagaiwa, Shuei Sekizawa, Kosuke Imafuku, Jun Ooyabu
  • Plasma processing system
    Patent number: 6072147
    Abstract: A plasma processing system capable of carrying out a uniform processing is provided.According to the present invention, a substantially annular high-frequency antenna 156 of a predetermined number of turns, e.g., 1 turn, is provided in an opening 102b via a first shielding member 160 and a dielectric member 158. The capacitance of a variable capacitor 172 connected to ground is adjusted so that series resonance occurs at the mid point of the high-frequency antenna 156. With this construction, it is possible to form a desired electric field in a plasma producing space to produce a high-density plasma. In addition, a feeding member 126 is formed so that the substantially vertical cross-section thereof has a profile expressed by an exponential function r=f(L). Therefore, it is possible to supply a high-frequency power to an upper electrode without causing the electric breakdown and the damping of the high-frequency power.
    Type: Grant
    Filed: December 2, 1997
    Date of Patent: June 6, 2000
    Assignee: Tokyo Electron Limited
    Inventors: Akira Koshiishi, Jun Ooyabu
  • Upper electrode for manufacturing semiconductors
    Patent number: D412513
    Type: Grant
    Filed: July 28, 1997
    Date of Patent: August 3, 1999
    Assignee: Tokyo Electron Limited
    Inventor: Jun Ooyabu