Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, methods for depositing silicon nitride materials are provided and include heating a workpiece to a temperature of about 200° C. to about 250° C., exposing the workpiece to a deposition gas during a plasma-enhanced chemical vapor deposition process, and depositing a nitrogen-rich silicon nitride layer on the workpiece. The deposition gas contains a silicon precursor, a nitrogen precursor, and a carrier gas. A molar ratio of the silicon precursor to the nitrogen precursor to the carrier gas within the deposition gas is about 1:a range from about 4 to about 8:a range from about 20 to about 80, respectively.

Abstract: Embodiments herein include thin-film transistors (TFTs) including channel layer stacks with layers having differing mobilities. The TFTs disclosed herein transport higher total current through both the low mobility and the high mobility channel layers due to higher carrier density in high mobility channel layer and/or the high mobility channel layers, which increases the speed of response of the TFTs. The TFTs further include a gate structure disposed over the channel layer stack. The gate structure includes one or more gate electrodes, and thus the TFTs are top-gate (TG), double-gate (DG), or bottom-gate (BG) TFTs. The channel layer stack includes a plurality of layers with differing mobilities. The layers with differing mobilities confer various benefits to the TFT. The high mobility layer increases the speed of response of the TFT.

Abstract: Disclosed herein is a sub-pixel circuit for a display device. The sub-pixel circuit has a driving TFT and at least one switching TFT. The at least one switching TFT is an oxide TFT. The sub-pixel circuit additionally has at least one storage capacitor wherein the storage capacitor has a capacitance between about 1 fF and about 55 fF.

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack contains a silicon oxide layer disposed on a workpiece and a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer. The nitrogen-rich silicon nitride layer has a silicon concentration of about 20 at % to about 35 at %, a nitrogen concentration of about 40 at % to about 75 at %, and a hydrogen concentration of about 10 at % to about 35 at %. In one or more examples, the passivation film stack contains the silicon oxide layer, the nitrogen-rich silicon nitride layer, and a third layer containing any type of silicon nitride, such as nitrogen-rich silicon nitride and/or hydrogen-rich silicon nitride.

Abstract: Disclosed herein is a method for creating augmented reality content. The method for creating augmented reality content includes: extracting a target area, to which augmented reality content will be applied, from an object included in an image; providing a template for the creation of the augmented reality content that will be applied to the extracted target area; when a user inputs user content via the template, creating the augmented reality content by using the user content and the metadata of the target area; and performing rendering so that the created augmented reality content is applied to the target area of the image.

Abstract: The present invention relates to an articulated model registration method and apparatus which three-dimensionally restore an articulated model of a body, such as a hand, an upper body, and a whole body, from an image and to acquire a two-dimensional landmark from a two-dimensional image to generate and estimate a three-dimensional articulated model corresponding thereto.

Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack contains a silicon oxide layer disposed on a workpiece and a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer. The nitrogen-rich silicon nitride layer has a silicon concentration of about 20 at % to about 35 at %, a nitrogen concentration of about 40 at % to about 75 at %, and a hydrogen concentration of about 10 at % to about 35 at %. In one or more examples, the passivation film stack contains the silicon oxide layer, the nitrogen-rich silicon nitride layer, and a third layer containing any type of silicon nitride, such as nitrogen-rich silicon nitride and/or hydrogen-rich silicon nitride.

Abstract: The present disclosure relates to an electrode connection element, a light emitting apparatus including the same, and a method for manufacturing the light emitting apparatus, and more particularly, to an electrode connection element, a light emitting apparatus including the same, and a method for manufacturing the light emitting apparatus, which are for electrically connecting an electrode terminal and an external drive circuit. An electrode connection element according to an exemplary embodiment includes: an upper connection member coming into contact with an upper surface of an electrode terminal formed on a substrate; a lower connection member configured to support a lower surface of the substrate; a connection member configured to connect the upper connection member and the lower connection member to each other.

Abstract: The present disclosure relates to a power interface, and more particularly, to a power interface for electrically connecting an object to be tested and a test driving unit. The electric power interface in accordance with an exemplary embodiment includes: a support member; an elastic member fixed to the support member and configured to provide an elastic force in a vertical direction; a first connection terminal disposed on the elastic member; a second connection terminal electrically connected to the first connection terminal; and a flexible sheet has one side fixed to the elastic member and the other side fixed to the support member to restrict a deformation range of the elastic member.

Abstract: The present invention relates to an average-density-adjustable structure and more specifically provides a structure the average density of which is adjusted by changing the material of the structure and the size of a void formed therein and which can thereby float on the surface of or in a liquid and can easily bond with or change a material present in a gas or liquid by being equipped with a first material, which is one among an organic catalyst, an inorganic catalyst, a microorganism, and a biomolecule.

Abstract: The present invention relates to an articulated model registration method and apparatus which three-dimensionally restore an articulated model of a body, such as a hand, an upper body, and a whole body, from an image and to acquire a two-dimensional landmark from a two-dimensional image to generate and estimate a three-dimensional articulated model corresponding thereto.

Abstract: A method and system of sensing facial gestures are disclosed. The method of sensing facial gestures includes determining a basic database (DB) for sensing facial gestures of a user, estimating a head pose of the user, extracting a mesh model corresponding to the estimated head pose using at least one of a personalized DB and a general DB, and sensing the facial gestures using the extracted mesh model, and reflecting the sensed facial gestures to a virtual object.

Abstract: A fingerprint recognition based authentication method and apparatus is disclosed. The authentication apparatus may obtain an input fingerprint from a touch input of a user, determine an input number corresponding to the input fingerprint using preregistered fingerprint-number mapping information, and authenticate the user based on whether an input number sequence corresponding to an input fingerprint sequence is identical to a reference number sequence.

Abstract: The present invention provides a lighting apparatus which is easy in expandability of a plurality of lighting panels. The lighting apparatus according to the present invention may include: a plurality of lighting panels including an emission part having a light emitting device which emits light with a current flowing between a first electrode and a second electrode; and a panel connection means disposed between the plurality of lighting panels to electrically connect first and second electrodes between adjacent lighting panels. Each of the plurality of lighting panels may include first and second auxiliary wirings electrically connected between adjacent panel connection means.

Abstract: A method to reduce a neural network includes: adding a reduced layer, which is reduced from a layer in the neural network, to the neural network; computing a layer loss and a result loss with respect to the reduced layer based on the layer and the reduced layer; and determining a parameter of the reduced layer based on the layer loss and the result loss.

Abstract: A thin film transistor includes a substrate, a semiconductor layer on the substrate, a first insulating layer covering the substrate and the semiconductor layer, a first gate electrode on the first insulating layer and overlapping the semiconductor layer, a second insulating layer covering the first gate electrode and the first insulating layer, a second gate electrode on the second insulating layer and overlapping the semiconductor layer and the first gate electrode, a third insulating layer covering the second gate electrode, a first contact hole defined in the first insulating layer, the second insulating layer and the third insulating layer, and through which a portion of the semiconductor layer is exposed, and a source electrode and a drain electrode connected to the semiconductor layer through the first contact hole.

Abstract: A method of medical image registration with respect to a volume of interest (VOI) and an apparatus for performing the method are provided. In one embodiment, the method includes obtaining a first medical image of a selected section of the VOI, from a first medical apparatus, detecting a sectional image corresponding to the selected section from second medical images previously captured of the VOI, based on an anatomical feature appearing in the first medical image, mapping virtual coordinate schemes of the first and second medical images to produce a mapped virtual coordinate scheme, based on the detected sectional image and the first medical image, and tracking a movement of a section of the VOI captured by the first medical apparatus in the second medical images by using a mapped virtual coordinate scheme.

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.