Abstract: A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.

Abstract: The prevent invention discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is easy to carry out.

Abstract: The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then, a method for lateral wet etching or a method for lateral wet etching with mechanical stripping is applied for removing or stripping the sacrificing layer so as to separate the devices and a substrate. The separated devices are transferred to the transition substrate so as to meet the requirements for various products and applications.

Abstract: A method for manufacturing a flexible panel is disclosed, which has the following steps. First, a first substrate having a plurality of functional switches or conducting lines thereon is provided. Then, a second substrate is bonded on the functional switches or conducting lines, and the first substrate is thinned to a predetermined thickness subsequently. Afterwards, a flexible third substrate is adhered on the first substrate, wherein the first substrate is sandwiched between the second substrate and the third substrate. Finally, the second substrate is removed.

Abstract: The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then, a method for lateral wet etching or a method for lateral wet etching with mechanical stripping is applied for removing or stripping the sacrificing layer so as to separate the devices and a substrate. The separated devices are transferred to the transition substrate so as to meet the requirements for various products and applications.

Abstract: A method for laminating a material layer onto a transparent substrate. The method includes the steps of: providing a transparent substrate having an amorphous silicon layer formed thereon; forming an infrared absorbent metal layer on the material layer; inverting the material layer to laminate the metal layer onto the amorphous silicon layer; and exposing the metal layer and the amorphous silicon layer to infrared light to cause a metal silicide producing reaction and thus laminate the material layer and the transparent substrate.

Abstract: A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.

Abstract: A system and method for adjusting optical drives. Rotating disc datum, and leader pin datum, must be adjusted to a specific position during a packaging process. An autocollimator according to the present invention senses tilt and sway of the rotating disc, outputting a first bright spot through a switch box to a monitor. In addition, an optimum tilt angle of the optical pickup head is obtained by a reader through calculation by a host, outputting a second bright spot through the switch box to the monitor. Therefore, the first bright is coincided with the second bright spot by a adjustment mechanism and according to picture switch by the switch box, reading optimum tilt angle adjustment. Furthermore, individual tilt angle of each optical pickup head is calculated by a host for satisfying adjustment of different tilt angles with different optical paths in reading CD and DVD discs.