Abstract: A method of a first user equipment (UE) may comprise: receiving a downlink (DL) reference signal transmitted by a base station using a beam included in a beam candidate group to be used for sidelink (SL) communication with a second UE; measuring a DL reference signal received power (RSRP) of the DL reference signal; determining a transmit power of a beam included in the beam candidate group based on the measured DL RSRP; and transmitting SL data to the second UE with the determined transmit power.

Abstract: A method for fabricating a semiconductor device includes: forming a first oxide layer containing a first element over a first electrode layer; forming a second oxide layer containing a second element over the first oxide layer; forming a stacked structure in which a plurality of first oxide layers and a plurality of second oxide layers are alternately stacked by repeating the forming of the first oxide layer and the forming of the second oxide layer a plurality of times; and forming a second electrode layer over the stacked structure, wherein a thickness of a lowermost first oxide layer among the plurality of first oxide layers is greater than a thickness of each of other first oxide layers.

Abstract: An apparatus for manufacturing a display device includes a gas exhaust unit and a gas spray unit. The gas exhaust unit includes first and second sidewalls disposed side by side along a first direction, and an upper plate disposed on the first and second sidewalls, a first partition disposed between the first and second sidewalls and extending away from a lower surface of the upper plate in a second direction. The gas spray unit includes first and second spray portions spraying first and second gases in the second direction. The first partition includes first and second surfaces, a third surface connecting the first surface to the second surface, first and second horizontal openings formed at the first and second surfaces, a first vertical opening formed at the third surface, and a first sub exhaust path connecting the first and second horizontal openings, and the first vertical opening with each other.

Abstract: The present disclosure relates to a clock generator and a display device including the same. The clock generator includes a first clock generation circuit configured to output a clock, data, and a timing control signal; a first wiring through which the clock is serially transmitted; a second wiring through which the data is serially transmitted; a third wiring through which a pulse of the timing control signal is serially transmitted; a second clock generation circuit connected to the first clock generation circuit through the first wiring, the second wiring, and the third wiring and configured to generate pre-clocks in which phases are sequentially shifted based on the data and the clock; and a clock adjustment circuit configured to receive the pulse of the timing control signal and the pre-clock and output an output clock.

Abstract: The present disclosure relates to a transmission of an agricultural work vehicle, the transmission comprising: a pre-shift part for performing speed shifting on driving transmitted from an engine of an agricultural work vehicle; a clutch part connected to the pre-shift part so as to selectively output driving transmitted from the pre-shift part; an adjusting part connected to the clutch part so as to perform speed shifting on driving transmitted from the clutch part; and a subsequent shift part connected to the adjusting part so as to perform speed shifting on driving transmitted from the adjusting part.

Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

Abstract: Disclosed is a technique for switching from a master node to a secondary node in a communication system. A method of a first communication node may comprise: adding the first communication node as a primary secondary cell (PSCell) to a second communication node through dual connectivity (DC); generating a first user plane path for smart dynamic switching (SDS) and a first instance for supporting the first user plane path according to a request from the second communication node; transmitting information on the first user plane path and the first instance to a terminal; receiving user data based on the first user plane path from the terminal as the first instance; and transmitting the user data to a core network using the first user plane path.

Abstract: A method for producing a lead-free X-ray shielding material using bismuth iodide is provided, the method including a first step of producing porous PDMS (Polydimethylsiloxane); a second step of producing a mixed solution of BiI3 and THF; and a third step of immersing the porous PDMS into the mixed solution such that the BiI3 is loaded into the porous PDMS to produce a BiI3-PDMS composite material.

Abstract: A method and an apparatus are for providing information on management of vehicle. A method of operating an electronic apparatus for providing a user with information on management of a vehicle includes generating a management scenario for the vehicle, requesting the user to approve the management scenario, and outputting management guide information based on progress of the user's exiting and progress of the management scenario.

Abstract: The present invention relates to a novel indole derivative and a use thereof. The novel indole derivative according to the present invention traps methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.

Abstract: The present invention relates to a composition for preventing, improving, or treating diseases related to advanced glycation end products, comprising an indole derivative or a pharmaceutically acceptable salt thereof. Specifically, the composition of the present invention possesses the effect of trapping methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.

Abstract: There is provided a ferritic lightweight steel which contains 2.0 to 3.0 wt % manganese (Mn), 5.0 to 6.0 wt % aluminum (Al) and 0.1 to 0.3 wt % carbon (C) and has a tensile strength of 900 MPa to 1,108 MPa. The lightweight steel includes ferrite-austenite dual grains as a result of performing low-temperature tempering-induced partitioning (LTP) at 300° C. for 10 minutes after isothermal annealing.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: Provided is an unconstrained vibration damping metal sheet with foam pores. The unconstrained vibration damping metal sheet of the present invention comprises: a metal sheet; an organic-inorganic pretreatment layer containing an acrylic resin formed on the metal sheet; and a foam resin layer formed on the pretreatment layer, the foam resin layer containing, based on weight % thereof, a thermoplastic polyvinyl chloride resin: 40-80%, a plasticizer: 5-40%, a foaming agent: 0.1-10%, an oxide-based crosslinker: 1-4%, and spherical silica: 1-10%.

Abstract: A thrust enhancing device is disclosed. The thrust enhancing device enhances thrust of a thrust generation part in a state coupled to the thrust generation part configured to obtain a propulsive force by using a reaction force of a fluid. The thrust enhancing device includes a venturi part configured to receive a basic fluid allowed to flow by the thrust generation part and allow the basic fluid to pass through the inside thereof, and an ejection induction part disposed in an inner flow field of the venturi part and configured to linearize a flow of a fluid to be ejected to the outside of the venturi part.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.

Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

Abstract: Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.

Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.