Abstract: Integrated circuit devices including standard cells are provided. The standard cells may include a first vertical field effect transistor (VFET) having a first conductivity type, and a second VFET having a second conductivity type. The first VFET may include a first top source/drain region, a first channel region, and a first bottom source/drain region. The second VFET may include a second top source/drain region, a second channel region, and a second bottom source/drain region. The standard cells may also include a conductive line that is electrically connected to the first top source/drain region or the first bottom source/drain region and is electrically connected to the second bottom source/drain region. The standard cell may be configured to output an output signal thereof through the conductive line.

Abstract: Integrated circuit devices including standard cells are provided. The standard cells may include a P-type vertical field effect transistor (VFET) including a first channel region and a first top source/drain region sequentially stacked on a substrate in a vertical direction, an N-type VFET including a second channel region and a second top source/drain region sequentially stacked on the substrate in the vertical direction, and a top contact layer contacting both the first top source/drain region and the second top source/drain region.

Abstract: Integrated circuit devices including standard cells are provided. The standard cells may a first vertical field effect transistor (VFET) having a first conductivity type, a second VFET having a second conductivity type, and a third VFET having the first conductivity type. The first VFET may include a first channel region protruding from a substrate, and the first channel region has a first length. The second VFET may include a second channel region protruding from the substrate, and the second channel region has a second length. The third VFET may include a third channel region protruding from the substrate. The first channel region, the second channel region, and third channel region may be spaced apart from each other and may be sequentially arranged along a direction, and the second length may be greater than 1.5 times the first length.

Abstract: A semiconductor device includes a substrate having a plurality of active patterns. A plurality of gate electrodes intersects the plurality of active patterns. An active contact is electrically connected to the active patterns. A plurality of vias includes a first regular via and a first dummy via. A plurality of interconnection lines is disposed on the vias. The plurality of interconnection lines includes a first interconnection line disposed on both the first regular via and the first dummy via. The first interconnection line is electrically connected to the active contact through the first regular via. Each of the vias includes a via body portion and a via barrier portion covering a bottom surface and sidewalls of the via body portion. Each of the interconnection lines includes an interconnection line body portion and an interconnection line barrier portion covering a bottom surface and sidewalls of the interconnection line body portion.

Abstract: An integrated circuit having a vertical transistor includes first through fourth gate lines extending in a first direction and sequentially arranged in parallel with each other, a first top active region over the first through third gate lines and insulated from the second gate line, and a second top active region. The first top active region forms first and third transistors with the first and third gate lines respectively. The second top active region is over the second through fourth gate lines and insulated from the third gate line. The second top active region forms second and fourth transistors with the second and fourth gate lines respectively.

Abstract: In one embodiment, the standard cell includes first and second active regions defining an intermediate region between the first and second active regions; and first, second and third gate lines crossing the first and second active regions and crossing the intermediate region. The first gate line is divided into an upper first gate line and a lower first gate line by a first gap insulating layer in the intermediate region, the second gate line is undivided, and the third gate line is divided into an upper third gate line and a lower third gate line by a second gap insulating layer in the intermediate region.

Abstract: Provided is an integrated circuit including a plurality of standard cells each including a front-end-of-line (FEOL) region and a back-end-of-line (BEOL) region on the FEOL region, the FEOL region including at least one gate line extending in a first horizontal direction. A BEOL region of a first standard cell among the plurality of standard cells includes an eaves section not overlapping an FEOL region of the first standard cell in a vertical direction, the eaves section protruding in a second horizontal direction perpendicular to the first horizontal direction.

Abstract: Provided is an integrated circuit which includes: a plurality of conductive lines extending in a first horizontal direction on a plane separate from a gate line, and including first and second conductive lines; a source/drain contact having a bottom surface connected to a source/drain region, and including a lower source/drain contact and an upper source/drain contact which are connected to each other in a vertical direction; and a gate contact having a bottom surface connected to the gate line, and extending in the vertical direction, in which the upper source/drain contact is placed below the first conductive line, and the gate contact is placed below the second conductive line. A top surface of the lower source/drain contact may be larger than a bottom surface of the upper source/drain contact.

Abstract: An integrated circuit having a vertical transistor includes first through fourth gate lines extending in a first direction and sequentially arranged in parallel with each other, a first top active region over the first through third gate lines and insulated from the second gate line, and a second top active region. The first top active region forms first and third transistors with the first and third gate lines respectively. The second top active region is over the second through fourth gate lines and insulated from the third gate line. The second top active region forms second and fourth transistors with the second and fourth gate lines respectively.

Abstract: An integrated circuit includes: a lower layer including first and second lower patterns extending in a first direction; a first via arranged on the first lower pattern, and a second via arranged on the second lower pattern; a first upper pattern arranged on the first via; and a second upper pattern arranged on the second via, a first color is assigned to the first upper pattern, a second color is assigned to the second upper pattern, the first and second upper patterns are adjacent to each other in a second direction, and the first via is arranged in a first edge region of the first lower pattern, the first edge region being farther away from the second lower pattern than a second edge region of the first lower pattern, the second edge region being opposite to the first edge region.

Abstract: Integrated circuit devices are provided. The devices may include a substrate including a first region, a second region and a boundary region between the first and second regions. The first and second regions may be spaced apart from each other in a first horizontal direction. The devices may also include a first latch on the first region, a second latch on the second region, and a conductive layer extending in the first horizontal direction and crossing over the boundary region. The first latch may include a first vertical field effect transistor (VFET), a second VFET, a third VFET, and a fourth VFET. The second latch may include a fifth VFET, a sixth VFET, a seventh VFET, and an eighth VFET. The first and seventh VFETs may be arranged along the first horizontal direction. Portions of the conductive layer may include gate electrodes of the first and seventh VFETs, respectively.

Abstract: A semiconductor device including: a conductor disposed on a substrate; a first contact disposed on the conductor; a second contact having a first portion disposed on the first contact and a second portion protruded away from the first portion in a direction parallel to the substrate, wherein the first and second contacts are disposed in an insulating layer; a via disposed on the insulating layer and the second portion of the second contact; and a metal line disposed on the via.

Abstract: A method is provided. The method includes forming a first to third gate lines on a substrate, the second gate line formed between the first and third gate lines; forming a gate isolation region to cut the first to third gate lines into two first sub gate lines, two second sub gate lines and two third sub gate lines, respectively; forming a first gate contact on one of the two first sub gate lines; forming a second gate contact on the two second sub gate lines; forming a third gate contact on one of the two third sub gate lines; forming a first metal line to connect the first and third gate contacts; and forming a second metal line. The first to third gate lines extend in a first direction, and the gate isolation region extends in a second direction different from the first direction.

Abstract: In one embodiment, the standard cell includes first and second active regions defining an intermediate region between the first and second active regions; and first, second and third gate lines crossing the first and second active regions and crossing the intermediate region. The first gate line is divided into an upper first gate line and a lower first gate line by a first gap insulating layer in the intermediate region, the second gate line is undivided, and the third gate line is divided into an upper third gate line and a lower third gate line by a second gap insulating layer in the intermediate region.

Abstract: An integrated circuit includes a standard cell. The standard cell may include a plurality of gate lines and a plurality of first wirings. The plurality of first wirings may include a clubfoot structure conductive pattern that includes a first conductive pattern and a second conductive pattern spaced apart from each other. Each of the first conductive pattern and the second conductive pattern may include a first line pattern extending in a first direction and a second line pattern protruding from one end of the first line pattern in a direction perpendicular to the first direction. The plurality of gate lines may be spaced apart from each other by a first pitch in the first direction, and the plurality of second wirings may be spaced apart from each other by a second pitch in the first direction. The first pitch may be greater than the second pitch.

Abstract: An integrated circuit includes a first cell arranged in a first row extending in a first horizontal direction, a second cell arranged in a second row adjacent to the first row, and a third cell continuously arranged in the first row and the second row. The first cell and the second cell comprise respective portions of a first power line extending in the first horizontal direction, and the third cell includes a second power line electrically connected to the first power line and extending in the first horizontal direction in the first row.

Abstract: An integrated circuit includes: a lower layer including first and second lower patterns extending in a first direction; a first via arranged on the first lower pattern, and a second via arranged on the second lower pattern; a first upper pattern arranged on the first via; and a second upper pattern arranged on the second via, a first color is assigned to the first upper pattern, a second color is assigned to the second upper pattern, the first and second upper patterns are adjacent to each other in a second direction, and the first via is arranged in a first edge region of the first lower pattern, the first edge region being farther away from the second lower pattern than a second edge region of the first lower pattern, the second edge region being opposite to the first edge region.

Abstract: A semiconductor device includes a substrate having a plurality of active patterns. A plurality of gate electrodes intersects the plurality of active patterns. An active contact is electrically connected to the active patterns. A plurality of vias includes a first regular via and a first dummy via. A plurality of interconnection lines is disposed on the vias. The plurality of interconnection lines includes a first interconnection line disposed on both the first regular via and the first dummy via. The first interconnection line is electrically connected to the active contact through the first regular via. Each of the vias includes a via body portion and a via barrier portion covering a bottom surface and sidewalls of the via body portion. Each of the interconnection lines includes an interconnection line body portion and an interconnection line barrier portion covering a bottom surface and sidewalls of the interconnection line body portion.

Abstract: An integrated circuit includes first and second active regions extending in a first direction, a first gate line extending in a second direction substantially perpendicular to the first direction and crossing the first and second active regions, and a first contact jumper including a first conductive pattern intersecting the first gate line above the first active region and a second conductive pattern extending in the second direction above the first gate line and connected to the first conductive pattern.

Abstract: An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.