Abstract: A device includes an active region formed of a semiconductor material, a gate dielectric at a surface of the active region, and a gate electrode over the gate dielectric. A first source/drain region and a second source/drain region are on opposite sides of the gate electrode. A Contact Etch Stop Layer (CESL) is over the first and the second source/drain regions. An Inter-Layer Dielectric (ILD) includes a top surface substantially level with a top surface of the gate electrode. A first contact plug is over and electrically connected to the first source/drain region. A second contact plug is over and aligned to the second source/drain region. The second contact plug and the second source/drain region are spaced apart from each other by a portion of the first CESL to form a capacitor.

Abstract: An apparatus includes a level shifter and a switching circuit. The level shifter includes an input, a first output, and second output having a logic value complementary to a logic value of the first output. The switching circuit includes a data input, a feedback input coupled to the second output of the level shifter, and an output coupled to the input of the level shifter. The switching circuit is configured to selectively latch, based on a select signal, a logic state of the level shifter at the second output.

Abstract: In a digital memory with an array of bit cells coupled to word lines and bit lines, each bit cell having cross coupled inverters isolated from bit lines by passing gate transistors until addressed, some or all of the bit cells are switchable between a sleep mode and a standby mode in response to a control signal. A bit line bias circuit controls the voltage at which the bit lines are caused to float when in the sleep mode. A pull-up transistor for each bit line BL or BLB in a complementary pair has a conductive channel coupled to a positive supply voltage and a gate coupled to the other bit line in the pair, BLB or BL, respectively. A connecting transistor also can be coupled between the bit lines of the complementary pair, bringing the floating bit lines to the supply voltage less a difference voltage ?V.

Abstract: The present application discloses a memory circuit having a first data line configured to carry a first data line signal and a second data line configured to carry a second data line signal. Further, a first driver is coupled to the first data line and the second data line and configured to establish a first current path for the first data line responsive to the second data line signal. Similarly, a second driver is coupled to the first data line and the second data line and configured to establish a second current path for the second data line responsive to the first data line signal. The memory circuit further has a first driver enabling line configured to selectively enable the first driver and a second driver enabling line configured to selectively enable the second driver.

Abstract: A circuit includes a failure address register configured to store a first row address, a row address modifier coupled to the failure address register, wherein the row address modifier is configured to modify the first row address received from the failure address register to generate a second row address. A first comparator is configured to receive and compare the first row address and a third row address. A second comparator is configured to receive and compare the second row address and the third row address. The first and the second row addresses are failed row addresses in a memory.

Abstract: The present application discloses a memory circuit having a first data line configured to carry a first data line signal and a second data line configured to carry a second data line signal. Further, a first driver is coupled to the first data line and the second data line and configured to establish a first current path for the first data line responsive to the second data line signal. Similarly, a second driver is coupled to the first data line and the second data line and configured to establish a second current path for the second data line responsive to the first data line signal. The memory circuit further has a first driver enabling line configured to selectively enable the first driver and a second driver enabling line configured to selectively enable the second driver.

Abstract: A source driving apparatus of a display is disclosed. The source driving apparatus includes a digital-to-analog converter, a selecting signal generator and a voltage selector. The digital-to-analog converter receives a first part display signal of a display signal and a plurality of gamma voltages and selects a first selecting gamma voltage and a second selecting gamma voltage within the gamma voltages according to the first part display signal. The selecting signal generator receives a second part display signal of the display signal expect the first part display signal and a plurality of pulse-width-modulation (PWM) signals. The selecting signal generator selects one of the PWM signals to generate a selecting signal according to the second part display signal. The voltage selector outputs the first selecting gamma voltage or the second selecting gamma voltage according to a pulse width of the selecting signal.

Abstract: A method for cancelling the deviation voltage of a source driver of a LCD is disclosed. The method includes measuring an effective load resistor and an effective load capacitor of a panel of the LCD against the source driver, computing a lowest valid frequency of the chopper circuit according to the effective load resistor and the effective load capacitor, and adjusting the switching frequency of the chopper circuit according to the lowest valid frequency to filter out high frequency components of signals outputted by the source driver via the panel, so as to cancel the deviation voltage.

Abstract: A high speed memory system includes a plurality of memory devices; a plurality of buffers; and a memory controller. The plurality of buffers is respectively coupled to the plurality of memory devices. The memory controller is coupled to the plurality of buffers, for generating a plurality of control signal to the plurality of buffers and sequentially controlling access to the plurality of memory devices in a time-sharing manner according to a clock.

Abstract: A memory architecture of a display device including a display data memory block and a processor is provided. The display data memory block includes N sub-memories and N arbiters respectfully coupled to the N sub-memories, wherein N is a positive integer larger than 1. The processor is used for respectfully and continuously outputting corresponding N control signals and N address signals to the N arbiters. After receiving the corresponding control signals, the N arbiters respectfully output the corresponding address signals to corresponding sub-memories, such that the N sub-memories simultaneously access data respectfully according to the N address signals.

Abstract: A memory and control apparatus and a memory for a display device are provided. The memory and control apparatus includes a memory, a sense-latch circuit, and a timing and memory controlling apparatus. The memory is used for storing data. The memory has a display data bus and a general data bus. The sense-latch circuit is used for sensing and latching the data on the display data bus. The timing and memory controlling apparatus is used for controlling the memory, so as to make the display data represented on the display data bus, and to make the sense-latch circuit outputting the data on the display data bus. When the display device intends to store the data in the memory, the data on the general data bus is stored to the memory.

Abstract: To reduce power consumption and enhance memory-data transmission efficiency, the present invention provides a circuit system for reading memory data for a display device includes a memory, a data bus and a latch circuit. The memory is used for storing pixel data corresponding to a plurality of pixels and outputting the pixel data according to an output control signal. The data bus is used for transferring the pixel data outputted by the memory. The latch circuit is coupled to the data bus and used for receiving the pixel data from the data bus. The latch circuit includes a plurality of latchers and a plurality of logic circuits. The plurality of latchers is used for storing the pixel data. The plurality of logic circuits is used for performing logic operations on the pixel data stored in the plurality of latchers according to a reading control signal.