Abstract: A memory device using error correcting code and a system including the same are provided. The memory device includes a memory cell array including a plurality of bit lines and a plurality of memory cells; an access block for accessing the memory cell array; and a controller block for receiving a first operation command signal, dividing the first operation command signal into at least two paths pulse signals corresponding to at least two paths, based on a pre-determined criterion, and then supplying the at least two path pulse signals to the access block. The access block operates based on an output signal of the controller block.

Abstract: A memory device using error correcting code and a system including the same are provided. The memory device includes a memory cell array including a plurality of bit lines and a plurality of memory cells; an access block for accessing the memory cell array; and a controller block for receiving a first operation command signal, dividing the first operation command signal into at least two paths pulse signals corresponding to at least two paths, based on a pre-determined criterion, and then supplying the at least two path pulse signals to the access block. The access block operates based on an output signal of the controller block.

Abstract: In a method for supplying power supply voltages in a semiconductor memory device a first source voltage is applied to a memory cell of a memory cell array as a cell array internal voltage for operating a sense amplifier coupled to the memory cell. A second source voltage is applied as a word line drive voltage of the memory cell array. The second source voltage has a voltage level higher than a voltage level of the first source voltage. The second source voltage is also applied as a drive voltage of an input/output line driver to drive write data into an input/output line in a write operating mode.

Abstract: A refresh method for a semiconductor memory device having more than one bank group is provided. The refresh method may include applying an all-refresh command to one the bank groups, determining if one of the bank groups includes a bank undergoing a refresh operation when the all-refresh command is received, and performing an all-refresh operation based on the determination.

Abstract: A Voltage Controlled Oscillator (VCO) includes a plurality of oscillation units connected in cascade to form a chain; and a plurality of current source sections operatively connected to the oscillation units, the current source sections each being configured to control current provided to the oscillation units, wherein each of the current source sections includes: at least one fixed current source configured to perform a current control of a corresponding oscillation unit by using a fixed voltage; and at least one variable current source configured to perform a current control of the corresponding oscillation unit by using a variable voltage.

Abstract: In a method for supplying power supply voltages in a semiconductor memory device a first source voltage is applied to a memory cell of a memory cell array as a cell array internal voltage for operating a sense amplifier coupled to the memory cell. A second source voltage is applied as a word line drive voltage of the memory cell array. The second source voltage has a voltage level higher than a voltage level of the first source voltage. The second source voltage is also applied as a drive voltage of an input/output line driver to drive write data into an input/output line in a write operating mode.

Abstract: A Voltage Controlled Oscillator (VCO) includes a plurality of oscillation units connected in cascade to form a chain; and a plurality of current source sections operatively connected to the oscillation units, the current source sections each being configured to control current provided to the oscillation units, wherein each of the current source sections includes: at least one fixed current source configured to perform a current control of a corresponding oscillation unit by using a fixed voltage; and at least one variable current source configured to perform a current control of the corresponding oscillation unit by using a variable voltage.

Abstract: A refresh method for a semiconductor memory device having more than one bank group is provided. The refresh method may include applying an all-refresh command to one the bank groups, determining if one of the bank groups includes a bank undergoing a refresh operation when the all-refresh command is received, and performing an all-refresh operation based on the determination.

Abstract: A semiconductor device includes an ODT (on die termination) pin coupled to a tester that applies a tester termination control signal thereon. The semiconductor device also includes a measure path that transmits the tester termination control signal from the ODT pin to an ODT circuit during measurement of a parameter of the semiconductor device. The ODT pin and the measure path advantageously allow for control of the ODT circuit by the tester for more accurate parameter characterization.

Abstract: A semiconductor device includes an ODT (on die termination) pin coupled to a tester that applies a tester termination control signal thereon. The semiconductor device also includes a measure path that transmits the tester termination control signal from the ODT pin to an ODT circuit during measurement of a parameter of the semiconductor device. The ODT pin and the measure path advantageously allow for control of the ODT circuit by the tester for more accurate parameter characterization.