Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A method of inactivating harmful microorganisms of a filtration medium including pathogenic bacteria and viruses is disclosed which includes placing a predetermined quantity of a hybridized fluorescent silk on to a filtration medium, applying light for a predetermined amount of time to the placed quantity of the hybridized fluorescent silk, and passing a fluid through the medium, wherein the fluid is one of substantially air or substantially water, wherein the hybridized fluorescent silk is one of KillerRed, SuperNova, KillerOrange, Dronpa, TurboGFP, mCherry, or any combination thereof.

Abstract: The present disclosure relates to a vehicle door coupling device, and more specifically, to a vehicle door coupling device for mechanically coupling together a first member having a first hole and a second member having a second hole at a position corresponding to the first hole.

Abstract: A method of disinfection of a surface of a subject of harmful microorganisms including pathogenic bacteria and viruses upon visible light irradiation using a hybridized fluorescent silk is provided. The method includes placing a predetermined quantity of the hybridized fluorescent silk i) directly on to a skin surface of a subject; or ii) on a medium and then placing the medium on the skin surface of the subject. The method further includes applying light in the visible spectrum for a predetermined amount of time to the placed quantity of hybridized fluorescent silk, wherein the hybridized fluorescent silk is one of KillerRed, SuperNova, KillerOrange, Dronpa, TurboGFP, mCherry, or any combination thereof.

Abstract: The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.

Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

Abstract: Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.

Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

Abstract: A user terminal according to an embodiment may include a processor configured to: based on accessing an instant messaging server with a user account and the user account being a general account, display a general interface for a plurality of services provided to the general account; and based on the user account being a protected account, display a protected interface in which at least some of the plurality of services provided to the general account is restricted.

Abstract: A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.

Abstract: An embodiment of the present invention relates to a secondary battery comprising: an electrode assembly which has an anode tab formed at one end thereof and a cathode tab formed at the other end thereof; a case in which the electrode assembly is received and which is open at both opposite ends thereof; and a pair of cap assemblies which are coupled to the respective open ends of the case.

Abstract: An embodiment of the present invention relates to a secondary battery comprising: an electrode assembly which has an anode tab formed at one end thereof and a cathode tab formed at the other end thereof; a case in which the electrode assembly is received and which is open at both opposite ends thereof; and a pair of cap assemblies which are coupled to the respective open ends of the case. According to the present invention, the cap assemblies are formed at the opposite sides of the case and thus cathode and anode terminals of the cap assemblies can have the same direction as the cathode and anode tabs of the electrode assembly, which makes it possible to simplify the shape of and minimize the length of a current collector.

Abstract: An embodiment of the present invention relates to a secondary battery comprising: an electrode assembly which has an anode tab formed at one end thereof and a cathode tab formed at the other end thereof; a case in which the electrode assembly is received and which is open at both opposite ends thereof; and a pair of cap assemblies which are coupled to the respective open ends of the case. According to the present invention, the cap assemblies are formed at the opposite sides of the case and thus cathode and anode terminals of the cap assemblies can have the same direction as the cathode and anode tabs of the electrode assembly, which makes it possible to simplify the shape of and minimize the length of a current collector.

Abstract: A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.

Abstract: A method for processing an abusing message in an anonymous chatroom includes providing a rule set of a latest version to an administrator terminal of the anonymous chatroom when the administrator terminal logs in to an account through a message application or enters the anonymous chatroom, receiving a new message in the anonymous chatroom, providing the new message to the administrator terminal, receiving a request for hiding the new message from the administrator terminal when the new message is determined to be an abusing message based on at least one of a spam keyword and the rule set stored in the administrator terminal, and transmitting a command to hide the new message to a user terminal that joins the anonymous chatroom according to the request for hiding the new message.

Abstract: Provided are a method and apparatus for managing an abusing message based on an interface. The method of managing the abusing message includes storing at least one of a rule set and a spam keyword for an abusing message, receiving a new message transmitted to an anonymous chatroom, determining the new message as the abusing message based on the at least one of the rule set and the spam keyword, and hiding the abusing message in a chat window. The administrator terminal is configured to set activation of a function for hiding the abusing message through an interface distinguished from the chat window.

Abstract: Disclosed are a silicon carbide powder and a method of manufacturing a silicon carbide ingot using the same. More particularly, the silicon carbide powder includes carbon and silicon and has a particle circularity of 0.4 to 0.9 measured through 2D image analysis.

Abstract: Disclosed are a silicon carbide powder, a method of manufacturing a silicon carbide powder, and a silicon carbide wafer. More particularly, the silicon carbide powder includes carbon and silicon and in the silicon carbide powder, O1s/C1s of a surface measured by X-ray photoelectron spectroscopy is 0.28 or less.

Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

Abstract: The present disclosure provides a photocurable composition, which has excellent coatability and is capable of providing a coating layer having excellent surface quality and thickness uniformity, a coating layer including a cured product of the photocurable composition, and a substrate for a semiconductor process including the coating layer.