Abstract: Embodiments of a linear voltage regulator are described. In one embodiment, the linear voltage regulator includes a PMOS low drop-out (LDO) regulator configured to convert an input voltage to a regulated voltage, a charge pump connected to the PMOS LDO regulator and configured to amplify the regulated voltage into an amplified voltage, and an NMOS LDO regulator connected to the charge pump and configured to convert the amplified voltage into an output voltage. Other embodiments are also described.

Abstract: Embodiments of a voltage reference circuit are described. In one embodiment, a voltage reference circuit includes a startup circuit configured to generate a startup current and to be turned off in response to a comparison between the startup current and a current threshold, an amplifier connected to the startup circuit and configured to generate an amplified current using a positive current feedback loop in response to the startup current, and a proportional to absolute temperature (PTAT) current generator configured to generate a temperature-independent reference voltage in response to the startup current and the amplified current. Other embodiments are also described.

Abstract: Embodiments of a power-on and brown-out detector are described. In an embodiment, a power-on and brown-out detector for a power supply includes a power-on detection module, a brown-out detection module, and a logic module. The power-on detection module is connected to the power supply and is configured to generate a power-on signal in response to a voltage increase of the power supply. The brown-out detection module is connected to the power supply and is configured to generate a brown-out signal in response to a voltage charge by the power supply and a subsequent voltage decrease of the power supply. The logic module is configured to generate a control signal in response to the power-on signal and the brown-out signal. The power-on detection module is further configured to be activated or deactivated by the control signal. Other embodiments are also described.

Abstract: A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.

Abstract: A block power switch may be embedded with electrostatic discharge (ESD) protection circuitry. A transistor portion of the block power switch may he allocated to act as part of ESD protection circuitry and may be combined with an RC clamp to provide ESD protection. Adaptive body biasing (ABB) may be applied to the block power switch to reduce on-chip area and decrease leakage current of the block power switch.

Abstract: A system and method to regulate voltage is disclosed. In a particular embodiment, a voltage regulator includes an error amplifier, a voltage buffer responsive to the error amplifier, and a first transistor responsive to the voltage buffer and coupled to a voltage supply source. A second transistor is coupled to the voltage supply source and further coupled to an output node. A third transistor is coupled to the first transistor and has a gate coupled to a capacitor. The capacitor is coupled to a node between the error amplifier and the voltage buffer.

Abstract: A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.

Abstract: A stacked integrated circuit (IC) device includes a semiconductor IC having an active face, and an interconnect structure. The active face receives a regulated voltage from a voltage regulator (MEG). An active portion of the VREG, which supplies the regulated voltage to the semiconductor IC is coupled to the interconnect structure. A packaging substrate includes one or more inductors including a first set of through vias. The first set of through vias are coupled to the interconnect structure and cooperate with the active portion to provide the regulated voltage for the semiconductor IC. The IC also includes a printed circuit board (PCB) coupled to the packaging substrate. The PCB includes a second set of through vias coupled to the first set of through vias. The IC also includes one or more conducting paths on the PCB. The conducting path(s) couple together at least two through vias of the second set of through vias.

Abstract: A stacked integrated circuit includes a first tier IC and a second tier IC. Active faces of the first tier IC and the second tier IC face each other. An interconnect structure, such as microbumps, couples the first tier IC to the second tier IC. An active portion of a voltage regulator is integrated in the first semiconductor IC and coupled to passive components (for example a capacitor or an inductor) embedded in a packaging substrate on which the stacked IC is mounted. The passive components may be multiple through vias in the packaging substrate providing inductance to the active portion of the voltage regulator. The inductance provided to the active portion of the voltage regulator is increased by coupling the through via in the packaging substrate to through vias in a printed circuit board that the packaging substrate is mounted on.

Abstract: Systems and method for a capacitor-less Low Dropout (LDO) voltage regulator. An error amplifier is configured to amplify a differential between a reference voltage and a regulated LDO voltage. Without including an external capacitor in the LDO voltage regulator, a Miller amplifier is coupled to an output of the error amplifier, wherein the Miller amplifier is configured to amplify a Miller capacitance formed at an input node of the Miller amplifier. A capacitor coupled to the output of the error amplifier creates a positive feedback loop for decreasing a quality factor (Q), such that system stability is improved.

Abstract: A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.

Abstract: A method of supplying voltage to a die mounted on a packaging substrate includes mounting an active portion of a voltage regulator on the packaging substrate. The method also includes coupling the active portion of the voltage regulator to at least one passive component at least partially embedded in the packaging substrate and coupling the die to the at least one passive component. Mounting the active portion of the voltage regulator includes mounting the die on the packaging substrate where the die includes the active portion of the voltage regulator.

Abstract: A semiconductor packaging system has a packaging substrate into which inductors and/or capacitors are partially or completely embedded. An active portion of a voltage regulator is mounted on the packaging substrate and supplies regulated voltage to a die also mounted on the packaging substrate. Alternatively, the active portion of the voltage regulator is integrated into the die the voltage regulator supplies voltage to. The voltage regulator cooperates with the inductors and/or capacitors to supply voltage to the die. The inductors may be through vias in the packaging substrate. For additional inductance, through vias in a printed circuit board on which the packaging substrate is mounted may couple to the through vias in the packaging substrate.