Abstract: A light-emitting device includes a package and at least one light-emitting element. The package includes a concave portion which has a bottom surface. The bottom surface includes sides, package distances between opposite sides among the sides, a longest package distance among the package distances, a lower side among the sides, and an upper side among the sides opposite to the lower side. The at least one light-emitting element is arranged on the bottom surface of the concave portion and has a polygonal shape viewed along a front direction. The polygonal shape has light-emitting element distances between vertexes of the polygonal shape and has a longest light-emitting element distance among the light-emitting element distances. The at least one light-emitting element is arranged such that a light-emitting element lateral line along the longest light-emitting element distance is substantially parallel to a package lateral line along the longest package distance.

Abstract: A method of manufacturing a light emitting element includes providing a wafer having a substrate and a semiconductor layered body provided on an upper surface of the substrate, irradiating the substrate with laser light from a side of a lower surface opposite to the upper surface of the substrate to form modified regions in the substrate, and dividing the wafer into light emitting elements at the modified regions as a starting point. The semiconductor layered body includes a first p-type semiconductor layer made of a nitride semiconductor and provided on the upper surface of the substrate, an n-type semiconductor layer made of a nitride semiconductor and provided on the first p-type semiconductor layer, an active layer made of a nitride semiconductor and provided on the n-type semiconductor layer, and a second p-type semiconductor layer made of a nitride semiconductor and provided on the active layer.

Abstract: Each of a plurality of light emitting elements has a polygonal shape with five or more corners. An interior angle at each of the corners is less than 180°. The plurality of light emitting elements include a first light emitting element having a first bottom surface, a first top surface opposite to the first bottom surface, and a first lateral side surface between the first bottom surface and the first top surface. The second light emitting element has a second bottom surface, a second top surface opposite to the second bottom surface, and a second lateral side surface between the second bottom surface and the second top surface. The second lateral side surface is provided not to oppose to the first lateral side surface in substantially parallel.

Abstract: A light emitting device includes a package and at least one light emitting element. The package includes a recess portion which has a bottom surface, an opening on a front side opposite to the bottom surface in a front direction vertical to the bottom surface, and an inner peripheral wall connecting the bottom surface and the front side. The bottom surface has distances between opposite sides of the bottom surface and has a longest distance among the distances. The at least one light emitting element is disposed on the bottom surface of the recess portion and has a polygonal shape which has five or more sides and which has a longest diagonal line viewed along the front direction. Each internal angle of the polygonal shape is less than 180°. The longest diagonal line of the polygonal shape is parallel to a lateral line along the longest distance.

Abstract: A light-emitting device includes a package and at least one light-emitting element. The package includes a concave portion which has a bottom surface. The bottom surface includes sides, package distances between opposite sides among the sides, a longest package distance among the package distances, a lower side among the sides, and an upper side among the sides opposite to the lower side. The at least one light-emitting element is arranged on the bottom surface of the concave portion and has a polygonal shape viewed along a front direction. The polygonal shape has light-emitting element distances between vertexes of the polygonal shape and has a longest light-emitting element distance among the light-emitting element distances. The at least one light-emitting element is arranged such that a light-emitting element lateral line along the longest light-emitting element distance is substantially parallel to a package lateral line along the longest package distance.

Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

Abstract: A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.

Abstract: A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing.

Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract: In detection of a test substance including a biomolecule by utilizing photocurrent detection of dye sensitization, disclosed is a detection method in which process of the photocurrent detection is carried out by using an electrolyte solution not necessarily requiring an organic solvent. By making the electrolyte medium an aqueous system not containing an organic solvent, not only its usability can be enhanced but also measurement values with less dispersion can be obtained. Therefore, detection of the test substance including a biomolecule by utilizing the photocurrent detection of dye sensitization according to the present invention is characterized by that the processes from a reaction process of a test substance till detection of the photocurrent are carried out in a single apparatus, and that process of the photocurrent detection is carried out by using an electrolyte solution not necessarily requiring an aprotic solvent.

Abstract: A sapphire substrate having one principal surface on which a nitride semiconductor is grown, said one principal surface having a plurality of projections. Each of the projections has a generally pyramidal shape with a not truncated, more sharpened tip and with an inclined surface composed of a crystal growth-suppression surface that lessens or suppresses the growth of the nitride semiconductor and also which has an inclination change line at which an inclination angle discontinuously varies.

Abstract: A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.

Abstract: A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract: A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.