Patents by Inventor Kai-Chih Liang
Kai-Chih Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170023521Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.Type: ApplicationFiled: October 3, 2016Publication date: January 26, 2017Inventors: Alexander KALNITSKY, Yi-Shao LIU, Kai-Chih LIANG, Chia-Hua CHU, Chun-Ren CHENG, Chun-Wen CHENG
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Patent number: 9499396Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: GrantFiled: February 17, 2015Date of Patent: November 22, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Patent number: 9459234Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.Type: GrantFiled: May 24, 2012Date of Patent: October 4, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”)Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
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Patent number: 9449867Abstract: The present disclosure relates to an integrated microsystem with a protection barrier structure, and an associated method. In some embodiments, the integrated microsystem comprises a first die having a plurality of CMOS devices disposed thereon, a second die having a plurality of MEMS devices disposed thereon and a vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die. The second die is bonded to the first die at a bond interface region. The vHF etch barrier structure comprises a vHF barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die.Type: GrantFiled: June 17, 2014Date of Patent: September 20, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tzu-Heng Wu, Yi-Hsien Chang, Kai-Chih Liang, Yi Heng Tsai, Wei-Cheng Shen, Chun-Ren Cheng, Chun-Wen Cheng, Han-Chin Chiu
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Patent number: 9359194Abstract: MEMS devices, packaged MEMS devices, and methods of manufacture thereof are disclosed. In one embodiment, a microelectromechanical system (MEMS) device includes a first MEMS functional structure and a second MEMS functional structure. An interior region of the second MEMS functional structure has a pressure that is different than a pressure of an interior region of the first MEMS functional structure.Type: GrantFiled: January 27, 2015Date of Patent: June 7, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Chun-Wen Cheng
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Patent number: 9254997Abstract: A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device.Type: GrantFiled: August 29, 2013Date of Patent: February 9, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Wen Cheng, Kai-Chih Liang, Chia-Hua Chu
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Publication number: 20150364363Abstract: The present disclosure relates to an integrated microsystem with a protection barrier structure, and an associated method. In some embodiments, the integrated microsystem comprises a first die having a plurality of CMOS devices disposed thereon, a second die having a plurality of MEMS devices disposed thereon and a vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die. The second die is bonded to the first die at a bond interface region. The vHF etch barrier structure comprises a vHF barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die.Type: ApplicationFiled: June 17, 2014Publication date: December 17, 2015Inventors: Tzu-Heng Wu, Yi-Hsien Chang, Kai-Chih Liang, Yi Heng Tsai, Wei-Cheng Shen, Chun-Ren Cheng, Chun-Wen Cheng, Han-Chin Chiu
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Patent number: 9133017Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.Type: GrantFiled: June 5, 2014Date of Patent: September 15, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Jiou-Kang Lee, Chung-Hsien Lin, Te-Hao Lee, Chia-Hua Chu
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Publication number: 20150217996Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: ApplicationFiled: April 13, 2015Publication date: August 6, 2015Inventors: Chia-Hua Chu, Chun-Wen Cheng, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Te-Hao Lee
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Publication number: 20150158723Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: ApplicationFiled: February 17, 2015Publication date: June 11, 2015Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Publication number: 20150137283Abstract: MEMS devices, packaged MEMS devices, and methods of manufacture thereof are disclosed. In one embodiment, a microelectromechanical system (MEMS) device includes a first MEMS functional structure and a second MEMS functional structure. An interior region of the second MEMS functional structure has a pressure that is different than a pressure of an interior region of the first MEMS functional structure.Type: ApplicationFiled: January 27, 2015Publication date: May 21, 2015Inventors: Kai-Chih Liang, Chun-Wen Cheng
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Patent number: 9006015Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: GrantFiled: January 24, 2013Date of Patent: April 14, 2015Assignee: Taiwan Semiconductor Manfacturing Company, Ltd.Inventors: Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Chun-wen Cheng
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Patent number: 8987059Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: GrantFiled: August 9, 2012Date of Patent: March 24, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Publication number: 20150060954Abstract: A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device.Type: ApplicationFiled: August 29, 2013Publication date: March 5, 2015Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Wen Cheng, Kai-Chih Liang, Chia-Hua Chu
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Patent number: 8952465Abstract: MEMS devices, packaged MEMS devices, and methods of manufacture thereof are disclosed. In one embodiment, a microelectromechanical system (MEMS) device includes a first MEMS functional structure and a second MEMS functional structure. An interior region of the second MEMS functional structure has a pressure that is different than a pressure of an interior region of the first MEMS functional structure.Type: GrantFiled: July 13, 2012Date of Patent: February 10, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Chun-Wen Cheng
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Publication number: 20140353776Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.Type: ApplicationFiled: June 5, 2014Publication date: December 4, 2014Inventors: Kai-Chih Liang, Jiou-Kang Lee, Chung-Hsien Lin, Te-Hao Lee, Chia-Hua Chu
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Publication number: 20140206123Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: ApplicationFiled: January 24, 2013Publication date: July 24, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Chun-wen Cheng
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Patent number: 8748205Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.Type: GrantFiled: November 30, 2012Date of Patent: June 10, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Jiou-Kang Lee, Chung-Hsien Lin, Te-Hao Lee, Chia-Hua Chu
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Patent number: 8647892Abstract: A method for process control is disclosed. The method includes performing an etching process on a semiconductor substrate forming a structure and a test structure having a pattern and a releasing mechanism coupled to the pattern; and monitoring the pattern of the test structure to determine whether the etching process is complete.Type: GrantFiled: October 19, 2010Date of Patent: February 11, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Wen-Chuan Tai, Chun-Ren Cheng
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Patent number: 8633554Abstract: The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer.Type: GrantFiled: February 1, 2013Date of Patent: January 21, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Yi Heng Tsai, Kai-Chih Liang, Chia-Pao Shu, Li-Cheng Chu, Kuei-Sung Chang, Hsueh-An Yang, Chung-Hsien Lin