Abstract: Systems and methods for generating, distributing, and using performance mode BIOS configurations are disclosed. Each performance mode BIOS configuration can be a unique set of BIOS setting values that have been established to optimize a particular performance parameter or set of performance parameters, such as boot speed or operating system installation speed. Based on a given hardware configuration and/or set of performance parameters, one or more performance mode BIOS configurations can be packaged and transferred to a memory of a BMC in the form of one or more configuration payloads. The BIOS Setup Utility can display all configuration payloads, such as listed by the type of performance mode (e.g., “Boot Speed Performance Mode” and “OS Installation Performance Mode”), that are available in the BMC memory and allow a user to overwrite the memory containing the current BIOS configuration with a selected configuration payload.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

Abstract: An access point (AP) station (STA) (AP STA) that is part of an AP multi-link device (MLD) may be configured as a reporting AP may encode a BSS Transition Management (BTM) request frame for transmission to one or more associated non-AP stations (STAs). The BTM request frame may include a neighbor report element encoded to include information about one or more neighbor APs. The neighbor report element may indicate whether the one or more neighbor APs identified in the neighbor report element are part of an AP MLD and, when a neighbor AP is indicated to be part of an AP MLD whether the reporting AP is part of the indicated AP MLD. The AP STA may decode a reassociation frame from one of the non-AP STAs for transition from one of the AP STAs of the AP MLD to one of the neighbor APs.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: A class D amplifier is provided, including: a first comparator, configured to generate a first comparison result based on a positive end input signal and a triangular wave; a second comparator, configured to generate a second comparison result based on a negative end input signal and the triangular wave; an exclusive OR gate, configured to generate a first control signal based on the first comparison result and the second comparison result; a first AND gate, configured to generate a positive end PMW output based on the first comparison result and the first control signal; and a second AND gate, configured to generate a negative end PMW output based on the second comparison result and the first control signal; and an output stage, configured to generate the positive end output signal and the negative end output signal correspondingly based on the positive end PMW output and the negative end PMW output.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: Methods, apparatuses, and computer readable media for communicating elements between multi-link devices are disclosed. Apparatuses of a first access points (AP) of an AP multi-link device (MLD) are disclosed, where the apparatuses comprise processing circuitry configured to encode a first portion of a first beacon frame or first response frame, and in response to a second AP of the AP MLD transmitting, on a second frequency band, a second beacon frame or a second probe response frame comprising a channel switch announcement element or an enhanced channel switch announcement frame, encoding a second portion of the first beacon frame or the first probe response frame, the second portion comprising the channel switch announcement element or the enhanced channel switch announcement frame. The processing circuitry is further configured to configure the first AP of the AP MLD to transmit, on a first frequency band, the first beacon frame.

Abstract: A photo mask includes a plurality of device features, a first assist feature, and a second assist feature. The device features are in a patterning region of a device region. The first assist feature are in the patterning region and adjacent to the device features. The first assist feature is for correcting an optical proximity effect in a photolithography process. The second assist feature is in a non-patterning region of the device region. The second assist feature is a sub-resolution correction feature, and a first distance between the second assist feature and one of the device features closest to the second assist feature is greater than a second distance between adjacent two of the device features.

Abstract: Methods, apparatuses, and computer readable media for a common preamble for wireless local-area networks (WLANs). An apparatus of an access point (AP) or station (STA) comprising processing circuitry configured to encode an AP trigger frame that includes a resource allocation for other APs to transmit trigger frames to perform an uplink or downlink multi-user transmission with stations (STAs). The resource allocation includes information so that the transmissions are coordinated at the physical level to lessen interference among the APs and the stations. The processing is configured to encode a trigger frame for multi-AP request-to-send (RTS), the multi-AP trigger frame comprising for each of a plurality of APs, the trigger frame indicating that each of a plurality of APs are to transmit a physical (PHY) protocol data unit (PPDU) comprising a request-to-send (RTS) or multi-user (MU) RTS (MU-RTS).

Abstract: A remote-control system, a remote-controller, and a remote-control method are provided. The remote-control method includes: obtaining environmental image data by an image capture device of a remote-controller; building a map according to the environmental image data based on simultaneous localization and mapping (SLAM) algorithm, and obtaining first location information of a first display in the map according to the environmental image data by the remote-controller; and receiving the first location information from the remote-controller and controlling the first display according to the first location information by a computing device.

Abstract: The present disclosure relates to a display panel. The display panel includes a display substrate, an opposite substrate, and a first adhesive layer and light guide layer located between the display substrate and the opposite substrate and stacked on each other. The first adhesive layer includes a photo-cured layer formed by curing a photocurable material layer. And the light guide layer is used to direct light to the photocurable material layer during the curing to form the cured layer.

Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Abstract: An optical assembly and projection device using the same. The optical assembly configured for converting light defined by a light path. A color wheel includes at least two color circles, the at least two color circles are arranged concentrically and each includes a plurality of color zones. A first drive assembly connect to the color wheel, the first drive assembly is configured for driving the color wheel to rotate, and the plurality of color zones of each of the at least two color circles are illuminated by the light in the light path. A second drive assembly connect to the first drive assembly, the second drive assembly is configured for driving the color wheel in a first direction, and each of the at least two color circles is illuminated a light beam defined by the light path, the first direction intersects with a directional extension of the light path.

Abstract: A semiconductor structure includes a substrate. The substrate is divided into a first element region, a second element region and a boundary region. The boundary region is disposed between the first element region and a second element region. A first mask structure covers the first element region. A second mask structure is disposed in the second element region. A logic gate structure is disposed within the second element region.

Abstract: A plasma-assisted annealing system includes a high temperature furnace, a plasma-induced dissociator and a connecting duct. The plasma-induced dissociator is provided to dissociate a working gas and exhaust the dissociated working gas from its working gas outlet. Both ends of the connecting duct are connected to the working gas outlet of the plasma-induced dissociator and a gas inlet of the high temperature furnace, respectively. The working gas dissociated in the plasma-induced dissociator is introduced into the high temperature furnace via the connecting duct.

Abstract: This disclosure describes systems, methods, and devices related to high throughput (HT) control information. A device may determine a frame comprising HT control information. The device may determine to extend a size of the HT control information. The device may cause to generate a management or data frame for sending to a first station device of one or more station devices, the management or data frame comprising extended high throughput (HT) control information, define a new control identification (ID) associated with the extended HT control information, and cause to send the management or data frame to the first station device.

Abstract: Embodiments of an Extremely High Throughput Station (EHT STA) (STA1) configured for operating in a next-generation (NG) wireless local area network (WLAN) are described herein. In some embodiments, the EHT STA encodes a common signal field (SIG) (Coex-SIG) of an EHT PPDU to include a TXOP duration field. The TXOP duration field is more than seven bits to indicate an actual TXOP duration of a transmission from the EHT STA comprising the EHT PPDU transmitted to a second station (STA2). Decoding the TXOP duration field of the EHT PPDU by a third-party station (STA4) causes the third-party station (STA4) to defer a transmission until after an end of the transmission from the second station (STA2).

Abstract: Aspects of the present disclosure are directed to alternative repeater design(s) that advantageously improve signal-to-noise of distributed acoustic sensing (DAS) systems using coherent detection of Rayleigh backscatter in multi-span links including inline amplification that may be employed—for example—in undersea submarine systems. The repeater designs incorporate Rayleigh combine units (RCU) and Rayleigh drop units (RDU) to reduce Rayleigh backscatter loss as Rayleigh signal(s) is/are routed to a link that propagates the backscatter signal in an opposite direction relative to interrogation pulse(s).

Abstract: A casing structure with functionality of effective thermal management is disclosed, which consists of a casing member, a low thermal conductivity medium, a second heat spreader, and a first heat spreader. When a user operates the electronic device, heat generated from CPU and/or GPU is transferred to the second heat spreader via the first heat spreader, and then is two-dimensionally spread in the second heat spreader. Consequently, the heat is dissipated away from the casing member to air due to the outstanding thermal radiation ability of the casing member. The low thermal conductivity medium is adopted for controlling a heat transfer of heat transferring paths from the heat source and ends to the casing member. By applying the casing structure in an electronic device by a form of a top casing and/or a back casing, an outer surface temperature of the casing member can be well controlled.