Abstract: A plasma source assembly for use with a processing chamber includes a blocker plate with at least one elongate slot through the blocker plate. The elongate slots can be have different lengths and angles relative to sides of the blocker plate.

Abstract: Heating apparatus for heating substrates having a graphite body and at least one heating element comprising a continuous section of material disposed within the body are disclosed. Processing chambers incorporating the heating apparatus are also disclosed.

Abstract: The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

Abstract: Apparatus and methods for processing a substrate including an injector unit insert with a plurality of flow paths leading to a first plenum, each of the flow paths providing one or more of substantially the same residence time, length and/or conductance. Injector units including the injector unit inserts have increased flow uniformity.

Abstract: A baffle assembly for an etching apparatus is disclosed. The baffle assembly comprises a ring and a lower baffle portion having a curved wall extending between a flange portion and a lower frame portion. A heating assembly may be present within the lower frame portion to control the temperature of the baffle. The baffle assembly may help confine the plasma within the processing space in the chamber. The ring may comprise silicon carbide and the lower baffle portion may comprise aluminum.

Abstract: A plasma source assembly for use with a processing chamber is described. The assembly includes a multi-feed RF power connection to a single or multiple RF hot electrodes.

Abstract: Apparatus for controlling the thermal uniformity of a substrate are provided. The thermal uniformity of the substrate may be controlled to be more uniform or the thermal uniformity of the substrate may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon; and a flow path disposed within the substrate support to flow a heat transfer fluid beneath the support surface, wherein the flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length, wherein the first portion is spaced about 2 mm to about 10 mm from the second portion, and wherein the first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.

Abstract: A plasma source assembly for use with a processing chamber is described. The assembly includes a multi-feed RF power connection to a single or multiple RF hot electrodes.

Abstract: A heating module for use in a substrate processing chamber. The heating module having a housing with a heat source therein. The heating module can be part of a gas distribution assembly positioned above a susceptor assembly to heat the top surface of the susceptor and wafers directly. The heating module can have constant or variable power output. Processing chambers and methods of processing a wafer using the heating module are described.

Abstract: Apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform are described. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating.

Abstract: Apparatus for controlling the thermal uniformity of a substrate. In some embodiments, the thermal uniformity of the substrate is controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate is controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate includes a substrate support having a support surface to support a substrate thereon. A plurality of flow paths having a substantially equivalent fluid conductance are disposed within the substrate support to flow a heat transfer fluid beneath the support surface.

Abstract: Embodiments of multi-substrate thermal management apparatus are provided herein. In some embodiments, a multi-substrate thermal management apparatus includes a plurality of plates vertically arranged above one another; a plurality of channels extending through each of the plurality of plates; a supply manifold including a supply channel coupled to the plurality of plates at first locations; and a return manifold including a return channel coupled to the plurality of plates via a plurality of legs at second locations, wherein the supply and return channels are fluidly coupled to the plurality of channels to flow a heat transfer fluid through the plurality of plates.

Abstract: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

Abstract: A plasma source assembly for use with a processing chamber includes a blocker plate with a first set of apertures within an inner electrical center of the blocker plate and smaller apertures around the outer peripheral edge. The apertures can decrease gradually in diameter from the electrical center outward to the peripheral edge or can be in discrete increments with the smallest at the outer peripheral edge.

Abstract: A plasma source assembly for use with a processing chamber is described. The assembly includes a multi-feed RF power connection to a single or multiple RF hot electrodes.

Abstract: Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively.

Abstract: The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

Abstract: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

Abstract: A plasma reactor employs an e-beam source to generate plasma, and the e-beam source has a configurable magnetic shield.