Abstract: A method of fabricating a bit patterned storage medium includes obtaining a substrate having a magnetic layer and forming a mask over the magnetic layer. The magnetic layer is etched through the mask using a reactive ion etch. The etch rate of the mask is reduced by introducing a gas into the reactive ion etch.

Abstract: A thin film structure in the form of, for example, a magnetic recording medium having a deceased C-axis distribution is provided. The structure includes a substrate having a first surface and a second surface non-parallel to the first surface, a seed layer overlying the first surface and the second surface of the substrate and a magnetic material layer on the seed layer. The magnetic material layer has a C-axis tilted with respect to an axis perpendicular to the magnetic material layer, i.e., a surface normal of the magnetic material layer. The seed layer has a columnar structure oriented generally perpendicular to either the first surface or the second surface of the substrate. The columnar structure of the seed layer acts as a template to epitaxial growth.

Abstract: An apparatus comprises a waveguide, an optical transducer for coupling electromagnetic radiation from the waveguide to a point adjacent to an air bearing surface to heat a portion of a storage medium, and a first wire positioned adjacent to the air bearing surface, wherein current in the wire produces a magnetic field in the heated portion of the storage medium.

Abstract: A magnetic storage media comprises a substrate supporting the layer of magnetic media having a tilted C-axis greater than approximately 25° with respect to surface normal and having a magnetic easy axis tilted at an angle at approximately greater than 30° from the substrate surface normal. The media includes an oblique deposited seedlayer structure directing tilted C-axis growth of the magnetic material layer independent of the angle of deposition of the magnetic material layer. The orientation C-axis and the magnetic easy axis of the media may be organized into circumferential or radial patterns on the substrate surface, and additionally may possess azimuthal symmetry.

Abstract: A deposition system including a shadow mask with one or more apertures, and a method are described for oblique deposition of tilted thin films with azimuthal symmetry. The deposition system is used with physical vapor deposition processes to provide improved control of the angle of incidents of the flux combined with rotation of the substrate to create titled thin films with improved properties compared to conventional oblique deposition techniques.

Abstract: A deposition system and method for creating tilted thin films with azimuthal symmetry by oblique deposition. The deposition system includes a collimator for use with physical vapor deposition to provide control of the angle of incidence of the flux with improved flux throughput compared to conventional oblique deposition techniques. Additionally, the deposition system includes a collimator that may be used as a vacuum barrier for reduction of thermalization near the substrate.

Abstract: A magnetic storage media comprises a substrate supporting the layer of magnetic media having a tilted C-axis greater than approximately 25° with respect to surface normal and having a magnetic easy axis tilted at an angle at approximately greater than 30° from the substrate surface normal. The media includes an oblique deposited seedlayer structure directing tilted C-axis growth of the magnetic material layer independent of the angle of deposition of the magnetic material layer. The orientation C-axis and the magnetic easy axis of the media may be organized into circumferential or radial patterns on the substrate surface, and additionally may possess azimuthal symmetry.

Abstract: The present invention provides a method of manufacturing a semiconductor device. The method includes depositing a metal oxide containing a dopant and having a high dielectric constant on a substrate; wherein the metal is aluminum or silicon and the dopant is zirconium or hafnium and etching the doped metal oxide with a plasma containing a halogenated compound.

Abstract: The present invention provides a method of manufacturing a semiconductor device. The method includes depositing a metal oxide containing a dopant and having a high dielectric constant on a substrate; wherein the metal is aluminum or silicon and the dopant is zirconium or hafnium and etching the doped metal oxide with a plasma containing a halogenated compound.