Patents by Inventor Kaname MITSUZUKA
Kaname MITSUZUKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11139291Abstract: A semiconductor device is provided, including a semiconductor substrate, wherein the semiconductor substrate has: a diode region; a transistor region; and a boundary region that is positioned between the diode region and the transistor region, the boundary region includes a defect region that is provided: at a predetermined depth position on a front surface-side of the semiconductor substrate; and to extend from an end portion of the boundary region adjacent to the diode region toward the transistor region, at least part of the boundary region does not include a first conductivity-type emitter region exposed on a front surface of the semiconductor substrate, and the transistor region does not have the defect region below a mesa portion that is sandwiched by two adjacent trench portions, and closest to the boundary region among the mesa portions having the emitter region.Type: GrantFiled: November 29, 2019Date of Patent: October 5, 2021Assignee: FUJI ELECTRIC CO., LTD.Inventors: Takahiro Tamura, Yuichi Onozawa, Misaki Takahashi, Kaname Mitsuzuka, Daisuke Ozaki, Akinori Kanetake
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Patent number: 11127822Abstract: At edge termination region, a trench is disposed near an interface of an active region. Inside the trench, an embedded insulating film is embedded, and inside the embedded insulating film, a FP long in a direction of depth is disposed. The FP curves outwardly away from an inner sidewall of the trench as a depth from a base front surface increases. At least near a bottom end of the FP, a distance between the FP and the inner sidewall of trench is greater than a width of the groove. The FP is connected to a front surface electrode that extends on the embedded insulating film. As a result, breakdown voltage can be enhanced, adverse effects of the surface charge can be reduced, and chip size can be further reduced.Type: GrantFiled: April 25, 2017Date of Patent: September 21, 2021Assignee: FUJI ELECTRIC CO., LTD.Inventors: Wentao Yang, Johnny Kin On Sin, Yuichi Onozawa, Kaname Mitsuzuka
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Publication number: 20210265340Abstract: Provided is a semiconductor device including a semiconductor substrate; a transistor portion provided in the semiconductor substrate; a current sensing portion for detecting current flowing through the transistor portion; an emitter electrode set to an emitter potential of the transistor portion; a sense electrode electrically connected to the current sensing portion; and a Zener diode electrically connected between the emitter electrode and the sense electrode. Provided is a semiconductor device fabricating method including providing a transistor portion in a semiconductor substrate; providing a current sensing portion for detecting current flowing through the transistor portion; providing an emitter electrode set to an emitter potential of the transistor portion; providing a sense electrode electrically connected to the current sensing portion; and providing a Zener diode electrically connected between the emitter electrode and the sense electrode.Type: ApplicationFiled: December 24, 2020Publication date: August 26, 2021Inventors: Kaname MITSUZUKA, Yuichi ONOZAWA
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Publication number: 20210043739Abstract: Provided is a semiconductor device comprising a semiconductor substrate, wherein the semiconductor substrate includes a hydrogen containing region including hydrogen, and the hydrogen containing region includes a high concentration region with a higher carrier concentration than a virtual carrier concentration determined based on a concentration of hydrogen included and an activation ratio of hydrogen. The semiconductor substrate includes an N type drift region, an N type emitter region that has a higher carrier concentration than that in the drift region, a P type base region, a P type collector region provided to be in contact with a lower surface of the semiconductor substrate, and an N type buffer region that is provided between the collector region and the drift region, and has a higher carrier concentration than that in the drift region, and the hydrogen containing region is included in the buffer region.Type: ApplicationFiled: October 22, 2020Publication date: February 11, 2021Inventors: Yoshiharu KATO, Toru AJIKI, Tohru SHIRAKAWA, Misaki TAKAHASHI, Kaname MITSUZUKA, Takashi YOSHIMURA, Yuichi ONOZAWA, Hiroshi TAKISHITA, Soichi YOSHIDA
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Publication number: 20210043758Abstract: Provided is a semiconductor device that includes a semiconductor substrate that is provided with a first conductivity type drift region, a transistor portion that includes a second conductivity type collector region in contact with a lower surface of the semiconductor substrate, and a diode portion that includes a first conductivity type cathode region in contact with the lower surface of the semiconductor substrate, and is alternately disposed with the transistor portion along an arrangement direction in an upper surface of the semiconductor substrate. In the transistor portions, a width in the arrangement direction of two or more transistor portions sequentially selected from the transistor portions nearer to the center in the arrangement direction of the semiconductor substrate is larger than a width in the arrangement direction of one of the other transistor portions.Type: ApplicationFiled: June 24, 2020Publication date: February 11, 2021Inventors: Kouta YOKOYAMA, Toru AJIKI, Kaname MITSUZUKA, Tohru SHIRAKAWA
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Publication number: 20200335497Abstract: A semiconductor device includes a transistor portion which includes a plurality of gate structure portions, and a diode portion which includes a cathode region in a lower surface of a semiconductor substrate. Each of the gate structure portions includes a gate trench portion, an emitter region of a first conductive type which is provided between an upper surface of the semiconductor substrate and a drift region to abut on the gate trench portion, and a base region of a second conductive type which is provided between the emitter region and the drift region to abut on the gate trench portion. A first threshold of the gate structure portion with a shortest distance to the cathode region in a top view is lower than a second threshold of the gate structure portion with a longest distance to the cathode region by 0.1 V or more and 1 V or less.Type: ApplicationFiled: February 18, 2020Publication date: October 22, 2020Inventors: Kaname MITSUZUKA, Tohru SHIRAKAWA, Toru AJIKI, Yuichi ONOZAWA
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Publication number: 20200098747Abstract: A semiconductor device is provided, including a semiconductor substrate, wherein the semiconductor substrate has: a diode region; a transistor region; and a boundary region that is positioned between the diode region and the transistor region, the boundary region includes a defect region that is provided: at a predetermined depth position on a front surface-side of the semiconductor substrate; and to extend from an end portion of the boundary region adjacent to the diode region toward the transistor region, at least part of the boundary region does not include a first conductivity-type emitter region exposed on a front surface of the semiconductor substrate, and the transistor region does not have the defect region below a mesa portion that is sandwiched by two adjacent trench portions, and closest to the boundary region among the mesa portions having the emitter region.Type: ApplicationFiled: November 29, 2019Publication date: March 26, 2020Inventors: Takahiro TAMURA, Yuichi ONOZAWA, Misaki TAKAHASHI, Kaname MITSUZUKA, Daisuke OZAKI, Akinori KANETAKE
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Publication number: 20200091329Abstract: To provide a semiconductor device having excellent conduction characteristics of a transistor portion and a diode portion. The semiconductor device having a transistor portion and a diode portion, the semiconductor device includes: a drift region of a first conductivity type provided on a semiconductor substrate, a first well region of a second conductivity type provided on an upper surface side of the semiconductor substrate, an anode region of the second conductivity provided on the upper surface side of the semiconductor substrate, in the diode portion, and a first high concentration region of a second conductivity type which is provided in contact with a first well region between the anode region and the first well region, and has a higher doping concentration than the anode region.Type: ApplicationFiled: November 24, 2019Publication date: March 19, 2020Inventors: Kaname MITSUZUKA, Misaki TAKAHASHI, Tohru SHIRAKAWA
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Patent number: 10529800Abstract: A semiconductor device is provided, including: a semiconductor substrate having an active area and an edge termination region; an upper electrode; an insulating film provided between the semiconductor substrate and the upper electrode and having a contact hole; a first conductivity-type drift region; a second conductivity-type base region; a second conductivity-type well region; and a second conductivity-type extension region formed extending in a direction toward the well region from the base region and separated from the upper electrode by the insulating film, wherein a sum of a first distance from an end portion of the contact hole closer to the well region to an end portion of the extension region closer to the well region and a second distance from the end portion of the extension region closer to the well region to the well region is smaller than a thickness of the semiconductor substrate in the active area.Type: GrantFiled: February 15, 2018Date of Patent: January 7, 2020Assignee: FUJI ELECTRIC CO., LTD.Inventors: Kaname Mitsuzuka, Yuichi Onozawa, Takahiro Tamura
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Publication number: 20180233554Abstract: A semiconductor device is provided, including: a semiconductor substrate having an active area and an edge termination region; an upper electrode; an insulating film provided between the semiconductor substrate and the upper electrode and having a contact hole; a first conductivity-type drift region; a second conductivity-type base region; a second conductivity-type well region; and a second conductivity-type extension region formed extending in a direction toward the well region from the base region and separated from the upper electrode by the insulating film, wherein a sum of a first distance from an end portion of the contact hole closer to the well region to an end portion of the extension region closer to the well region and a second distance from the end portion of the extension region closer to the well region to the well region is smaller than a thickness of the semiconductor substrate in the active area.Type: ApplicationFiled: February 15, 2018Publication date: August 16, 2018Inventors: Kaname Mitsuzuka, Yuichi Onozawa, Takahiro Tamura
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Publication number: 20170250258Abstract: At edge termination region, a trench is disposed near an interface of an active region. Inside the trench, an embedded insulating film is embedded, and inside the embedded insulating film, a FP long in a direction of depth is disposed. The FP curves outwardly away from an inner sidewall of the trench as a depth from a base front surface increases. At least near a bottom end of the FP, a distance between the FP and the inner sidewall of trench is greater than a width of the groove. The FP is connected to a front surface electrode that extends on the embedded insulating film. As a result, breakdown voltage can be enhanced, adverse effects of the surface charge can be reduced, and chip size can be further reduced.Type: ApplicationFiled: April 25, 2017Publication date: August 31, 2017Applicant: FUJI ELECTRIC CO., LTD.Inventors: Wentao YANG, Johnny Kin On SIN, Yuichi ONOZAWA, Kaname MITSUZUKA