Patents by Inventor Karl B. Levy
Karl B. Levy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8367546Abstract: Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.Type: GrantFiled: October 18, 2011Date of Patent: February 5, 2013Assignee: Novellus Systems, Inc.Inventors: Raashina Humayun, Kaihan Ashtiani, Karl B. Levy
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Patent number: 8329576Abstract: Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.Type: GrantFiled: July 1, 2010Date of Patent: December 11, 2012Assignee: Novellus Systems, Inc.Inventors: Lana Hiului Chan, Feng Chen, Karl B. Levy
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Patent number: 8192131Abstract: A semiconductor wafer processing system in accordance with an embodiment of the present invention includes a loading station, a load lock, a process module, an intermediate process module, and a transport module which further includes a load chamber, a transfer chamber, and a pass-through chamber between the load chamber and the transfer chamber. The intermediate process module may be coupled to the load chamber, or both the load chamber and the transfer chamber. In one embodiment, the load lock is a single-wafer load lock capable of accommodating only a single wafer at a time to allow for fast pump down and vent cycles. In one embodiment, the pass-through chamber is configured as a cooling station to improve throughput for processes that require the wafer to be cooled in-between depositions, for example.Type: GrantFiled: October 14, 2005Date of Patent: June 5, 2012Assignee: Novellus Systems, Inc.Inventors: Craig L. Stevens, Karl B. Levy
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Publication number: 20120040530Abstract: Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.Type: ApplicationFiled: October 18, 2011Publication date: February 16, 2012Inventors: Raashina HUMAYUN, Kaihan ASHTIANI, Karl B. LEVY
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Patent number: 8053365Abstract: Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.Type: GrantFiled: December 21, 2007Date of Patent: November 8, 2011Assignee: Novellus Systems, Inc.Inventors: Raashina Humayun, Kaihan Ashtiani, Karl B. Levy
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Publication number: 20100273327Abstract: Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.Type: ApplicationFiled: July 1, 2010Publication date: October 28, 2010Applicant: NOVELLUS SYSTEMS, INC.Inventors: Lana Hiului Chan, Feng Chen, Karl B. Levy
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Patent number: 7772114Abstract: Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.Type: GrantFiled: December 5, 2007Date of Patent: August 10, 2010Assignee: Novellus Systems, Inc.Inventors: Lana Hiului Chan, Feng Chen, Karl B. Levy
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Patent number: 7691749Abstract: Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.Type: GrantFiled: December 16, 2005Date of Patent: April 6, 2010Assignee: Novellus Systems, Inc.Inventors: Karl B. Levy, Junghwan Sung, Kaihan A. Ashtiani, James A. Fair, Joshua Collins, Juwen Gao
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Publication number: 20090163025Abstract: Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.Type: ApplicationFiled: December 21, 2007Publication date: June 25, 2009Applicant: NOVELLUS SYSTEMS, INC.Inventors: Raashina Humayun, Kaihan Ashtiani, Karl B. Levy
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Publication number: 20090149022Abstract: Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.Type: ApplicationFiled: December 5, 2007Publication date: June 11, 2009Applicant: NOVELLUS SYSTEMS, INC.Inventors: Lana Hiului Chan, Feng Chen, Karl B. Levy
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Patent number: 7262125Abstract: Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.Type: GrantFiled: March 31, 2004Date of Patent: August 28, 2007Assignee: Novellus Systems, Inc.Inventors: Panya Wongsenakhum, Aaron R. Fellis, Kaihan A. Ashtiani, Karl B. Levy, Juwen Gao, Joshua Collins, Junghwan Sung, Lana Hiului Chan
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Patent number: 7141494Abstract: A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.Type: GrantFiled: August 26, 2003Date of Patent: November 28, 2006Assignee: Novellus Systems, Inc.Inventors: Sang-Hyeob Lee, Karl B. Levy, Aaron R. Fellis, Panya Wongsenakhum, Juwen Gao, Joshua Collins, Kaihan A. Ashtiani, Junghwan Sung, Lana Hiului Chan
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Patent number: 7005372Abstract: Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.Type: GrantFiled: October 20, 2003Date of Patent: February 28, 2006Assignee: Novellus Systems, Inc.Inventors: Karl B. Levy, Junghwan Sung, Kaihan A. Ashtiani, James A. Fair, Joshua Collins, Juwen Gao
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Patent number: 6977014Abstract: A semiconductor wafer processing system in accordance with an embodiment of the present invention includes a loading station, a load lock, a process module, an intermediate process module, and a transport module which further includes a load chamber, a transfer chamber, and a pass-through chamber between the load chamber and the transfer chamber. The intermediate process module may be coupled to the load chamber, or both the load chamber and the transfer chamber. In one embodiment, the load lock is a single-wafer load lock capable of accommodating only a single wafer at a time to allow for fast pump down and vent cycles. In one embodiment, the pass-through chamber is configured as a cooling station to improve throughput for processes that require the wafer to be cooled in-between depositions, for example.Type: GrantFiled: June 1, 2001Date of Patent: December 20, 2005Assignee: Novellus Systems, Inc.Inventors: Craig L. Stevens, Karl B. Levy
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Patent number: 6905959Abstract: A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about ?70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.Type: GrantFiled: December 31, 2002Date of Patent: June 14, 2005Assignee: Novellus Systems, Inc.Inventors: Kaihan A. Ashtiani, Maximilian A. Biberger, Erich R. Klawuhn, Kwok Fai Lai, Karl B. Levy, J. Patrick Rymer
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Patent number: 6902620Abstract: Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer sequential processing chamber. The process gases are sequentially rotated among the wafer stations to deposit a portion of a total deposition thickness on each wafer at each station. A rapid rotary switching of the process gases eliminates having to divert the process gases to a system vent and provides for atomic layer film growth sufficient for high-volume production applications. Conventional chemical vapor deposition can also be performed concurrently with atomic layer deposition within the multi-wafer sequential processing chamber.Type: GrantFiled: December 19, 2001Date of Patent: June 7, 2005Assignee: Novellus Systems, Inc.Inventors: Thomas R. Omstead, Karl B. Levy
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Publication number: 20040202786Abstract: Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.Type: ApplicationFiled: March 31, 2004Publication date: October 14, 2004Applicant: Novellus Systems, Inc.Inventors: Panya Wongsenakhum, Aaron R. Fellis, Kaihan A. Ashtiani, Karl B. Levy, Juwen Gao, Joshua Collins, Junghwan Sung, Lana Hiului Chan
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Publication number: 20040142557Abstract: Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.Type: ApplicationFiled: October 20, 2003Publication date: July 22, 2004Applicant: Novellus Systems, Inc.Inventors: Karl B. Levy, Junghwan Sung, Kaihan A. Ashtiani, James A. Fair, Joshua Collins, Juwen Gao
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Patent number: 6554914Abstract: The present invention pertains to systems and methods for passivating the copper seed layer deposited in Damascene integrated circuit manufacturing. More specifically, the invention pertains to systems and methods for depositing the copper seed layer by physical vapor deposition, while passivating the copper during or immediately after the deposition in order to prevent excessive oxidation of the copper. The invention is applicable to dual Damascene processing.Type: GrantFiled: February 2, 2001Date of Patent: April 29, 2003Assignee: Novellus Systems, Inc.Inventors: Robert T. Rozbicki, Ronald Allan Powell, Erich Klawuhn, Michal Danek, Karl B. Levy, Jonathan David Reid, Mukul Khosla, Eliot K. Broadbent
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Patent number: 6541371Abstract: A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about −70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.Type: GrantFiled: January 26, 2000Date of Patent: April 1, 2003Assignee: Novellus Systems, Inc.Inventors: Kaihan A. Ashtiani, Maximilian A. Biberger, Erich R. Klawuhn, Kwok Fai Lai, Karl B. Levy, J. Patrick Rymer