Patent number: 9196823
Abstract: A magnetoresistive effect element includes the following structure. A first ferromagnetic layer has a variable magnetization direction. A second ferromagnetic layer has an invariable magnetization direction. A tunnel barrier layer is formed between the first and second ferromagnetic layers. An energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer. The second ferromagnetic layer contains a main component and an additive element. The main component contains at least one of Fe, Co, and Ni. The additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W.
Type:
Grant
Filed:
September 5, 2013
Date of Patent:
November 24, 2015
Assignee:
KABUSHIKI KAISHA TOSHIBA
Inventors:
Makoto Nagamine, Daisuke Ikeno, Koji Ueda, Katsuya Nishiyama, Katsuaki Natori, Koji Yamakawa