Abstract: A method of forming a silicon film in grooves formed on a surface of an object to be processed, the method including forming a first silicon film containing impurities so as to embed the first silicon film in the grooves of the object to be processed; doping the impurities in the vicinity of the surface of the first silicon film; expanding opening portions of the grooves by etching the first silicon film thereby forming expanded openings having grooves; and forming a second silicon film so as to embed the second silicon film in the grooves of the expanded openings is provided.

Abstract: A method of forming a silicon film includes a first film forming process, an etching process, a doping process, and a second film forming process. In the first film forming process, a silicon film doped with impurities containing boron is formed so as to embed a groove provided on an object to be processed. In the etching process, the silicon film formed in the first film forming process is etched. In the doping process, the silicon film etched in the etching process is doped with impurities containing boron. In the second film forming process, a silicon film doped with impurities containing boron is formed so as to embed the silicon film that is doped in the doping process.

Abstract: A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.

Abstract: A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.

Abstract: A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

Abstract: A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

Abstract: In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.

Abstract: A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

Abstract: In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.

Abstract: A treating agent for cellulosic textile materials includes a water-soluble phosphonium salt of phosphorus-containing oxoacid and polycarboxylic acid as active ingredients, and a process of treating cellulosic textile materials uses the treating agent. The treating agent eliminates the necessity of the use of a substance releasing formaldehyde during wash and wear treatment and enables non-formaldehyde wash and wear treatment, and the cellulosic textile material treated by the treating agent is completely free from formaldehyde, retains enough of the strength thereof, and undergoes neither discoloration nor fibrillation.