Abstract: A silicon carbide semiconductor device is disclosed which includes a silicon carbide single-crystal layer and at least one ohmic electrode in contact with the silicon carbide single-crystal layer, wherein the ohmic electrode is made of a titanium-aluminum alloy. Also disclosed is a method of producing the silicon carbide semiconductor device.

Abstract: A silicon carbide light emitting diode having a pn junction is disclosed which comprises a semiconductor substrate, a first silicon carbide single-crystal layer of one conductivity formed on the substrate, and a second silicon carbide single-crystal layer of the opposite conductivity formed on the first silicon carbide layer, the first and second silicon carbide layers constituting the pn junction, wherein at least one of the first and second silicon carbide layers contains a tetravalent transition element as a luminescent center.

Abstract: A MIS structure is provided which uses a photoconductive amorphous silicon carbide layer as an insulator layer in the MIS structure. The insulator layer is disposed on an n-type layer of single crystal silicon carbide and a translucent metal layer is disposed thereon. The metal layer is biased with a negative voltage so that the capacitance between the metal layer and the semiconductor layer changes in response to whether on the metal layer is illuminated with light.

Abstract: A process for producing a single-crystal substrate of silicon carbide comprises growing a single-crystal film of .alpha.-silicon carbide on a single-crystal film of .beta.-silicon carbide as a growth substrate, thereby obtaining a high quality single-crystal substrate of .alpha.-silicon carbide having a large area, which is producible on a commercial scale.

Abstract: A method for producing a silicon carbide semiconductor device having at least one of the p-type conductive layer and the n-type conductive layer is disclosed which includes the steps of: forming a silicon carbide single-crystal layer on a semiconductor substrate or semiconductor bulk single crystal; and implanting the III group of V group element ions in combination with fluorine ions in the silicon carbide single-crystal layer to form a p-type or n-type conductive layer, respectively.

Abstract: An electrode structure for a silicon carbide single-crystal semiconductor in which the surface of the silicon carbide single-crystal is laminated with a metal layer of titanium, aluminum, chromium or molybdenum, or with the metal layer and an electrically conductive protective layer formed over the metal layer to provide an ohmic electrode.

Abstract: A process for producing a SiC semiconductor device comprising growing a single-crystal film of SiC on a single-crystal substrate of Si and forming the structure of semiconductor device such as diodes, transistors, etc., on said SiC single-crystal film, thereby obtaining a SiC semiconductor device on a commercial scale.

Abstract: A single-crystal substrate of silicon carbide comprising a single-crystal substrate member of a material other than .alpha.-SiC, and a single-crystal layer of .alpha.-SiC formed over the substrate member with a ground layer provided between the substrate member and the single-crystal layer, the ground layer comprising a single-crystal layer of nitride of AlN, GaN or Al.sub.x Ga.sub.1-x N (0<x<1) having a hexagonal crystal structure or a crystal layer of the same structure made of a mixture of SiC and at least one of the nitrides; and a method for fabricating the same.

Abstract: The semiconductor device comprises a silicon substrate, a boron-doped high resistant silicon carbide layer that is formed on the silicon substrate and a silicon carbide layer formed on the high resistant silicon carbide layer. The silicon carbide layer that is formed on the high resistant silicon carbide layer provides an electrical insulation for the device so that improved device characteristics are obtained.

Abstract: A heteroepitaxial growth method comprising growing a semiconductor single-crystal film on a semiconductor single-crystal substrate with a lattice constant different from that of the semiconductor single-crystal film by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film being inclined at a certain angle with respect to the semiconductor single-crystal substrate.

Abstract: A process for producing a SiC semiconductor device comprising growing a single-crystal film of SiC on a single-crystal substrate of Si and forming the structure of semiconductor device such as diodes, transistors, etc., on said SiC single-crystal film, thereby obtaining a SiC semiconductor device on a commercial scale.

Abstract: A method of fabricating SiC single-crystal substrate having a large area and a high quality which is suited to mass production, said method comprises covering the surface of a silicon substrate with a uniform thin film of silicon carbide grown by the CVD method at a low temperature, and thereafter growing a single-crystal film of silicon carbide on the thin film by the CVD method at a higher temperature than in the preceeding step.