Abstract: A photoelectric conversion device includes a voltage control unit connected to a first node of a capacitive element and a transistor via the same piece of wiring and configured to output a plurality of voltages having different values to the same piece of wiring.

Abstract: A solid-state image sensor includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first filter having a visible light transmittance higher than an infrared light transmittance, and a first photoelectric converter configured to receive visible light transmitted through the first filter, and each of the plurality of second pixels includes a second filter having an infrared light transmittance higher than a visible light transmittance, and a second photoelectric converter configured to receive infrared light transmitted through the second filter. The plurality of second pixels are divided into a plurality of groups each includes at least two second pixels. The solid-state image sensor includes a synthesizer configured to synthesize a signal from signals of the at least two second pixels included in each group.

Abstract: A photoelectric conversion apparatus includes a plurality of pixels including a pixel electrode having a first electrode and a second electrode, an upper electrode, a photoelectric conversion layer, a first signal output circuit, and a second signal output circuit, and a control unit. During a first period in which the first signal output circuit outputs a signal, the second electrode collects signal charges.

Abstract: A photoelectric conversion device includes: a first electrode; a second electrode; a photoelectric conversion layer arranged between the first electrode and the second electrode; a floating gate electrode connected to the second electrode and adapted to accumulate signal charges generated in the photoelectric conversion layer; an amplification transistor adapted to output a signal corresponding to a potential of the floating gate electrode; and a charge injection portion arranged between the first electrode and the photoelectric conversion layer and adapted to inject opposite polarity charges of signal charges from the first electrode to the photoelectric conversion layer to reset signal charges accumulated in the floating gate electrode.

Abstract: A photoelectric conversion device includes a voltage supply portion configured to set a bias state of a photoelectric conversion layer to each of a reverse bias state and a forward bias state by supplying a plurality of voltages having respective different values to at least one of a first electrode portion and a second electrode portion, wherein, during the forward bias state, a current flows between the first electrode portion and the second electrode portion.

Abstract: A photoelectric conversion device includes a blocking unit located between a photoelectric conversion layer and a second electrode unit and configured to cause electric charge having a first polarity to be injected from the photoelectric conversion layer into the second electrode unit and to prevent electric charge having a second polarity opposite to the first polarity from being injected from the photoelectric conversion layer into the second electrode unit, and a voltage supply unit configured to supply a second voltage to one of a first electrode unit and the second electrode unit such that electric charge having the first polarity is prevented from being injected from the photoelectric conversion layer into the second electrode unit.

Abstract: A solid-state image sensor includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first filter having a visible light transmittance higher than an infrared light transmittance, and a first photoelectric converter configured to receive visible light transmitted through the first filter, and each of the plurality of second pixels includes a second filter having an infrared light transmittance higher than a visible light transmittance, and a second photoelectric converter configured to receive infrared light transmitted through the second filter. The plurality of second pixels are divided into a plurality of groups each includes at least two second pixels. The solid-state image sensor includes a synthesizer configured to synthesize a signal from signals of the at least two second pixels included in each group.

Abstract: A solid-state image sensor includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first filter having a visible light transmittance higher than an infrared light transmittance, and a first photoelectric converter configured to receive visible light transmitted through the first filter, and each of the plurality of second pixels includes a second filter having an infrared light transmittance higher than a visible light transmittance, and a second photoelectric converter configured to receive infrared light transmitted through the second filter. The plurality of second pixels are divided into a plurality of groups each includes at least two second pixels. The solid-state image sensor includes a synthesizer configured to synthesize a signal from signals of the at least two second pixels included in each group.

Abstract: A photoelectric conversion device includes a photoelectric conversion unit including a first and second electrodes, a photoelectric conversion layer between the first and second electrodes, and an insulating layer between the photoelectric conversion layer and the second electrodes, an amplifier unit connected to the second electrode and outputs a signal generated in the photoelectric conversion unit, and a reset unit for resetting a voltage of the second electrode. An accumulating operation for accumulating signal charges in the photoelectric conversion unit and a charge removing operation for removing the signal charges from the photoelectric conversion unit are alternately executed in accordance with a voltage applied between the first and second electrodes, and the charge removing operation is executed multiple times between a first accumulating operation and a second accumulating operation which is executed after the first accumulating operation.

Abstract: A device uses a light-emitting material. The device includes an upper and a lower electrode, a first photoelectric conversion portion disposed between the upper electrode and the lower electrode, a second photoelectric conversion portion, a first readout circuit connected to the first photoelectric conversion portion, and a second readout circuit connected to the second photoelectric conversion portion. The second photoelectric conversion portion converts light emitted from the light-emitting material into electrical charges.

Abstract: A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.

Abstract: A photoelectric conversion device includes a plurality of pixels arranged to form a plurality of columns, each of the pixels including a photoelectric conversion unit including first and second electrodes, a photoelectric conversion layer between the first and second electrodes, and an insulating layer between the photoelectric conversion layer and the second electrode, an amplifier unit connected to the second electrode and configured to output a signal, and a reset unit for supplying a reset voltage to the second electrode. In accordance with a voltage applied between the first and second electrodes, an accumulating operation for accumulating signal charges and a removing operation for removing the signal charges are alternately executed, the reset unit supplies the reset voltage for at least a part of a horizontal scanning period, and the period during which the reset unit supplies the reset voltage is longer than the horizontal scanning period.

Abstract: A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, a reset transistor, and an amplifier transistor that outputs a signal from the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The photoelectric conversion unit alternately performs an accumulation operation and a discharge operation in accordance with the voltage between the first electrode and the second electrode. In a period between two consecutive discharge operations among a plurality of discharge operations, a reset operation in which the reset transistor resets the voltage on the second electrode is performed a plurality of times.

Abstract: A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.

Abstract: The present disclosure provides a photoelectric conversion device including a semiconductor substrate including a signal output portion, an electrode, and an organic compound layer disposed between the signal output portion and the electrode and including a photoelectric conversion layer, wherein the signal output portion is in contact with the organic compound layer.

Abstract: The present disclosure provides a photoelectric conversion apparatus which includes a semiconductor substrate, signal output units disposed on the semiconductor substrate, a plurality of photoelectric conversion layers disposed on a surface of the substrate, and an upper electrode in this order. The photoelectric conversion apparatus further includes insulation layers which are disposed between the plurality of photoelectric conversion layers and which have lines connected to power supply units. The upper electrode and the lines are electrically connected to each other on side surfaces of the insulation layers.

Abstract: An image sensor includes a readout unit having a plurality of circuit blocks. At least a part of each of the plurality of circuit blocks is arranged in each of a plurality of regions electrically isolated from each other. When latchup has occurred in a circuit block of the plurality of circuit blocks, the voltage supply unit shuts off supply of a power supply voltage to the region in which the part is arranged, and then performs the supply of the power supply voltage to the region in which the part is arranged, and the voltage supply unit supplies the power supply voltage to the region in which the circuit block without latchup is arranged, while shutting off the supply of the power supply voltage to the region in which the part is arranged.

Abstract: A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, an amplifier transistor that outputs a signal from the photoelectric conversion unit, and a reset transistor that supplies a reset voltage to the amplifier transistor. The photoelectric conversion unit includes a first electrode, a second electrode electrically connected to the amplifier transistor, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The pixel includes a first capacitor electrically connected to the second electrode. The capacitance value of the first capacitor, the capacitance value of a second capacitor between the first electrode and the second electrode, and a voltage supplied to the pixel satisfy a certain relationship.

Abstract: A photoelectric conversion device includes a plurality of pixels arranged to form a plurality of columns, each of the pixels including a photoelectric conversion unit including first and second electrodes, a photoelectric conversion layer between the first and second electrodes, and an insulating layer between the photoelectric conversion layer and the second electrode, an amplifier unit connected to the second electrode and configured to output a signal, and a reset unit for supplying a reset voltage to the second electrode. In accordance with a voltage applied between the first and second electrodes, an accumulating operation for accumulating signal charges and a removing operation for removing the signal charges are alternately executed, the reset unit supplies the reset voltage for at least a part of a horizontal scanning period, and the period during which the reset unit supplies the reset voltage is longer than the horizontal scanning period.

Abstract: An image pickup device according to an embodiment includes a substrate on which a plurality of pixel circuits are disposed, a semiconductor layer disposed on the substrate, a first electrode disposed on the semiconductor layer, and a second electrode disposed between the semiconductor layer and the substrate. A continuous portion of the semiconductor layer includes a light receiving region disposed between the first electrode and the second electrode and a charge hold region different from the light receiving region.