Abstract: An imaging apparatus according to the present invention includes a substrate including a plurality of pixel circuits arranged thereon and a semiconductor layer disposed on the substrate. Each of the plurality of pixel circuits includes an amplification transistor configured to output a signal based on charge generated in the semiconductor layer. The charge generated in the semiconductor layer is transferred in a first direction parallel to a surface of the substrate.

Abstract: A photoelectric conversion device includes a photoelectric conversion unit including a first and second electrodes, a photoelectric conversion layer between the first and second electrodes, and an insulating layer between the photoelectric conversion layer and the second electrodes, an amplifier unit connected to the second electrode and outputs a signal generated in the photoelectric conversion unit, and a reset unit for resetting a voltage of the second electrode. An accumulating operation for accumulating signal charges in the photoelectric conversion unit and a charge removing operation for removing the signal charges from the photoelectric conversion unit are alternately executed in accordance with a voltage applied between the first and second electrodes, and the charge removing operation is executed multiple times between a first accumulating operation and a second accumulating operation which is executed after the first accumulating operation.

Abstract: A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, a reset transistor, and an amplifier transistor that outputs a signal from the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The photoelectric conversion unit alternately performs an accumulation operation and a discharge operation in accordance with the voltage between the first electrode and the second electrode. In a period between two consecutive discharge operations among a plurality of discharge operations, a reset operation in which the reset transistor resets the voltage on the second electrode is performed a plurality of times.

Abstract: A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, a reset transistor, and an amplifier transistor that outputs a signal from the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The photoelectric conversion unit alternately performs an accumulation operation and a discharge operation in accordance with the voltage between the first electrode and the second electrode. In a period between two consecutive discharge operations among a plurality of discharge operations, a reset operation in which the reset transistor resets the voltage on the second electrode is performed a plurality of times.

Abstract: A solid-state image sensor includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first filter having a visible light transmittance higher than an infrared light transmittance, and a first photoelectric converter configured to receive visible light transmitted through the first filter, and each of the plurality of second pixels includes a second filter having an infrared light transmittance higher than a visible light transmittance, and a second photoelectric converter configured to receive infrared light transmitted through the second filter. The plurality of second pixels are divided into a plurality of groups each includes at least two second pixels. The solid-state image sensor includes a synthesizer configured to synthesize a signal from signals of the at least two second pixels included in each group.

Abstract: An image sensor includes a readout unit having a plurality of circuit blocks. At least a part of each of the plurality of circuit blocks is arranged in each of a plurality of regions electrically isolated from each other. When latchup has occurred in a circuit block of the plurality of circuit blocks, the voltage supply unit shuts off supply of a power supply voltage to the region in which the part is arranged, and then performs the supply of the power supply voltage to the region in which the part is arranged, and the voltage supply unit supplies the power supply voltage to the region in which the circuit block without latchup is arranged, while shutting off the supply of the power supply voltage to the region in which the part is arranged.

Abstract: A solid-state image sensor includes an image sensing unit in which a plurality of pixels are arrayed, a plurality of readout units configured to read out signals from the image sensing unit, a detector configured to detect an occurrence of a latch-up in each of the plurality of readout units, and a controller configured to control power supply to the plurality of readout units. The plurality of readout units are configured to read out signals from a same pixel in the image sensing unit. The controller is configured to shut off power supply to at least part of a readout unit in which the occurrence of the latch-up has been detected out of the plurality of readout units and thereafter supply power to the at least part.

Abstract: A solid-state image sensor includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first filter having a visible light transmittance higher than an infrared light transmittance, and a first photoelectric converter configured to receive visible light transmitted through the first filter, and each of the plurality of second pixels includes a second filter having an infrared light transmittance higher than a visible light transmittance, and a second photoelectric converter configured to receive infrared light transmitted through the second filter. The plurality of second pixels are divided into a plurality of groups each includes at least two second pixels. The solid-state image sensor includes a synthesizer configured to synthesize a signal from signals of the at least two second pixels included in each group.

Abstract: A solid-state image sensor has a plurality of pixels including at least a first pixel configured to detect light in a first wavelength range and a second pixel configured to detect light in a second wavelength range, the second wavelength range including a wavelength range on a longer-wavelength side than the first wavelength range. The sensor includes a control portion configured to supply a control signal to the first and second pixels such that a charge accumulation period of the first pixel is different from a charge accumulation period of the second pixel.

Abstract: A driving method for an image pickup apparatus that includes a plurality of pixels each including a photoelectric conversion portion includes performing photoelectric conversion in each of the plurality of photoelectric conversion portions during a period between first time and second time, generating a plurality of first signals, each being a signal deriving from electric charge generated through the photoelectric conversion in the photoelectric conversion portion, which is a plurality of signals to be generated for each of the plurality of pixels, and generating a plurality of second signals by performing moving average processing on the plurality of first signals.

Abstract: An image pickup device according to the present invention is an image pickup device in which a plurality of pixel are arranged in a semiconductor substrate. Each of the plurality of pixels includes a photoelectric conversion element, a floating diffusion (FD) region, a transfer gate that transfers charges in the first semiconductor region to the FD region, and an amplification transistor whose gate is electrically connected to the FD region. The photoelectric conversion element has an outer edge which has a recessed portion in plan view, a source region and a drain region of the amplification transistor are located in the recessed portion, and the FD region is surrounded by the photoelectric conversion region or is located in the recessed portion in plan view.

Abstract: One exemplary embodiment is a method of driving an image pickup apparatus including a plurality of photoelectric conversion units. A driving method of the present exemplary embodiment includes a generating step of generating electric charges in the photoelectric conversion unit during a period from a first time to a second time; and a transferring step of transferring electric charges generated in the generating step of generating into at least two electric charge reception units in parallel. Then, electric charges transferred from different photoelectric conversion units are added in at least one electric charge reception unit.

Abstract: An imaging apparatus comprising a plurality of pixels each of which includes a photoelectric conversion portion, and a light-condensing portion arranged on the plurality of pixels, wherein the light-condensing portion has an area smaller than an area of the photoelectric conversion portion.

Abstract: A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit and an amplifier transistor configured to output a signal generated by the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode electrically connected to the amplifier transistor, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The photoelectric conversion layer includes quantum dots.

Abstract: A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, an amplifier transistor that outputs a signal from the photoelectric conversion unit, and a reset transistor that supplies a reset voltage to the amplifier transistor. The photoelectric conversion unit includes a first electrode, a second electrode electrically connected to the amplifier transistor, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The pixel includes a first capacitor electrically connected to the second electrode. The capacitance value of the first capacitor, the capacitance value of a second capacitor between the first electrode and the second electrode, and a voltage supplied to the pixel satisfy a certain relationship.

Abstract: A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, a reset transistor, and an amplifier transistor that outputs a signal from the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The photoelectric conversion unit alternately performs an accumulation operation and a discharge operation in accordance with the voltage between the first electrode and the second electrode. In a period between two consecutive discharge operations among a plurality of discharge operations, a reset operation in which the reset transistor resets the voltage on the second electrode is performed a plurality of times.

Abstract: A solid-state imaging device has a configuration for selecting from a plurality of reference pixels at least one reference pixel for outputting a reference signal.

Abstract: A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.

Abstract: A solid-state image sensor has a plurality of pixels including at least a first pixel configured to detect light in a first wavelength range and a second pixel configured to detect light in a second wavelength range, the second wavelength range including a wavelength range on a longer-wavelength side than the first wavelength range. The sensor includes a control portion configured to supply a control signal to the first and second pixels such that a charge accumulation period of the first pixel is different from a charge accumulation period of the second pixel.

Abstract: A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.