Abstract: A plasma processing method for processing a sample by using plasma on a lot unit basis, including: detecting plural kinds of information as monitor data relating to a processing state of the sample, using a plurality of sensors; selecting a detection time range of the monitor data thus detected; converting the monitor data within the selected detection time range into a converted signal; predicting a pattern shape of the sample based on the converted signal; calculating a correction quantity of a processing parameter, for decreasing a deviation between the predicted pattern shape and a standard value; and converting the correction quantity of a processing parameter obtained by the calculating operation when a kind of a next sample of a next lot is different from the sample, thereby to use a converted correction quantity of the processing parameter for a processing of the next sample.

Abstract: A plasma processing method utilizing a plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature of the inner cylinder is monitored, and a desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder. A temperature of the outer cylinder is controlled in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.

Abstract: A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.

Abstract: A plasma processing apparatus for processing a sample within a vacuum vessel, including: a plurality of sensors for detecting plural kinds of information relating to a processing state of the sample as monitor data; data selecting means for selecting a detection time range of the monitor data thus detected which is used for monitoring the plasma processing apparatus; a signal filter for converting the monitor data within the selected detection time range into an effective signal; a model expression unit for generating a predicted value of a patterned physical-shape of a sample based on the effective signal; and a display screen for displaying the patterned physical-shape predicted value; wherein the display screen displays the patterned physical-shape predicted value without measuring a patterned shape after processing of the sample.

Abstract: A plasma processing apparatus and method which includes a vacuum processing chamber, a plasma generating unit, a process gas supply unit, a specimen table, and a vacuum pumping unit. The specimen table includes an electrostatic arrangement for holding a specimen on a holding surface of the specimen table by electrostatic force, a specimen table cover arranged around the specimen table, and first and second heat transfer gas supply units. The first heat transfer gas supply unit has a main path for supplying a heat transfer gas to the specimen holding surface for cooling the specimen, and the second heat transfer gas supply unit has a branch path branched from the main path of the first heat transfer gas supply unit for supplying a part of the heat transfer gas to a gap between an outer portion of the specimen holding surface and the specimen table cover.

Abstract: In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.

Abstract: A plasma processing apparatus for processing a sample within a vacuum vessel, including: a plurality of sensors for detecting plural kinds of information relating to a processing state of the sample as monitor data; data selecting means for selecting a detection time range of the monitor data thus detected which is used for monitoring the plasma processing apparatus; a signal filter for converting the monitor data within the selected detection time range into an effective signal; a model expression unit for generating a predicted value of a patterned physical-shape of a sample based on the effective signal; and a display screen for displaying the patterned physical-shape predicted value; wherein the display screen displays the patterned physical-shape predicted value without measuring a patterned shape after processing of the sample.

Abstract: A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.

Abstract: In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.

Abstract: A plasma treatment method of etching a substrate to be processed by using a gas plasma in a treatment chamber. The method includes exhausting reaction products obtained by etching and released into a vapor phase as a gas from the treatment chamber, wherein the reaction products on an outer periphery of the substrate are more efficiently exhausted and setting a deposition probability of the reaction products in a central part of a plane of the substrate to be low and setting a deposition probability of the reaction products in a peripheral part of a plane of the substrate to be high. The setting of the deposition probability is effected by setting a temperature in the central part of the substrate higher than a temperature in the peripheral part of the substrate.

Abstract: A sample processing method for processing a sample by introducing a gas into a vacuum vessel and generating plasma in the vacuum vessel. The sample processing method includes the steps of measuring an intensity of light emitted from a light-emitting diode in the vacuum vessel, at the outside of the vacuum vessel, and monitoring a status of the plasma in accordance with the measured intensity of the light.

Abstract: A method and apparatus for measuring a potential difference for plasma processing with a plasma processing apparatus that processes a sample by introducing a gas into a vacuum chamber and generates plasma. A light-emitting portion is formed on a measurement-use sample of the sample to be processed and a current flows into the light-emitting portion according to a potential difference that has been generated across the light-emitting portion. An intensity of light emitted from the light-emitting portion according to a predetermined light intensity is measured and a potential difference on the measurement-use sample according to a predetermined light intensity is measured.

Abstract: A plasma processing apparatus includes a vacuum processing chamber, a plasma generating unit having a first power source, a gas supply unit, a lower electrode having a sample table surface for holding a sample in the vacuum processing chamber, and a vacuum pumping unit. The apparatus further includes a plate disposed at a position opposed to the sample table surface, a disc electricity conductor disposed in contact with the plate, a second power source for applying an RF frequency bias power to the disc electricity conductor, and a unit for controlling a temperature of the plate to a predetermined value. The plate is made of silicon or carbon at high purity, and the disc electricity conductor and the plate have a plurality of holes for introducing processing gas from the gas supply unit into the vacuum processing chamber.

Abstract: A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.

Abstract: A method and system of holding a substrate to decrease foreign substances on the back surface thereof. The substrate holding system includes a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface thereof to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.

Abstract: A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.

Abstract: A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.

Abstract: A plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable, arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature monitoring unit monitors temperature of the inner cylinder, and a controller controls temperature of the outer cylinder. A desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder, and the controller controls the temperature of the outer cylinder in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.

Abstract: A plasma etching method of a wafer includes the steps of electrostatically attracting the wafer which has a gate oxide film onto a wafer mounting electrode in a vacuum processing chamber, introducing a mixed gas into the vacuum processing chamber on the basis of an etching recipe, generating a magnetic field inside the vacuum processing chamber, generating a plasma in the vacuum processing chamber, applying a bias power to the wafer to accelerate ions in the plasma toward the wafer, and setting an impedance of a portion of the wafer mounting electrode which corresponds to an outer periphery of the wafer as viewed from a bias power supply to a value which is greater than that of a center portion of the wafer mounting electrode using an electrode arranged within the wafer mounting electrode at a position corresponding to the outer periphery of the wafer and formed under an insulating film for electrostatically attracting the wafer.

Abstract: A plasma processing method utilizing a plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature of the inner cylinder is monitored, and a desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder. A temperature of the outer cylinder is controlled in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.